Loading...

300 W Power Field Effect Transistors (FET) 151

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STW48N60M2 by STMicroelectronics

STW48N60M2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 42 A; Maximum Operating Temperature: 150 Cel;

SINGLE

42 A

42 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

300 W

FET General Purpose Power

NO

MATTE TIN

STB120N10F4 by STMicroelectronics

STB120N10F4

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Peak Reflow Temperature (C): NOT SPECIFIED;

AVALANCHE RATED

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

120 A

120 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

300 W

390 A

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP120N10F4 by STMicroelectronics

STP120N10F4

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

AVALANCHE RATED

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

120 A

120 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

390 A

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP265N6F6AG by STMicroelectronics

STP265N6F6AG

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

300 W

FET General Purpose Power

NO

NOT SPECIFIED

STH290N4F6-6AG by STMicroelectronics

STH290N4F6-6AG

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Minimum Operating Temperature: -55 Cel;

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

180 A

.0017 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G6

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

300 W

720 A

AEC-Q101

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP80NF55-08AG by STMicroelectronics

STP80NF55-08AG

STMicroelectronics

STP80NF55-08AG by STMicroelectronics is a N-channel power FET with 55V DS breakdown voltage and 80A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 300W, this MOSFET has a package style of flange mount and can withstand temperatures up to 175°C.

1000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

80 A

80 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

320 A

AEC-Q101

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NVMTS1D2N08H by Onsemi

NVMTS1D2N08H

Onsemi

NVMTS1D2N08H by Onsemi is a Power FET with N-CHANNEL polarity, 80V DS breakdown voltage, and 900A IDM. Ideal for applications requiring high power dissipation and operating temperatures up to 175°C. Suitable for automotive electronics due to AEC-Q101 reference standard compliance.

3170 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

337 A

337 A

.0011 ohm

METAL-OXIDE SEMICONDUCTOR

43 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

300 W

900 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON