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Texas Instruments Power Field Effect Transistors (FET) 49

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
LMG3425R050RQZT by Texas Instruments

LMG3425R050RQZT

Texas Instruments

LMG3425R050RQZT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features a 600V DS Breakdown Voltage, 44A Drain Current, and 0.055 ohm On Resistance. With an Operating Temperature range of -40 to 125 °C, this MOSFET is ideal for high-power switching systems in various industries.

COMPLEX

600 V

44 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

S-PQCC-N54

e4

3

1

54

ENHANCEMENT MODE

125 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

N-CHANNEL

YES

NICKEL PALLADIUM GOLD

NO LEAD

QUAD

30

SWITCHING

GALLIUM NITRIDE

86 ns

56 ns