Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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CSD16323Q3C
Texas Instruments
CSD16323Q3C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 112A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.0072 ohm Drain-Source On Resistance.
AVALANCHE RATED
125 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
25 V
60 A
21 A
.0072 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-N8
e3
1
8
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
3 W
112 A
Not Qualified
FET General Purpose Power
YES
MATTE TIN
NO LEAD
DUAL
30
SWITCHING
SILICON
CSD17506Q5A
CSD17506Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 150A IDM, and 0.0053 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
259 mJ
30 V
100 A
23 A
.0053 ohm
65 pF
3.2 W
150 A
CSD15571Q2
CSD15571Q2 by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a Max Pulsed Drain Current of 52A, Min DS Breakdown Voltage of 20V, and Max Drain Current of 22A. With an Operating Temperature range from -55 to 150 °C, it offers high performance in a SMALL OUTLINE package suitable for various electronic devices.
18 mJ
SINGLE
20 V
22 A
10 A
.0192 ohm
42 pF
S-PDSO-N6
e4
6
SQUARE
2.5 W
52 A
NICKEL PALLADIUM GOLD
CSD19531KCS
CSD19531KCS by Texas Instruments is a N-CHANNEL power FET with a min DS breakdown voltage of 100V. It is designed for switching applications and has a max pulsed drain current of 285A.
180 mJ
100 V
.0088 ohm
17 pF
TO-220
R-PSFM-T3
3
175 Cel
FLANGE MOUNT
179 W
285 A
NO
THROUGH-HOLE
CSD19533KCS
CSD19533KCS by Texas Instruments is an N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 207A and EAS of 106mJ, making it suitable for high-power operations. With a low 0.0122 ohm RDS(on), this FET offers efficient performance in ENHANCEMENT MODE operation.
106 mJ
.0122 ohm
12.5 pF
188 W
207 A
TPIC5403DW
TPIC5403DW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 11.25A Max Pulsed Drain Current, and 17.2mJ Avalanche Energy Rating. With a GULL WING terminal form and ENHANCEMENT MODE operation, it offers efficient power management in various electronic systems.
ESD PROTECTED
17.2 mJ
ISOLATED
COMPLEX
60 V
2.3 A
2.25 A
.27 ohm
75 pF
MS-013AD
R-PDSO-G24
4
24
NOT SPECIFIED
1.39 W
1.4 W
11.25 A
GULL WING
65 ns
85 ns
TPIC5621LDW
TPIC5621LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Max Pulsed Drain Current, and 18mJ Avalanche Energy Rating. With GULL WING terminals and ENHANCEMENT MODE operation, it offers fast switching capabilities in a SMALL OUTLINE package.
LOGIC LEVEL COMPATIBLE
1 A
.48 ohm
50 pF
MS-013AC
R-PDSO-G20
20
1.389 W
3 A
82 ns
110 ns
TPIC5424LDW
TPIC5424LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Pulsed Drain Current, and 0.48 ohm Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates in ENHANCEMENT MODE with max power dissipation of 1.4W at 150°C.
125 pF
132 ns
TPIC5302D
TPIC5302D by Texas Instruments is a N-CHANNEL FET with 3 elements and built-in diode, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 7A, Min DS Breakdown Voltage of 60V, and Avalanche Energy Rating of 10.5mJ. This small outline package has GULL WING terminals and operates in ENHANCEMENT MODE up to 150°C.
10.5 mJ
SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE
1.4 A
.35 ohm
40 pF
MS-012AC
R-PDSO-G16
16
1.087 W
.87 W
7 A
84 ns
56 ns
BF351
Texas Instruments BF351 is a N-CHANNEL FET with 0.05A Max Drain Current and 0.36W Max Power Dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 175°C.
.05 A
.36 W
BF352
Texas Instruments' BF352 is a N-CHANNEL FET with 0.05A max drain current and 0.36W max power dissipation. Ideal for applications requiring high temperature resistance up to 175°C, such as power management systems and industrial control circuits.
TPIC2701N
TPIC2701N by Texas Instruments is a N-CHANNEL FET with 7 elements, built-in diode, and 60V DS breakdown voltage. It's commonly used for switching applications due to its 3A pulsed drain current, 22mJ avalanche energy rating, and 0.9 ohm max on-resistance. Operating in enhancement mode at up to 150°C, it offers high performance in a compact IN-LINE package.
22 mJ
COMMON SOURCE, 7 ELEMENTS WITH BUILT-IN DIODE
.5 A
.9 ohm
MS-001BB
R-PDIP-T16
7
IN-LINE
CSD17576Q5BT
CSD17576Q5BT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 400A IDM, and 0.0029 ohm Drain-Source On Resistance. With a temperature range of -55 to 150 °C, it's ideal for high-power switching circuits in various electronic devices.
