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MMDT2907AQ-7-F

Diodes Incorporated

MMDT2907AQ-7-F by Diodes Incorporated

MMDT2907AQ-7-F by Diodes Incorporated is a PNP BJT with 2 elements, ideal for switching applications. It features VCEsat of 1.6V, hFE of 50, and IC of 0.6A. With a max operating temp of 150°C and fT of 200MHz, it's suitable for small outline packages in automotive electronics.

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,616 parts In-Stock

1+ parts

$0.410

100+ parts

$0.158

1k+ parts

$0.104

10k+ parts

$0.103

3,616

$0.410

$0.158

$0.104

$0.103

DigiKey

USA . 1,732 parts In-Stock

1+ parts

$0.410

100+ parts

$0.157

1k+ parts

$0.104

10k+ parts

$0.075

1,732

$0.410

$0.157

$0.104

$0.075

Verical

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.059

51,000

-

-

-

$0.059

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 96,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.328

96,000

-

-

-

$0.328

Flip Electronics

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

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33,000

-

-

-

-

IBS Electronics

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

21,000

-

-

-

$0.058

Vyrian

USA . 9,471 parts In-Stock

1+ parts

-

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9,471

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 37,494 parts In-Stock

1+ parts

$0.440

100+ parts

$0.130

1k+ parts

$0.090

10k+ parts

$0.050

37,494

$0.440

$0.130

$0.090

$0.050

RC Electronics

USA . 5,400 parts In-Stock

1+ parts

-

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

$0.100

5,400

-

$0.110

$0.100

$0.100

iodParts Technologies Inc.

India . 2,930 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,930

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Overview

Unlock the power of precision with the MMDT2907AQ-7-F by Diodes Incorporated. As a leading manufacturer in small signal bipolar junction transistors, this PNP transistor is designed for switching applications with maximum efficiency. With a compact rectangular package and gull wing terminals, this product offers superior performance with a minimum DC current gain of 50 and a maximum operating temperature of 150°C. Trust in Diodes Incorporated to provide high-quality components that deliver exceptional value and reliability for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for switching circuits.

Configuration: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for flexibility in circuit design and applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in those scenarios.

Surface Mount: YES

Surface mount capability makes it easy to integrate this transistor into compact electronic designs.

Maximum VCEsat: 1.6 V

Low VCEsat ensures minimal power loss and efficient operation of the transistor in switching circuits.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation, this transistor can operate efficiently without overheating.

Minimum DC Current Gain (hFE): 50

Having a minimum DC current gain of 50 ensures adequate amplification in various applications.

Maximum Collector-Base Capacitance: 8 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages in circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this transistor suitable for a wide range of environments and applications.

Maximum Collector Current (IC): 0.6 A

High collector current rating allows for operation in circuits that require higher current handling capabilities.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency ensures fast response times and high-frequency performance in signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT2907AQ-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IATF 16949

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Maximum VCEsat:

1.6 V

Trade Compliance

MMDT2907AQ-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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