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FMB200

Onsemi

FMB200 by Onsemi

FMB200 by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.5A, and transition frequency of 300MHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

Median Price

$0.212

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100,960 parts In-Stock

1+ parts

-

100+ parts

$0.212

1k+ parts

$0.176

10k+ parts

$0.157

100,960

-

$0.212

$0.176

$0.157

DigiKey

USA . 100,960 parts In-Stock

1+ parts

-

100+ parts

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$0.260

100,960

-

-

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$0.260

Verical

USA . 100,960 parts In-Stock

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100+ parts

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$0.196

100,960

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$0.196

Distributors (In-Stock)

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Digiode

USA . 1,989 parts In-Stock

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$0.164

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1,989

$0.164

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Vyrian

USA . 2,302 parts In-Stock

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$0.173

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2,302

$0.173

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Chip Stock

USA . 69,000 parts In-Stock

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69,000

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LIBRA Elektronik GmbH

Germany . 639 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,611 parts In-Stock

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$0.156

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$0.156

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Corohmni

South Africa . 110 parts In-Stock

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$0.173

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110

$0.173

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Kepictronics

USA . 306,000 parts In-Stock

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306,000

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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TANS Electronics

Latvia . 5,093 parts In-Stock

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SupplyDigital Components

Austria . 4,338 parts In-Stock

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4,338

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Problanco Electronics

Mexico . 3,205 parts In-Stock

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Supply Digital

USA . 2,544 parts In-Stock

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2,544

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Northwest PG Solutions

USA . 2,370 parts In-Stock

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$4.453

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2,370

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$4.453

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Kulean Microsystems

USA . 1,121 parts In-Stock

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Native Components

USA . 684 parts In-Stock

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$4.408

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684

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$4.408

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Perfect Parts

USA . 148 parts In-Stock

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148

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UHIMA Technologies

Türkiye . 60 parts In-Stock

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60

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Overview

Unlock the power of innovation with the FMB200 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that deliver exceptional performance. The FMB200 falls under the category of Small Signal Bipolar Junction Transistors (BJT) and is perfect for amplifier applications. With its PNP polarity, dual-element configuration, and high DC current gain, this transistor offers unparalleled value and benefits to customers. Experience reliable operation and superior functionality with the FMB200 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration in circuits where PNP transistors are required.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration with 2 elements provides versatility in circuit design and allows for customization as needed.

Transistor Application: AMPLIFIER

Designed for amplifier applications, ensuring reliable and efficient performance in amplifying signals.

Surface Mount: YES

The surface mount capability makes the transistor easy to install and suitable for compact circuit designs.

Package Shape: RECTANGULAR

The rectangular shape helps in efficient space utilization on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections on the circuit board.

Maximum Power Dissipation (Abs): 0.7 W

With a high maximum power dissipation, this transistor can handle power efficiently without overheating.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain ensures stable and consistent amplification of signals in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate reliably in a wide range of environments.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage rating provides added protection against voltage spikes in the circuit.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current rating of 0.5 A, this transistor can handle moderate current flow efficiently.

Terminal Finish: Tin (Sn)

The tin terminal finish ensures reliable soldering connections on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering of the transistor during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency enables the transistor to switch rapidly and handle high-frequency signals efficiently.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FMB200 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FMB200 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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