115 mJ
30 A
.0029 ohm
196 pF
400 A
CSD25302Q2
CSD25302Q2 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 5A Drain Current, and 0.092 ohm On Resistance. With a max power dissipation of 2.4W and operating temperature of 150°C, it's ideal for high-performance electronic devices.
SOURCE
5 A
.092 ohm
P-CHANNEL
2.4 W
20 A
Other Transistors
CSD75211W1723
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Form: BALL; Terminal Finish: TIN SILVER COPPER;
4.5 A
.07 ohm
R-PBGA-B12
e1
12
GRID ARRAY
1.5 W
TIN SILVER COPPER
BALL
BOTTOM
CSD17556Q5BT
CSD17556Q5BT by Texas Instruments is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 214A IDM. Ideal for SWITCHING applications, it features 0.0018 ohm Max RDS(on) and operates b/w -55 to 150 °C.
500 mJ
34 A
.0018 ohm
88 pF
214 A
CSD17559Q5T
CSD17559Q5T by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 400A IDM, and 0.0015 ohm Drain-Source Resistance. Ideal for high-power switching circuits with operating temperatures ranging from -55 to 150°C.
541 mJ
40 A
.0015 ohm
113 pF
CSD25401Q3
CSD25401Q3 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 82A Max Pulsed Drain Current, and 0.0182 ohm Max RDS(on). With a PLASTIC/EPOXY body and ENHANCEMENT MODE operation, it offers reliable performance in various electronic systems.
14 A
.0182 ohm
2.8 W
82 A
CSD16321Q5C
CSD16321Q5C by Texas Instruments is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 200A IDM, 218mJ EAS, and 0.0038 ohm RDS(on). Operating from -55 to 150 °C, this MOSFET has a compact SMALL OUTLINE package with DUAL terminals.
218 mJ
.0038 ohm
3.1 W
200 A
CSD16325Q5C
CSD16325Q5C by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features 200A IDM, 500mJ EAS, and 0.0029 ohm Drain-Source On Resistance. This SINGLE transistor in PLASTIC/EPOXY package operates from -55 to 150 °C and has a max power dissipation of 3.1W.
33 A
CSD16322Q5C
CSD16322Q5C by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 136A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE.
97 A
.007 ohm
136 A
CSD19535KCS
CSD19535KCS by Texas Instruments is a N-CHANNEL FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 400A IDM and 0.0044 ohm RDS(on). Operating from -55 to 175 °C, this transistor has a built-in diode and 38pF Crss.
451 mJ
.0044 ohm
38 pF
CSD87384MT
CSD87384MT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 30V. It is designed for switching applications and has a max pulsed drain current of 95A.
231 mJ
.0089 ohm
114 pF
R-PBGA-B5
2
5
95 A
Nickel/Palladium/Gold (Ni/Pd/Au)
BUTT
CSD16340Q3T
CSD16340Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Drain Current of 21A, Min DS Breakdown Voltage of 25V, and Max Pulsed Drain Current of 115A. With a package style of SMALL OUTLINE and operating temperatures ranging from -55 to 150°C, it's ideal for power management in various electronic devices.
80 mJ
.0078 ohm
69 pF
S-PDSO-N8
115 A
CSD18503Q5AT
CSD18503Q5AT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 321A IDM, and 0.0062 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
157 mJ
40 V
19 A
.0062 ohm
16 pF
321 A
CSD87501LT
CSD87501LT by Texas Instruments is a N-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features COMMON DRAIN configuration, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology. With a max operating temperature of 150°C, it offers reliable performance in various electronic systems.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
198 pF
R-PBGA-B10
10
NICKEL GOLD
CSD18563Q5A-P
CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
146 mJ
15 A
.0108 ohm
5.1 pF
251 A
CSD19535KTT
CSD19535KTT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 400A IDM, and 0.0041 ohm Drain-Source On Resistance. With a max operating temperature of 175°C, this MOSFET in SMALL OUTLINE package is ideal for high-power switching circuits.
.0041 ohm
TO-263AB
R-PSSO-G2
CSD18542KCS
CSD18542KCS by Texas Instruments is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for high-power applications, it features a max power dissipation of 200W, operating temperature range of -55 to 175°C, and avalanche energy rating of 281mJ.
281 mJ
170 A
14 pF
1.8
200 W
CSD16415Q5T
CSD16415Q5T by Texas Instruments is an N-CHANNEL FET with 25V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0018 ohm Drain-Source On Resistance. Suitable for high-power electronics requiring efficient switching capabilities.
38 A
230 pF
R-PDSO-N5
CSD18535KTTT
CSD18535KTTT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 400A.
616 mJ
31 pF
R-PSSO-G3
CSD18535KTT
CSD18535KTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0029 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 175°C temperature making it suitable for high-power electronic devices.
