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.3 W Small Signal Bipolar Junction Transistors (BJT) 110

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PUMH9-QF by Nexperia

PUMH9-QF

Nexperia

PUMH9-QF by Nexperia is a NPN BJT transistor with 2 elements and built-in resistor for switching applications. It features a max VCEsat of 0.1V, hFE of 100, and can handle a max collector-emitter voltage of 50V. This small outline transistor operates b/w -55 to 150 °C and has a nominal transition frequency of 230 MHz.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMH9-QZ by Nexperia

PUMH9-QZ

Nexperia

Nexperia's PUMH9-QZ is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.1V, hFE of 100, and fT of 230MHz. With max ratings at 50V/0.1A, it operates from -55 to 150°C in small outline package for automotive (AEC-Q101) and general use (IEC-60134).

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMB11-QX by Nexperia

PUMB11-QX

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

3 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

180 MHz

.1 V

PUMH10-QX by Nexperia

PUMH10-QX

Nexperia

The Nexperia PUMH10-QX is a NPN BJT with 2 elements, built-in resistor for switching applications. It has VCEsat of 0.1V, hFE of 100, and operates up to 150°C. With a max fT of 230MHz, it's ideal for AEC-Q101 automotive standards in small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

BC846BS-QF by Nexperia

BC846BS-QF

Nexperia

BC846BS-QF by Nexperia is a NPN BJT for switching applications. Features include VCEsat of 0.3V, hFE of 200, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for compact designs requiring high-speed switching capabilities.

.1 A

1.9 pF

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QZ by Nexperia

BC846S-QZ

Nexperia

BC846S-QZ by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 110, and IC of 0.1A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QX by Nexperia

BC846S-QX

Nexperia

BC846S-QX by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz making it ideal for small outline packages in automotive electronics.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QF by Nexperia

BC846S-QF

Nexperia

BC846S-QF by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 110, and fT of 100MHz. With max ratings of 65V VCEO and 0.1A IC, it operates b/w -65 to 150°C.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846S-QH by Nexperia

BC846S-QH

Nexperia

BC846S-QH by Nexperia is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.3V, min hFE of 110, and max IC of 0.1A. With a package style of small outline and dual terminal position, it operates b/w -65 to 150°C and has a fT of 100MHz.

.1 A

1.5 pF

65 V

SINGLE

110

R-PDSO-G6

1

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

PUMD10-QH by Nexperia

PUMD10-QH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD10-QF by Nexperia

PUMD10-QF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QZ by Nexperia

PUMD48-QZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QH by Nexperia

PUMD48-QH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD48-QX by Nexperia

PUMD48-QX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V