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.6 A Small Signal Bipolar Junction Transistors (BJT) 89

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
CMPT2907ABKPBFREE by Central Semiconductor

CMPT2907ABKPBFREE

Central Semiconductor

CMPT2907ABKPBFREE by Central Semiconductor is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 60V. It is commonly used for switching applications and has a max operating temperature of 150°C.

.6 A

8 pF

60 V

SINGLE

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

MMBT2222A-TP-HF by Micro Commercial Components

MMBT2222A-TP-HF

Micro Commercial Components

MMBT2222A-TP-HF by Micro Commercial Components is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

300 MHz

285 ns

35 ns

MMBT2907A-TP-HF by Micro Commercial Components

MMBT2907A-TP-HF

Micro Commercial Components

MMBT2907A-TP-HF by Micro Commercial Components is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, DC current gain of 50, and power dissipation of 0.35W. With a small outline package style and surface mount capability, it operates at up to 150°C.

.6 A

60 V

SINGLE

50

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.35 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

200 MHz

110 ns

50 ns

MMDT2907AQ-7-F by Diodes Incorporated

MMDT2907AQ-7-F

Diodes Incorporated

MMDT2907AQ-7-F by Diodes Incorporated is a PNP BJT with 2 elements, ideal for switching applications. It features VCEsat of 1.6V, hFE of 50, and IC of 0.6A. With a max operating temp of 150°C and fT of 200MHz, it's suitable for small outline packages in automotive electronics.

.6 A

8 pF

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

DTC363EUT106 by ROHM

DTC363EUT106

ROHM

ROHM DTC363EUT106 is a NPN BJT with built-in resistor for switching applications. Features include 0.2W power dissipation, 20V collector-emitter voltage, and 200MHz transition frequency. Ideal for surface mount designs requiring small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 1

.6 A

20 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

200 MHz

MMST2222AT146 by ROHM

MMST2222AT146

ROHM

ROHM MMST2222AT146 is a NPN BJT transistor for switching applications. Features include VCEsat of 0.6V, hFE of 40, and IC of 0.6A. With a max operating temperature of 150°C, it has a transition frequency of 300MHz making it suitable for high-speed switching circuits.

.6 A

7 pF

40 V

SINGLE

40

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

285 ns

35 ns

.6 V

STBV68 by STMicroelectronics

STBV68

STMicroelectronics

STBV68 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 0.6A, ideal for switching applications. It has a min DC current gain of 3 and can handle up to 0.9W power dissipation, suitable for through-hole mounting in various electronic circuits at temperatures up to 150 °C.

.6 A

400 V

SINGLE

3

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

PMD4002K,115 by NXP Semiconductors

PMD4002K,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified; Terminal Position: DUAL;

.6 A

40 V

SINGLE

50

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

DMB2227A-7 by Diodes Incorporated

DMB2227A-7

Diodes Incorporated

DMB2227A-7 by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max operating temp of 150°C, it offers a transition frequency of 300 MHz and can handle up to 0.6A collector current.

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

285 ns

35 ns

2N4401,116 by NXP Semiconductors

2N4401,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;

.6 A

6.5 pF

40 V

SINGLE

80

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

250 ns

35 ns

.75 V

2N5551,412 by NXP Semiconductors

2N5551,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;

.6 A

6 pF

160 V

SINGLE

30

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.2 V

PN2222A,116 by NXP Semiconductors

PN2222A,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,126 by NXP Semiconductors

PN2222A,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

100

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2222A,412 by NXP Semiconductors

PN2222A,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

40 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

250 ns

35 ns

1 V

PN2907A,126 by NXP Semiconductors

PN2907A,126

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

PN2907A,116 by NXP Semiconductors

PN2907A,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

365 ns

40 ns

1.6 V

MMBT2907AT-TP by Micro Commercial Components

MMBT2907AT-TP

Micro Commercial Components

MMBT2907AT-TP by Micro Commercial Components is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and operates at up to 150°C. Ideal for amplifier applications, it features a min hFE of 100 and can handle a max collector current of 0.6A.

