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FMB2222A

Onsemi

FMB2222A by Onsemi

FMB2222A by Onsemi is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a max collector-emitter voltage of 40V, max current of 0.5A, and transition frequency of 300MHz. The package is small outline with gull wing terminals, suitable for surface mount assembly.

Median Price

$0.208

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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DigiKey

USA . 26,739 parts In-Stock

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$0.740

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$0.292

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$0.199

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26,739

$0.740

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$0.199

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Mouser Electronics

USA . 4,136 parts In-Stock

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$0.740

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$0.293

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$0.222

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$0.740

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Newark

USA . 1,422 parts In-Stock

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$0.762

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$0.301

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$0.205

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1,422

$0.762

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Avnet

USA . 1,530,000 parts In-Stock

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Arrow

USA . 252,000 parts In-Stock

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$0.142

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Verical

USA . 252,000 parts In-Stock

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.108

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Farnell

UK . 2,870 parts In-Stock

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$0.208

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$0.144

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$0.114

2,870

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$0.114

Rochester

USA . 2,545 parts In-Stock

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$0.163

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$0.136

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$0.121

2,545

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$0.121

Element14

Singapore . 219 parts In-Stock

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$0.352

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219

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Digiode

USA . 1,194 parts In-Stock

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Nova Conductors

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Chip Stock

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Vyrian

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IBS Electronics

USA . 6,000 parts In-Stock

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$0.127

NAC Semi

USA . 6,000 parts In-Stock

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$0.471

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Bristol Electronics

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NexGen Digital

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Inventory MP

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2,958

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North Shore Components

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Velocity Electronics

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LIBRA Elektronik GmbH

Germany . 2,107 parts In-Stock

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Flip Electronics

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PC Components Company LLC

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Dark Horse Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 14,432 parts In-Stock

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$0.091

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Semicontronic

India . 14,236 parts In-Stock

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$0.088

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Corphita

USA . 1,994 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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Component Stockers USA

USA . 38,292 parts In-Stock

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Continental Prestige Electronics

USA . 1,890 parts In-Stock

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$0.464

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$0.224

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$0.107

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Perfect Parts

USA . 227,360 parts In-Stock

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RC Electronics

USA . 79,575 parts In-Stock

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Lixinc

USA . 17,323 parts In-Stock

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Robosynatics

Brazil . 9,146 parts In-Stock

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Lucentia Tech

USA . 9,146 parts In-Stock

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Kepictronics

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Problanco Electronics

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TANS Electronics

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Argo Parts USA

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Supply Digital

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SupplyDigital Components

Austria . 573 parts In-Stock

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UHIMA Technologies

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Kulean Microsystems

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Overview

Enhance your electronic projects with the FMB2222A Small Signal Bipolar Junction Transistor by Onsemi. With a reputation for excellence, Onsemi delivers high-quality components that guarantee superior performance and reliability. Ideal for switching applications, this NPN transistor features separate elements in a compact, surface-mount package, making it versatile for various design needs. Experience seamless integration and efficient operation with the FMB2222A, offering a maximum collector-emitter voltage of 40V and a nominal transition frequency of 300MHz. Upgrade your designs today with Onsemi's FMB2222A transistor, providing exceptional value and benefits to customers seeking top-tier electronic components.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type:

NPN - NPN transistors are commonly used for amplification and switching applications due to their versatility and reliability.

Configuration:

SEPARATE, 2 ELEMENTS - Having separate elements allows for flexibility in circuit design and enables more precise control over the transistor's operation.

Transistor Application:

SWITCHING - Designed specifically for switching applications, this transistor offers fast turn-on and turn-off times for efficient operation.

Surface Mount:

YES - This surface mount transistor is easy to install and saves space on a circuit board, making it ideal for compact electronic devices.

Package Shape:

RECTANGULAR - The rectangular shape of the package provides a stable and secure mounting option for easy integration into electronic systems.

Terminal Form:

GULL WING - The gull wing terminal form simplifies the soldering process and ensures a strong, reliable connection for optimal performance.

No. of Elements:

2 - With two elements, this transistor can handle more complex circuit configurations and offer enhanced functionality.

No. of Terminals:

6 - The six terminals provide multiple connection points for increased versatility and compatibility with different circuit designs.

Maximum Power Dissipation (Abs):

0.7 W - This high power dissipation rating allows the transistor to handle heavy loads without overheating, ensuring long-term reliability.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and facilitates efficient heat dissipation, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE):

75 - The high DC current gain ensures stable and consistent transistor performance in a wide range of operating conditions.

Maximum Operating Temperature:

150 °C - With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage:

40 V - This high voltage rating enables the transistor to control higher voltage loads with ease, expanding its range of applications.

Transistor Element Material:

SILICON - Silicon transistors offer excellent performance characteristics, such as high gain and low power consumption, making them a reliable choice for various applications.

Maximum Turn On Time (ton):

28 ns - The fast turn-on time ensures rapid response in switching applications, improving overall circuit efficiency.

Maximum Collector Current (IC):

0.5 A - With a high collector current rating, this transistor can handle heavy loads without overheating, providing reliable performance in demanding applications.

Maximum Turn Off Time (toff):

220 ns - The fast turn-off time enables quick switching transitions, reducing switching losses and improving efficiency.

Terminal Finish:

MATTE TIN - The matte tin terminal finish ensures a strong and reliable solder joint, reducing the risk of connection failures in high-stress environments.

Terminal Position:

DUAL - The dual terminal position provides flexibility in circuit layout and enables efficient heat dissipation for improved reliability.

Maximum Time At Peak Reflow Temperature (s):

30 - This specification ensures that the transistor can withstand peak reflow temperatures for a specific duration, preventing damage during soldering processes.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature tolerance allows for reliable solder joint formation, ensuring the longevity of the transistor in harsh operating conditions.

Nominal Transition Frequency (fT):

300 MHz - The high nominal transition frequency enables this transistor to operate at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FMB2222A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

220 ns

Maximum Turn On Time (ton):

28 ns

Trade Compliance

FMB2222A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-576-2700, 5961015762700

NIIN

015762700

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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