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IMD3AT108

ROHM

IMD3AT108 by ROHM

ROHM's IMD3AT108 is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor for switching applications. With max VCEsat of 0.3V, it operates up to 150°C, has fT of 250MHz, and can handle IC of 0.05A in a small outline package suitable for surface mount technology.

Median Price

$0.334

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$0.550

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$0.095

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Chip1Stop

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Overview

Discover the IMD3AT108 by ROHM, a high-quality small signal bipolar junction transistor designed for switching applications. With separate NPN and PNP elements and a built-in resistor, this component offers exceptional performance and reliability. Its compact rectangular package shape and gull wing terminal form make it ideal for surface mount applications. Delivering a maximum VCEsat of only 0.3V, this transistor provides efficient power dissipation and operates at temperatures up to 150°C. Trust in ROHM's expertise in semiconductor manufacturing to bring you a versatile and dependable solution for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN AND PNP

Offers versatility in circuit design by supporting both NPN and PNP configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Simplifies circuit layout with built-in resistors and separate elements.

Transistor Application: SWITCHING

Ideal for switching applications with fast response times.

Surface Mount: YES

Suitable for automated assembly processes and compact circuit designs.

Maximum VCEsat: 0.3 V

Ensures low saturation voltage for efficient operation.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting in circuit boards.

Terminal Form: GULL WING

Provides secure and reliable connections in surface mount applications.

No. of Elements: 2

Consists of two elements for added functionality and flexibility in circuits.

No. of Terminals: 6

Offers multiple connection points for different circuit configurations.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power dissipation levels for reliable performance.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space on PCBs.

Minimum DC Current Gain (hFE): 30

Provides consistent and predictable current gain in circuits.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures for demanding applications.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Offers reliable performance and durability.

Maximum Collector Current (IC): 0.05 A

Can handle moderate current levels for various applications.

Terminal Finish: TIN SILVER COPPER

Provides corrosion resistance and good electrical conductivity.

Terminal Position: DUAL

Allows for flexible mounting options in circuits.

Maximum Time At Peak Reflow Temperature (s): 10

Ensures reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

Ideal temperature for soldering surface mount components.

Nominal Transition Frequency (fT): 250 MHz

Enables high-frequency performance in signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) IMD3AT108 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

IMD3AT108 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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