.6 A

60 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

140 MHz

100 ns

45 ns

PN2222ARLRA by Onsemi

PN2222ARLRA

Onsemi

PN2222ARLRA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz). Package style: cylindrical, terminals: 3 through-hole bottom tin lead.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

PN2222ARLRP by Onsemi

PN2222ARLRP

Onsemi

PN2222ARLRP by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 75. It is used for switching applications due to its single configuration and cylindrical package style with through-hole terminals. Operating at up to 150°C, it offers a transition frequency of 300MHz for efficient performance in various electronic circuits.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

235

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

285 ns

35 ns

MMBT2222AT-7 by Diodes Incorporated

MMBT2222AT-7

Diodes Incorporated

Diodes Inc. MMBT2222AT-7 is a NPN BJT with max. Vce of 40V, Ic of 0.6A, and fT of 300MHz. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation capabilities. Suitable for surface mount designs requiring fast switching speeds and moderate current handling.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMBT2907AT-7 by Diodes Incorporated

MMBT2907AT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;

.6 A

60 V

SINGLE

50

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

200 MHz

100 ns

45 ns

MMBT4401T-7 by Diodes Incorporated

MMBT4401T-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

.75 V

MMBT4403T-7 by Diodes Incorporated

MMBT4403T-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE

20

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

200 MHz

255 ns

35 ns

61095 by Micropac Industries

61095

Micropac Industries

Micropac Industries' 61095 is a PNP BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. Features include max. power dissipation of 0.4W, min. DC current gain of 100, and max. operating temp of 200°C. Package style is cylindrical with wire terminals in a round shape.

.6 A

60 V

SINGLE

100

TO-18

O-MBCY-W3

1

3

200 Cel

METAL

ROUND

CYLINDRICAL

PNP

.4 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

SWITCHING

SILICON

300 ns

45 ns

MMBT4401WT1 by Onsemi

MMBT4401WT1

Onsemi

MMBT4401WT1 by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.75V, hFE of 40, and can handle a max IC of 0.6A. With a small outline package style, it operates b/w -55 to 150 °C and has a transition frequency of 250 MHz suitable for various electronic circuits.

.6 A

6.5 pF

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

255 ns

35 ns

.75 V

MMBT2222A-7 by Diodes Incorporated

MMBT2222A-7

Diodes Incorporated

Diodes Inc.'s MMBT2222A-7 is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. With Gull Wing terminals in a small outline package, it offers fast turn-on/off times of 35ns/285ns.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

285 ns

35 ns

MMBT4401-7 by Diodes Incorporated

MMBT4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 40;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMBT4403-7 by Diodes Incorporated

MMBT4403-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;

.6 A

40 V

SINGLE

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

255 ns

35 ns

MMDT2222A-7 by Diodes Incorporated

MMDT2222A-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 285 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMDT2907A-7 by Diodes Incorporated

MMDT2907A-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Application: SWITCHING;

.6 A

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

100 ns

45 ns

MMST2222A-7 by Diodes Incorporated

MMST2222A-7

Diodes Incorporated

Diodes Incorporated MMST2222A-7 is a NPN BJT transistor with hFE of 40, VCE of 40V, and IC of 0.6A. Ideal for high-frequency applications up to 300MHz with fast ton of 35ns and toff of 285ns. Suitable for surface mount designs in small outline packages.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMDT4401-7 by Diodes Incorporated

MMDT4401-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 40 V;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMST4401-7 by Diodes Incorporated

MMST4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

255 ns

35 ns

MMDT4413-7 by Diodes Incorporated

MMDT4413-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn On Time (ton): 35 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMDT4403-7 by Diodes Incorporated

MMDT4403-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 6;

