Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SPP80N06S2-H5
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSFM-T3; Package Shape: RECTANGULAR;
AVALANCHE RATED
700 mJ
SINGLE WITH BUILT-IN DIODE
55 V
80 A
.0055 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
300 W
320 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SILICON
SPB80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; No. of Terminals: 2;
DRAIN
.0065 ohm
TO-263AB
R-PSSO-G2
e0
2
SMALL OUTLINE
YES
TIN LEAD
GULL WING
SPP80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
STB100NF03L-03-1
STMicroelectronics
STB100NF03L-03-1 by STMicroelectronics is a N-channel Power FET with 30V DS breakdown voltage, 400A IDM, and 0.0045 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a rectangular package suitable for enhancement mode operation.
LOGIC LEVEL COMPATIBLE
1900 mJ
30 V
100 A
.0045 ohm
TO-262AA
R-PSIP-T3
IN-LINE
400 A
SWITCHING
STB40NS15T4
STB40NS15T4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 40 A, breakdown voltage of 150 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
350 mJ
150 V
40 A
.052 ohm
245
160 A
30
STP100NF04
STP100NF04 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 40 V. It operates in enhancement mode with low on-resistance of 0.0046 Ω. This robust transistor supports high power dissipation up to 300 W.
1200 mJ
40 V
120 A
.0046 ohm
480 A
Matte Tin (Sn)
STB85NF55LT4
STB85NF55LT4 from STMicroelectronics is an N-channel MOSFET ideal for switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Its compact design ensures efficient performance in power management systems.
980 mJ
.01 ohm
STP85NF55L
STP85NF55L by STMicroelectronics is a N-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.01 ohm RDS(on). It's used for SWITCHING applications due to its 300W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE.
STW80NF55-08
STW80NF55-08 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 55 V. It operates in enhancement mode with low on-resistance of just 0.008 Ω. This robust transistor supports high power dissipation up to 300 W, making it suitable for demanding electronic circuits.
1000 mJ
.008 ohm
TO-247
STB160NF3LLT4
STB160NF3LLT4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 160 A, breakdown voltage of 30 V, and low on-resistance of 0.004 Ω. Ideal for high-performance power management in compact designs.
.004 ohm
640 A
STP150NF55
STP150NF55 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
850 mJ
.006 ohm
TIN
STW150NF55
STW150NF55 by STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a max drain current of 120 A and a breakdown voltage of 55 V. It operates in enhancement mode with low on-resistance (0.006 Ω). Ideal for high-efficiency power management in various electronic devices.
STP80PF55
STP80PF55 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications, it has a max power dissipation of 300W and operates at up to 175°C.
1400 mJ
.018 ohm
P-CHANNEL
Other Transistors
STW20NK70Z
STW20NK70Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 700V breakdown voltage, 20A max drain current, and 300W power dissipation. Ideal for high-efficiency power management in various electronic devices.
700 V
20 A
.285 ohm
TO-247AC
150 Cel
STP185N10F3
STP185N10F3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
100 V
.0048 ohm
STP80NF06
STP80NF06 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
LOW THRESHOLD
870 mJ
60 V
STW80NF06
STW80NF06 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
TO-247AA
NOT SPECIFIED
STB130NS04ZBT4
STB130NS04ZBT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 33 V, and operates at up to 175 °C. Ideal for power management in compact designs.
500 mJ
33 V
.009 ohm
SPI80N06S-08
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .008 ohm; Transistor Element Material: SILICON;
260
STP120NF04
STP120NF04 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.
.005 ohm
STW54NK30Z
STW54NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS breakdown voltage, 54A max drain current, and 0.06 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with 200A pulsed drain current capability.
400 mJ
300 V
54 A
.06 ohm
200 A
STH250N55F3-6
STH250N55F3-6 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 180 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance with minimal resistance.
ULTRA-LOW RESISTANCE
180 A
.0026 ohm
R-PSSO-G6
6
720 A
STB200NF04L-1
STB200NF04L-1 by STMicroelectronics is a N-channel FET with 40V DS breakdown voltage, 120A max drain current, and 0.0043 ohm on-resistance. Ideal for switching applications due to its 480A pulsed drain current capability and built-in diode configuration.
.0043 ohm
STB200NF04L
STB200NF04L by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for power management in compact designs.
STP200NF04L
STP200NF04L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 40 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
.0038 ohm
IPB100N06S3-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2;
2390 mJ
.003 ohm
IPB100N06S3L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 55 V; Operating Mode: ENHANCEMENT MODE;
690 mJ
TO-263
IPP100N06S3-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Terminal Form: THROUGH-HOLE;
.0033 ohm
IPP100N06S3L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 175 Cel;
STB60NF10T4
STB60NF10T4 from STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-performance power management in compact designs.
485 mJ
.023 ohm
Matte Tin (Sn) - annealed
STB76NF75
STB76NF75 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 320A IDM, and 0.011 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temp. The transistor has a built-in diode, GULL WING terminals, and can handle up to 80A drain current.
75 V
.011 ohm
STB76NF80
STB76NF80 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features an 80V breakdown voltage, 320A pulsed drain current, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
80 V
STI76NF75
STI76NF75 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 75 V, and operates at up to 175 °C. Ideal for high-power circuits with low on-resistance (0.011 Ω).
STH270N4F3-6
STH270N4F3-6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 180A ID, and 0.0017 ohm RDS(on). Ideal for SWITCHING applications, it has a max power dissipation of 300W in a small outline package.
.0017 ohm
IPB051NE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Terminal Position: SINGLE;
826 mJ
85 V
.0051 ohm
IPB05CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .0051 ohm; Maximum Pulsed Drain Current (IDM): 400 A;
IPI05CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;
.0054 ohm
IPP048N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain-Source On Resistance: .0047 ohm;
810 mJ
.0047 ohm
FQA11N90C_F109
Fairchild Semiconductor
Fairchild Semiconductor's FQA11N90C_F109 is a N-CHANNEL Power FET with 900V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 44A IDM and 960mJ EAS. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 300W at 150°C.
960 mJ
900 V
11 A
1.4 ohm
44 A
FQA11N90_F109
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 11.4 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
11.4 A
.96 ohm
45.6 A
STB60NF10-1
STB60NF10-1 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 80 A, breakdown voltage of 100 V, and power dissipation up to 300 W. Ideal for high-efficiency circuits, it operates in enhancement mode with built-in diode support.
IPP050N06NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;
FQA13N80-F109
Onsemi
Onsemi's FQA13N80-F109 is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. Ideal for SWITCHING applications, it offers 50.4A IDM and 1100mJ EAS ratings. With 0.75 ohm RDS(on) and 300W Pd, this MOSFET operates in ENHANCEMENT MODE up to 150°C.
1100 mJ
800 V
12.6 A
.75 ohm
50.4 A
FDB8832-F085
FDB8832-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 34A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 300W.
1246 mJ
34 A
.0022 ohm
Tin (Sn)
STH240N10F7-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; JESD-30 Code: R-PSSO-G2;
ULTRA LOW RESISTANCE
.0025 ohm
STH265N6F6-2AG
STH265N6F6-2AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 180 A and power dissipation up to 300 W, operating efficiently at temperatures up to 175 °C. Perfect for power management in various electronic devices.
STH265N6F6-6AG
STH265N6F6-6AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 180 A and power dissipation of 300 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
STW48N60M2-4
STW48N60M2-4 by STMicroelectronics is a N-CHANNEL FET with 42A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial and automotive sectors.
42 A
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