Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPS2907ARL1G
Onsemi
MPS2907ARL1G by Onsemi is a PNP BJT with max. power dissipation of 0.36W, hFE of 100, and max. operating temp of 150 °C. Ideal for applications requiring a small signal transistor with a collector-emitter voltage of 60V, such as amplifiers or switching circuits due to its high transition frequency of 200MHz.
.6 A
60 V
SINGLE
100
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
PNP
.36 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
SILICON
200 MHz
100 ns
45 ns
MPS2907ARLREG
MPS2907ARLREG by Onsemi is a PNP BJT with hFE of 100, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring fast switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: tin silver copper, and max operating temp: 150 °C make it versatile for various designs.
MMBT2222AK
Fairchild Semiconductor
MMBT2222AK by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.35W, and max. collector-emitter voltage of 40V. It is used in small outline packages for applications requiring a DC current gain (hFE) of at least 40, operating temperatures up to 150°C, and a transition frequency (fT) of 300MHz.
40 V
40
R-PDSO-G3
e3
RECTANGULAR
SMALL OUTLINE
NPN
.35 W
YES
MATTE TIN
GULL WING
DUAL
300 MHz
285 ns
35 ns
2N5401G
The Onsemi 2N5401G is a PNP BJT transistor with max. collector-emitter voltage of 150V, max. collector current of 0.6A, and min. DC current gain of 50. It is commonly used in amplifier applications due to its high transition frequency of 100MHz and max. power dissipation of 0.63W for efficient signal amplification.
150 V
50
.63 W
Tin/Silver/Copper (Sn/Ag/Cu)
AMPLIFIER
100 MHz
2N4401G
2N4401G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
SWITCHING
250 MHz
255 ns
2N4403RLRMG
2N4403RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
1.5 W
2N4401RLRMG
2N4401RLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
2N4403RLG
2N4403RLG by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 100, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 200MHz).
EUROPEAN PART NUMBER
2N5401RL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .63 W; Maximum Collector Current (IC): .6 A;
2N5401RLRMG
2N5401ZL1G
2N5401ZL1G by Onsemi is a PNP BJT with max. collector-emitter voltage of 150V, max. collector current of 0.6A, and min. DC current gain of 50. It is used in amplifier applications due to its high transition frequency of 100MHz and max power dissipation of 0.63W.
2N5550G
2N5550G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 20, and max. collector-emitter voltage of 140V. It is commonly used in amplifier applications due to its single configuration and cylindrical package style.
140 V
20
2N5551RLRAG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
160 V
30
2N5551RLRMG
2N5551RLRMG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 160V, max. collector current of 0.6A, and min. DC current gain of 30. It is used in amplifier applications due to its cylindrical package style and silicon element material for high performance at up to 150 °C operating temperature.
MMBT2222LT3G
MMBT2222LT3G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 30V, max collector current of 0.6A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260 °C, it operates at up to 150°C and has a transition frequency of 250MHz.
30 V
75
TO-236
.225 W
TIN
MPS2222ARLRMG
MPS2222ARLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 35, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 285ns) and high transition frequency (fT: 300MHz).
35
.625 W
MPS2222AZL1G
MPS2222AZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 35, and max. operating temp of 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and transition frequency of 300MHz in a cylindrical package style.
MPS2222RLRAG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
MPS2222RLRMG
MPS2222RLRMG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W in a cylindrical package with through-hole terminals.
MPS2222RLRPG
MPS2222RLRPG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W and operates up to 150 °C. Its through-hole package makes it suitable for various electronic designs.
MPS2907ARLRMG
MPS2907ARLRMG by Onsemi is a PNP BJT transistor for switching applications. It has a max collector-emitter voltage of 60V, DC current gain of 100, and transition frequency of 200MHz. With a power dissipation of 0.36W, it operates at up to 150 °C making it suitable for various electronic circuits.
MPS2907AZL1G
MPS2907AZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.36W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn on/off times (45ns/100ns) and high transition frequency (200MHz).
O-PBCY-W3
WIRE
P2N2222AG
P2N2222AG by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and hFE of 75. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance.
P2N2222AZL1G
P2N2222AZL1G by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. Ideal for amplifier applications due to its max. collector-emitter voltage of 40V and nominal transition frequency of 300MHz.
PN2222G
PN2222G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 75, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (250MHz). Its through-hole package makes it suitable for various electronic designs.
PN2222ARLRMG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
PN2907ARLRAG
PN2907ARLRAG by Onsemi is a PNP BJT with hFE of 50, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring high-speed switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Tin Silver Copper.
DVRN6056-7-F
Diodes Incorporated
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
SINGLE WITH BUILT-IN DIODE
R-PDSO-G6
6
.3 W
DRDNB26W-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;
50 V
SINGLE WITH BUILT-IN RESISTOR
47
.2 W
BIP General Purpose Small Signal
DRDPB16W-7
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;
56
DRDPB26W-7
2N5400RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
120 V
MMBT5401-D87Z
MMBT5401-D87Z by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 150V and a max collector current of 0.6A. It is commonly used for switching applications due to its high DC current gain (hFE) of 50 and fast nominal transition frequency of 100MHz.
TO-236AB
Matte Tin (Sn) - annealed
MMBT4401-AU_R1_000A1
Panjit International
Panjit International's MMBT4401-AU_R1_000A1 is a NPN BJT transistor for switching applications. With VCEsat of 0.75V, hFE of 100, and IC of 0.6A, it operates in temperatures from -55 to 150 °C. This small outline package with Gull Wing terminals suits high-speed switching needs up to 250MHz.
6.5 pF
-55 Cel
AEC-Q101
.75 V
NMB2227AH
Nexperia
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 30;
SEPARATE, 2 ELEMENTS
2
NPN AND PNP
AEC-Q101; IEC-60134
250 ns
NMB2227AZ
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;
PZT2222A/ZLF
Nexperia's PZT2222A/ZLF is a NPN BJT transistor with hFE of 75, VCE of 40V, and fT of 300MHz. Ideal for switching applications due to its fast ton of 35ns and toff of 250ns. Features GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.
COLLECTOR
R-PDSO-G4
4
Tin (Sn)
PZT2222A/ZLX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 4;
PZT4401/ZLX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;
80
MMDT4401Q-7-F
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Additional Features: HIGH RELIABILITY;
HIGH RELIABILITY
MMDT2907VQ-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;
8 pF
R-PDSO-F6
.15 W
AEC-Q101; IATF 16949, MIL-STD-202
Matte Tin (Sn)
FLAT
1.6 V
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