.6 A

40 V

SEPARATE, 2 ELEMENTS

20

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

255 ns

35 ns

MMDT2227-7 by Diodes Incorporated

MMDT2227-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;

.6 A

40 V

SEPARATE, 2 ELEMENTS

35

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

35 ns

CTA2N1P-7-F by Diodes Incorporated

CTA2N1P-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN FET; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE WITH BUILT-IN FET

40

30 ns

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

150 W

Not Qualified

20 ns

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

255 ns

35 ns

.75 V

CTA2P1N-7-F by Diodes Incorporated

CTA2P1N-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN FET; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE WITH BUILT-IN FET

20

30 ns

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

20 ns

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

255 ns

35 ns

.75 V

MMBT2907A-13 by Diodes Incorporated

MMBT2907A-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 100 ns;

.6 A

60 V

SINGLE

50

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

100 ns

45 ns

2N5401RLRAG by Onsemi

2N5401RLRAG

Onsemi

2N5401RLRAG by Onsemi is a PNP BJT with max. VCE of 150V, IC of 0.6A, and hFE of 50. Ideal for amplifier applications due to its max. power dissipation of 1.5W and fT of 100MHz in a cylindrical package with through-hole terminals.

.6 A

150 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

100 MHz

2N5550RLRPG by Onsemi

2N5550RLRPG

Onsemi

2N5550RLRPG by Onsemi is a NPN BJT transistor with 140V VCEO, 0.6A IC, and 100MHz fT. Ideal for amplifier applications due to its 1.5W Ptot, hFE of 20, and operating temp up to 150 °C. Features through-hole terminals in a cylindrical package shape.

.6 A

140 V

SINGLE

20

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

2N4401RLRPG by Onsemi

2N4401RLRPG

Onsemi

2N4401RLRPG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/255ns) and high transition frequency (250MHz).

.6 A

40 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

255 ns

35 ns

P2N2222ARL1G by Onsemi

P2N2222ARL1G

Onsemi

P2N2222ARL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. It is used in amplifier applications due to its high transition frequency of 300MHz and single configuration design for through-hole mounting.

EUROPEAN PART NUMBER

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

300 MHz

285 ns

35 ns

MPS2222ARLG by Onsemi

MPS2222ARLG

Onsemi

MPS2222ARLG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, ideal for switching applications. Features include min. DC current gain of 35 and max. power dissipation of 0.625W in a cylindrical package style. Suitable for through-hole mounting with terminal finish Sn/Ag/Cu.

EUROPEAN PART NUMBER

.6 A

40 V

SINGLE

35

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

300 MHz

285 ns

35 ns

MPS2222ARLRAG by Onsemi

MPS2222ARLRAG

Onsemi

MPS2222ARLRAG by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 35. Ideal for switching applications, it has a max. collector-emitter voltage of 40V and operates at up to 150°C.

.6 A

40 V

SINGLE

35

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

300 MHz

285 ns

35 ns

MPS2222ARLRPG by Onsemi

MPS2222ARLRPG

Onsemi

MPS2222ARLRPG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V and max. collector current of 0.6A. It has a min. DC current gain of 35 and operates at up to 150°C, making it suitable for switching applications in various electronic circuits. With a nominal transition frequency of 300MHz, this through-hole transistor offers fast turn-on/off times for efficient performance.

.6 A

40 V

SINGLE

35

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

300 MHz

285 ns

35 ns

PN2222AG by Onsemi

PN2222AG

Onsemi

PN2222AG by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W, hFE of 75, and fT of 300MHz. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 0.6A.

.6 A

40 V

SINGLE

75

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

300 MHz

285 ns

35 ns

PN2907AG by Onsemi

PN2907AG

Onsemi

PN2907AG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and hFE of 50. Ideal for applications requiring a max collector-emitter voltage of 60V, such as amplifiers and signal processing circuits due to its high transition frequency of 200MHz.

.6 A

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

100 ns

45 ns