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IMX2T108

ROHM

IMX2T108 by ROHM

ROHM's IMX2T108 is a NPN BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and Pdiss of 0.3W, it's suitable for small outline packages in surface mount designs.

Median Price

$0.060

Lifecycle Status

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Chip1Stop

Japan . 503 parts In-Stock

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Verical

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NAC Semi

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Kruse Electronics AG

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Bristol Electronics

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PC Components Company LLC

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Lantek

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Overview

Upgrade your amplifier circuits with the IMX2T108 by ROHM, a high-quality NPN small signal bipolar junction transistor. With its separate configuration and dual elements, this transistor offers superior performance and reliability for a wide range of applications. Designed with a maximum VCEsat of only 0.4V and a minimum DC current gain of 120, the IMX2T108 provides exceptional value and efficiency to customers. Trust in ROHM's reputation for excellence and choose the IMX2T108 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a cost-effective and durable housing for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, offering reliable performance.

Configuration: SEPARATE, 2 ELEMENTS

Allows for easy integration into circuits requiring separate elements.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Surface Mount: YES

Enables efficient mounting on circuit boards, saving space and simplifying assembly.

Maximum VCEsat: 0.4 V

Low saturation voltage minimizes power loss and improves efficiency.

Package Shape: RECTANGULAR

Easily fits into compact electronic devices.

Terminal Form: GULL WING

Facilitates secure and reliable connections during assembly.

Maximum Power Dissipation (Abs): 0.3 W

Able to handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 120

Consistent and high gain characteristics for accurate amplification.

Maximum Operating Temperature: 150 °C

Can operate reliably at elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

Adequate voltage rating for various circuit requirements.

Transistor Element Material: SILICON

Offers high reliability and performance in electronic circuits.

Maximum Collector Current (IC): 0.15 A

Suitable for low to moderate current applications.

Terminal Finish: TIN SILVER COPPER

Ensures good conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Provides multiple connection points for flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 10

Designed to withstand peak reflow temperatures during assembly processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures for superior soldering.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency enables fast switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) IMX2T108 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

IMX2T108 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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