Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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RN1510(TE85L,F)
Toshiba
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;
.1 A
120
2
NPN
.3 W
BIP General Purpose Small Signal
YES
SILICON
RN1601(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;
30
RN1606(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; Minimum DC Current Gain (hFE): 80;
80
260
RN1610(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;
RN2506(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; No. of Elements: 2;
PNP
RN2511(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;
RN2607(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;
RN2608(TE85L,F)
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;
RN4609(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 70;
70
NPN AND PNP
RN4611(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 120;
RN46A1(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 50;
50
RN4602(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;
BIP General Purpose Small Signals
RN1508(TE85L,F)
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;
1
RN4610(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; No. of Elements: 2;
HN1B04F(TE85L,F)
NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel; Minimum DC Current Gain (hFE): 70;
.5 A
150 Cel
SMMBT2369LT1G
Onsemi
SMMBT2369LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.3W and can handle a max collector-emitter voltage of 15V. With a small outline package style, it operates at up to 150°C and has a min DC current gain of 20 (hFE).
.2 A
15 V
SINGLE
20
TO-236AB
R-PDSO-G3
e3
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
AEC-Q101
Other Transistors
Matte Tin (Sn) - annealed
GULL WING
DUAL
SWITCHING
18 ns
12 ns
SMMBTA14LT3G
SMMBTA14LT3G by Onsemi is a NPN BJT transistor with max power dissipation of 0.3W, hFE of 5000, and fT of 125MHz. Ideal for applications requiring high DC current gain and fast transition frequency in surface mount configurations.
.3 A
5000
MATTE TIN
125 MHz
DTA123TET1G
DTA123TET1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 160. It is designed for switching applications, features a built-in resistor, and comes in a small outline package suitable for surface mount technology.
50 V
SINGLE WITH BUILT-IN RESISTOR
160
DTA144TET1G
DTA144TET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This surface-mount device comes in a small outline package with Gull Wing terminals.
BUILT IN BIAS RESISTOR
MMBT3906-TP-HF
Micro Commercial Components
MMBT3906-TP-HF by Micro Commercial Components is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. With a max power dissipation of 0.3W and max collector-emitter voltage of 40V, it operates b/w -55 to 150°C. This surface-mount transistor has a transition frequency of 250MHz and turn-on time of 70ns, making it ideal for small outline packages in electronic circuits.
40 V
-55 Cel
10
AMPLIFIER
250 MHz
305 ns
70 ns
RN2502
PNP; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BUILT-IN RESISTOR RATIO IS 1
6 pF
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
Not Qualified
200 MHz
.3 V
IMD3AT108
ROHM
ROHM's IMD3AT108 is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor for switching applications. With max VCEsat of 0.3V, it operates up to 150°C, has fT of 250MHz, and can handle IC of 0.05A in a small outline package suitable for surface mount technology.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
.05 A
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G6
e1
6
TIN SILVER COPPER
IMX2T108
ROHM's IMX2T108 is a NPN BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and Pdiss of 0.3W, it's suitable for small outline packages in surface mount designs.
.15 A
SEPARATE, 2 ELEMENTS
180 MHz
.4 V
IMX3T108
ROHM's IMX3T108 is a NPN BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and IC of 0.15A, it's suitable for small outline packages in surface mount configurations.
2SC1741ASTPQ
ROHM 2SC1741ASTPQ is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 120, and fT of 250MHz. Ideal for switching applications due to its max. collector-emitter voltage of 50V and max. collector current of 0.5A in a through-hole package style.
R-PSIP-T3
IN-LINE
NO
THROUGH-HOLE
IMZ4T108
ROHM's IMZ4T108 is a Small Signal BJT with NPN and PNP types, 2 separate elements, and Gull Wing terminals. It has a max power dissipation of 0.3W, hFE of 120, and can handle up to 32V collector-emitter voltage. Ideal for applications requiring high transition frequency (fT) of 250MHz in small outline packages.
32 V
DTC114ESATP
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 1
DTC143TSATP
ROHM DTC143TSATP is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications with max operating temp of 150°C. Package style: IN-LINE, terminal form: THROUGH-HOLE, and terminal finish: TIN SILVER COPPER.
BUILT-IN BIAS RESISTOR
100
2SD2144STPW
ROHM 2SD2144STPW is a NPN BJT transistor with max. power dissipation of 0.3W and min. DC current gain of 1200, ideal for low-power applications. With a max. collector-emitter voltage of 20V and max. collector current of 0.5A, it operates up to 150°C making it suitable for various electronic circuits requiring high frequency operation up to 350MHz in an in-line package style.
20 V
1200
350 MHz
PMEM1505PG,115
NXP Semiconductors
PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
SINGLE WITH BUILT-IN DIODE
90
280 MHz
DMB2227A-7
Diodes Incorporated
DMB2227A-7 by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max operating temp of 150°C, it offers a transition frequency of 300 MHz and can handle up to 0.6A collector current.
.6 A
40
300 MHz
285 ns
35 ns
IMT17-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
EMF21-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
R-PDSO-F6
FLAT
MMS8550-H-TP
MMS8550-H-TP by Micro Commercial Components is a PNP BJT with 3 terminals, hFE of 200, and max. power dissipation of 0.3W. Ideal for small outline applications requiring a max. collector-emitter voltage of 25V, operating temp up to 150°C, and transition frequency of 150MHz.
25 V
200
150 MHz
DCX115EK-7-F
DCX115EK-7-F by Diodes Inc. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and built-in resistor. It has 6 terminals, max power dissipation of 0.3W, and operates up to 150°C. Ideal for applications requiring high transition frequency at 250MHz in a compact small outline package.
BUILT IN BIAS RESISTANCE RATIO IS 1
82
DNLS160-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): 1 A;
HIGH RELIABILITY
1 A
60 V
270 MHz
DNLS160V-7
PBSS5140V,115
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): 1 A;
TIN
BC859BLT1
BC859BLT1 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 0.3W, and hFE of 220. Ideal for small outline applications, it operates at up to 150 °C with a max collector-emitter voltage of 30V.
30 V
220
e0
235
Tin/Lead (Sn/Pb)
100 MHz
DTA115EET1
DTA115EET1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor comes in a small outline package with gull wing terminals.
BUILT-IN BIAS RESISTOR RATIO IS 1
TIN LEAD
DTC115EET1
DTC115EET1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. This surface-mount device comes in a small outline package with Gull Wing terminals, making it suitable for compact electronic designs.
DTC144WET1
DTC144WET1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline transistor in gull wing package is ideal for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
2SA1038STPR
ROHM 2SA1038STPR is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 180, suitable for amplifier applications due to its high transition frequency of 140MHz and power dissipation of 0.3W.
120 V
180
140 MHz
2SA1038STPS
ROHM 2SA1038STPS is a PNP BJT transistor with max. collector-emitter voltage of 120V and max. collector current of 0.05A. It has a min. DC current gain of 270, suitable for amplifier applications with a nominal transition frequency of 140MHz.
270
MMBT2222A-7
Diodes Inc.'s MMBT2222A-7 is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. With Gull Wing terminals in a small outline package, it offers fast turn-on/off times of 35ns/285ns.
MMBT3906-7
Diodes Inc. MMBT3906-7 is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for switching applications, it has a min. DC current gain of 30 and operates b/w -55 to 150°C efficiently in a small outline package shape for surface mount assembly.
300 ns
MMBTA13-7
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .3 A;
DARLINGTON
10000
MMBTA14-7
20000
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