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DMB2227A-7

Diodes Incorporated

DMB2227A-7 by Diodes Incorporated

DMB2227A-7 by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max operating temp of 150°C, it offers a transition frequency of 300 MHz and can handle up to 0.6A collector current.

Median Price

$0.085

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 45,000 parts In-Stock

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$0.085

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$0.085

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Chip Stock

USA . 69,000 parts In-Stock

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69,000

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Vyrian

USA . 10,930 parts In-Stock

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10,930

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NAC Semi

USA . 3,000 parts In-Stock

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$0.119

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$0.119

Nova Conductors

Japan . 100 parts In-Stock

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100

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Ampacity Inc.

Singapore . 16,329 parts In-Stock

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$0.072

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16,329

$0.072

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Semicontronic

India . 16,212 parts In-Stock

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$0.157

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$0.153

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$0.152

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$0.152

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Corohmni

South Africa . 261 parts In-Stock

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$0.160

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261

$0.160

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Continental Prestige Electronics

USA . 2,950 parts In-Stock

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$0.408

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$0.198

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$0.110

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$0.088

2,950

$0.408

$0.198

$0.110

$0.088

AZTECH Wire

Italy . 653 parts In-Stock

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$13.670

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653

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QUARKTWIN TECHNOLOGY LTD

USA . 19,169 parts In-Stock

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Metaverse IC Inc.

Canada . 9,000 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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Lixinc

USA . 6,413 parts In-Stock

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Argo Parts USA

USA . 4,753 parts In-Stock

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iodParts Technologies Inc.

India . 3,030 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.110

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Upgrade your electronic projects with the DMB2227A-7 by Diodes Incorporated. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers superior performance in switching applications. With NPN and PNP configurations, this transistor provides reliable functionality in a compact rectangular package. Experience seamless integration with its surface mount capability and Gull Wing terminals for easy installation. Trust Diodes Incorporated for quality components that deliver exceptional results. Elevate your designs with the DMB2227A-7 and unlock endless possibilities in your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

With both NPN and PNP types available, this transistor can be used in a wide range of circuit configurations.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly transition between full on and full off states, making it ideal for digital circuits.

Surface Mount: YES

Being surface mountable makes the transistor easy to install on PCBs, saving space and simplifying manufacturing processes.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum voltage rating, this transistor can withstand higher voltages without damage, increasing the reliability of the circuit.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency allows the transistor to operate at high frequencies, making it suitable for applications that require fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DMB2227A-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

DMB2227A-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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