CSD18536KTTT
CSD18536KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0022 ohm Drain-Source On Resistance. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various power management systems.
819 mJ
.0022 ohm
51 pF
CSD18542KTTT
CSD18542KTTT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 400A.
.0051 ohm
CSD19505KTTT
CSD19505KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a DS Breakdown Voltage of 80V, IDM of 400A, and EAS of 510mJ. With an operating range from -55 to 175 °C, it features a Drain connection and 0.0038 ohm On Resistance.
510 mJ
80 V
34 pF
CSD19538Q3A
CSD19538Q3A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 37A Pulsed Drain Current, and 0.072 ohm Drain-Source On Resistance. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and comes in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
8.1 mJ
4.9 A
.072 ohm
16.4 pF
R-PDSO-F5
37 A
FLAT
CSD18510KTT
CSD18510KTT by Texas Instruments is an N-CHANNEL Power FET for SWITCHING applications. It has a 40V DS Breakdown Voltage, 400A Max Pulsed Drain Current, and 0.0026 ohm Max Drain-Source Resistance. This SINGLE configuration FET operates in ENHANCEMENT MODE with a temperature range of -55 to 175 °C.
328 mJ
.0026 ohm
551 pF
CSD18512Q5BT
CSD18512Q5BT by Texas Instruments is an N-CHANNEL FET with 40V DS Breakdown Voltage and 32A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a 0.0023 ohm Drain-Source On Resistance. This PLASTIC/EPOXY transistor has a max operating temperature of 150°C and features a built-in DIODE.
205 mJ
32 A
.0023 ohm
333 pF
CSD87313DMST
CSD87313DMST by Texas Instruments is an N-CHANNEL FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features COMMON DRAIN configuration, 2 ELEMENTS with BUILT-IN DIODE, and operates in ENHANCEMENT MODE. With a max operating temperature of 150°C and small outline package style, it offers reliable performance in various electronic devices.
67 mJ
200 pF
CSD18511KCS
CSD18511KCS by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 400A IDM, and 0.0042 ohm RDS(on). Suitable for ENHANCEMENT MODE operation with -55 to 175 °C temperature range.
156 mJ
110 A
.0042 ohm
306 pF
TO-220AB
CSD18511KTT
CSD18511KTT by Texas Instruments is an N-CHANNEL Power FET with a 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 156mJ, operating in ENHANCEMENT MODE. With a low 0.0042 ohm Drain-Source On Resistance, this FET is suitable for high-current switching circuits.
CSD18511KTTT
CSD18511KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage, it offers 400A IDM and 0.0042 ohm ID. Operating in -55 to 175 °C, this MOSFET has a Drain Connection and 306pF Crss.
CSD17507Q5AT
CSD17507Q5AT by Texas Instruments is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 163A IDM, 45mJ EAS, and 0.0161 ohm RDS(ON), operating in -55 to 150 °C temperature range. Suitable for surface mount design with DUAL terminal position and DRAIN case connection.
45 mJ
65 A
.0161 ohm
30 pF
39 W
163 A
LMG3422R030RQZR
LMG3422R030RQZR by Texas Instruments is a 600V N-CHANNEL FET for SWITCHING applications. It features a max drain current of 55A, 0.035 ohm RDS(on), and operates in ENHANCEMENT MODE. With a temp range of -40 to 125 °C, it's ideal for high-power electronics requiring fast switching speeds.
600 V
55 A
.035 ohm
S-PQCC-N54
54
125 Cel
-40 Cel
CHIP CARRIER
QUAD
GALLIUM NITRIDE
86 ns
CSD16321Q5T
CSD16321Q5T by Texas Instruments is an N-CHANNEL Power FET with 25V DS Breakdown Voltage and 0.0038 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, it features a max IDM of 400A and EAS of 218mJ. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 150 °C, making it suitable for various power management needs.
150 pF
113 W
LMG3425R030RQZT
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Turn On Time (ton): 56 ns; Maximum Turn Off Time (toff): 86 ns; Package Shape: SQUARE;
JUNCTION
DEPLETION MODE
LMG3425R030RQZR
LMG3425R030RQZR by Texas Instruments is a N-CHANNEL FET with 600V DS Breakdown Voltage, 55A Drain Current, and 0.035 ohm On Resistance. Ideal for SWITCHING applications in DEPLETION MODE, this transistor features GALLIUM NITRIDE technology and operates b/w -40 to 125 °C.
LMG3422R050RQZT
LMG3422R050RQZT by Texas Instruments is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max ID of 44A and 0.055 ohm Drain-Source On Resistance, this ENHANCEMENT MODE transistor operates b/w -40 to 125 °C, with turn on/off times of 56/86 ns.
44 A
.055 ohm
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