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IMX3T108

ROHM

IMX3T108 by ROHM

ROHM's IMX3T108 is a NPN BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and IC of 0.15A, it's suitable for small outline packages in surface mount configurations.

Median Price

$0.145

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Overview

Discover the power of innovation with ROHM's IMX3T108 Small Signal Bipolar Junction Transistor. This high-quality NPN transistor boasts a maximum VCEsat of just 0.4V, making it ideal for amplifier applications. With its compact design and advanced technology, this transistor offers customers unmatched performance and efficiency. Trust in ROHM's reputation for excellence and elevate your projects to new heights with the IMX3T108.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN configuration allows for easy current flow and amplification of signals in the transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Maximum VCEsat: 0.4 V

Lower VCEsat ensures efficient operation and minimal power loss in the transistor.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels effectively.

Minimum DC Current Gain (hFE): 120

High DC current gain of 120 ensures reliable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can operate effectively at temperatures up to 150°C, suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltages efficiently.

Maximum Collector Current (IC): 0.15 A

Capable of handling collector currents up to 0.15A, suitable for many small signal applications.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency of 180MHz ensures fast signal switching and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) IMX3T108 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

IMX3T108 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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