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FMB2227A

Onsemi

FMB2227A by Onsemi

FMB2227A by Onsemi is a Small Signal BJT with NPN and PNP channels. It has 2 separate elements, 6 terminals, and operates up to 150°C. With a max voltage of 30V and current of 0.5A, it's ideal for switching applications requiring a transition frequency of 250MHz.

Median Price

$0.196

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 249 parts In-Stock

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$0.582

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$0.117

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249

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$0.117

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Verical

USA . 36,000 parts In-Stock

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$0.110

36,000

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$0.110

Newark

USA . 18,000 parts In-Stock

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$0.248

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18,000

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$0.248

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Farnell

UK . 900 parts In-Stock

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$0.187

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$0.120

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$0.105

900

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$0.187

$0.120

$0.105

Chip1Stop

Japan . 250 parts In-Stock

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$0.196

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$0.117

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250

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$0.196

$0.117

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Element14

Singapore . 79 parts In-Stock

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$0.356

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$0.226

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$0.185

79

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$0.185

Rochester

USA . 46 parts In-Stock

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$0.148

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$0.123

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$0.110

46

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$0.148

$0.123

$0.110

Distributors (In-Stock)

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Digiode

USA . 2,734 parts In-Stock

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$0.115

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$0.115

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Nova Conductors

Japan . 700 parts In-Stock

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$0.200

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$0.200

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Flip Electronics

USA . 33,000 parts In-Stock

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Chip Stock

USA . 24,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 22,178 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.175

6,000

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$0.175

IBS Electronics

USA . 3,000 parts In-Stock

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$0.146

3,000

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$0.146

Speed Components Ltd

Israel . 806 parts In-Stock

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806

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Elcom Components

USA . 534 parts In-Stock

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534

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Vyrian

USA . 459 parts In-Stock

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ComSIT Distribution GmbH

Germany . 228 parts In-Stock

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Inventory MP

USA . 34 parts In-Stock

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34

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Bristol Electronics

USA . 34 parts In-Stock

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34

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,905 parts In-Stock

1+ parts

$0.099

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1,905

$0.099

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Semicontronic

India . 1,795 parts In-Stock

1+ parts

$0.099

100+ parts

$0.097

1k+ parts

$0.096

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1,795

$0.099

$0.097

$0.096

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Corphita

USA . 1,663 parts In-Stock

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$0.109

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$0.109

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Corohmni

South Africa . 475 parts In-Stock

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$0.121

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475

$0.121

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Modulus Dynamics

Lithuania . 90 parts In-Stock

1+ parts

$0.182

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$0.181

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$0.175

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90

$0.182

$0.181

$0.175

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Argo Parts USA

USA . 1,508 parts In-Stock

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$0.200

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$0.194

1,508

$0.200

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$0.194

Aztec Data Supply Inc.

USA . 4,037 parts In-Stock

1+ parts

$0.855

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4,037

$0.855

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RC Electronics

USA . 30,000 parts In-Stock

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$0.170

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$0.160

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$0.160

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$0.170

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$0.160

ChipstoGo Electronic ltd

UK . 24,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,977 parts In-Stock

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Perfect Parts

USA . 17,796 parts In-Stock

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Lixinc

USA . 17,341 parts In-Stock

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TANS Electronics

Latvia . 7,778 parts In-Stock

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Problanco Electronics

Mexico . 7,275 parts In-Stock

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SupplyDigital Components

Austria . 6,154 parts In-Stock

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6,154

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A-Z Elektronik GmbH

Germany . 4,662 parts In-Stock

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Kulean Microsystems

USA . 4,618 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,108 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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iodParts Technologies Inc.

India . 2,860 parts In-Stock

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2,860

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Netroflash

USA . 2,000 parts In-Stock

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$0.196

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$0.190

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$0.186

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$0.196

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$0.186

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,520 parts In-Stock

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$0.238

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$0.117

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Supply Digital

USA . 1,045 parts In-Stock

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Robosynatics

Brazil . 943 parts In-Stock

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$0.157

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$0.154

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$0.154

943

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$0.157

$0.154

$0.154

Lucentia Tech

USA . 943 parts In-Stock

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$0.157

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$0.154

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$0.154

943

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$0.157

$0.154

$0.154

UHIMA Technologies

Türkiye . 921 parts In-Stock

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921

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Overview

Unleash the power of innovation with the FMB2227A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unparalleled quality and reliability in its Small Signal Bipolar Junction Transistors. Ideal for switching applications, this NPN and PNP transistor offers seamless performance in a compact package. With a high DC current gain and maximum operating temperature of 150°C, the FMB2227A provides exceptional value and efficiency to customers looking for cutting-edge solutions. Elevate your projects with Onsemi's FMB2227A and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Offers flexibility for different circuit designs and requirements, allowing for versatile use.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control and operation of each element, enhancing efficiency in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in high-speed operations.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Fits well in compact designs and allows for efficient placement on circuit boards.

Terminal Form: GULL WING

Provides secure connections and allows for easy soldering, ensuring reliable performance in various environments.

No. of Elements: 2

Offers dual functionality and enhances the capabilities of the transistor for a wider range of applications.

No. of Terminals: 6

Provides multiple points for connection, offering versatility and flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Compact design makes it suitable for small electronic devices and space-constrained applications.

Minimum DC Current Gain (hFE): 75

Provides consistent and reliable amplification of current, ensuring stable performance in various circuits.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for applications where heat dissipation is important.

Maximum Collector-Emitter Voltage: 30 V

Handles high voltage levels, ensuring safe and reliable operation in a variety of circuits.

Transistor Element Material: SILICON

Offers high performance and durability, making it a reliable choice for long-lasting applications.

Maximum Collector Current (IC): 0.5 A

Can handle high currents, making it suitable for applications that require a significant amount of power.

Terminal Finish: TIN

Provides a reliable connection and prevents corrosion, ensuring long-term performance and durability.

Terminal Position: DUAL

Allows for versatile installation options and flexible connections in different circuit designs.

Moisture Sensitivity Level (MSL): 1

Resistant to moisture damage, making it suitable for use in humid or damp environments.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering and assembly processes, maintaining the integrity of the transistor during manufacturing.

Peak Reflow Temperature °C: 260

Withstands high temperatures during manufacturing processes, ensuring durability and reliability in operation.

Nominal Transition Frequency (fT): 250 MHz

Offers high-speed performance, making it suitable for applications that require fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FMB2227A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FMB2227A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-580-9270, 5961015809270

NIIN

015809270

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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