Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STB230NH03L
STMicroelectronics
STB230NH03L by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, breakdown voltage of 30 V, and power dissipation up to 300 W. Ideal for compact designs with its surface mount configuration.
1150 mJ
SINGLE WITH BUILT-IN DIODE
30 V
80 A
.003 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
1
2
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
300 W
1000 A
Not Qualified
FET General Purpose Power
YES
GULL WING
SINGLE
SWITCHING
SILICON
STP200N4F3
STP200N4F3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
862 mJ
DRAIN
40 V
120 A
.0044 ohm
TO-220AB
R-PSFM-T3
e3
3
FLANGE MOUNT
480 A
NO
MATTE TIN
THROUGH-HOLE
IPP04CN10NG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Terminal Finish: TIN;
1000 mJ
100 V
100 A
.0042 ohm
400 A
TIN
IPP05CN10LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 100 A; JEDEC-95 Code: TO-220AB;
LOGIC LEVEL COMPATIBLE
826 mJ
.0051 ohm
IRFB4310GPBF
International Rectifier
IRFB4310GPBF by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a max IDM of 550A and 0.007 ohm Drain-Source On Resistance, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W and can handle up to 130A Drain Current.
980 mJ
130 A
75 A
.007 ohm
550 A
MATTE TIN OVER NICKEL
STW90NF20
STW90NF20 by STMicroelectronics is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 83 A and power dissipation up to 300 W, making it ideal for power management in industrial systems. Its robust design operates effectively at temperatures up to 150 °C.
83 A
TO-247AD
150 Cel
Matte Tin (Sn)
IPI023NE7N3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; No. of Elements: 1;
1100 mJ
75 V
.0023 ohm
TO-262AA
R-PSIP-T3
IN-LINE
STB141NF55-1
STB141NF55-1 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 55 V. It operates in enhancement mode with a low on-resistance of just 0.008 Ω. This robust transistor supports high power dissipation up to 300 W, making it suitable for demanding environments.
1300 mJ
55 V
.008 ohm
290 pF
-55 Cel
320 A
STB141NF55
STB141NF55 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at temperatures up to 175 °C. Ideal for power management in compact designs, it ensures reliable performance.
245
Matte Tin (Sn) - annealed
30
STP141NF55
STP141NF55 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at temperatures from -55 °C to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
STP180NS04ZC
STP180NS04ZC by STMicroelectronics is a N-CHANNEL FET with 33V DS Breakdown Voltage. It has 480A IDM and 1000mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.0042 ohm RDS(on) and can handle up to 175°C temperature.
33 V
STV200N55F3
STV200N55F3 from STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 200 A, a breakdown voltage of 55 V, and low on-resistance of 0.0025 Ω. Ideal for high-power circuits, it ensures reliable performance in compact designs.
200 A
.0025 ohm
R-PDSO-G10
10
250
800 A
DUAL
STV240N75F3
STV240N75F3 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 960A IDM, 0.0026 ohm RDS(on), and 300W Pd max. The transistor operates in ENHANCEMENT MODE with a max temp of 175°C, making it suitable for high-power electronic systems.
600 mJ
240 A
.0026 ohm
960 A
STV250N55F3
STV250N55F3 from STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 250 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance and built-in diode functionality.
250 A
.0022 ohm
FDP86363_F085
Fairchild Semiconductor
FDP86363_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 110A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0028 ohm On Resistance, and operates in ENHANCEMENT MODE up to 175°C.
512 mJ
80 V
110 A
.0028 ohm
AEC-Q101
BUK753R1-40B,127
NXP Semiconductors
NXP Semiconductors BUK753R1-40B,127 is a N-channel FET with 40V DS breakdown voltage and 902A IDM for switching applications. It features a single configuration with built-in diode, 0.0031 ohm RDS(on), and 300W Pd max in a plastic/epoxy package. Ideal for enhancement mode operation at up to 175°C.
1600 mJ
.0031 ohm
902 A
BUK9506-75B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
852 mJ
.0066 ohm
612 A
BUK952R8-30B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
2300 mJ
950 A
BUK953R2-40B,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Transistor Element Material: SILICON;
1200 mJ
.0035 ohm
888 A
BUK9E3R2-40B,127
BUK9E3R2-40B,127 by NXP Semiconductors is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A Max ID. Ideal for SWITCHING applications, it features a built-in DIODE, 888A IDM, and 0.0035 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 300W and can withstand up to 175°C.
PHP160NQ08T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .0056 ohm; Case Connection: DRAIN;
560 mJ
.0056 ohm
PHP193NQ06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 240 A;
.004 ohm
PHP222NQ04LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-609 Code: e3; Terminal Position: SINGLE;
PHP225NQ04T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
PSMN004-55W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 100 A; Additional Features: LOGIC LEVEL COMPATIBLE;
357 mJ
.005 ohm
TO-247
300 A
PSMN009-100W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;
650 mJ
.009 ohm
PSMN020-150W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .02 ohm; JESD-30 Code: R-PSFM-T3;
707 mJ
150 V
73 A
.02 ohm
290 A
PSMN040-200W,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Avalanche Energy Rating (EAS): 661 mJ; JESD-609 Code: e3;
661 mJ
200 V
50 A
.04 ohm
SPB100N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
AVALANCHE RATED
810 mJ
TO-263AB
SPB100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Operating Temperature: 175 Cel;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0034 ohm
e0
260
TIN LEAD
SPB80N04S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AA; Operating Mode: ENHANCEMENT MODE;
TO-263AA
SPI100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Qualification: Not Qualified;
.0037 ohm
SPP100N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 30 V; Qualification: Not Qualified;
.0033 ohm
SPP100N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
SPB100N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Case Connection: DRAIN;
SPB100N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 100 A;
.0047 ohm
SPB100N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE;
SPB100N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): SMALL OUTLINE; Terminal Finish: MATTE TIN;
.0068 ohm
SPB100N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Position: SINGLE; Maximum Drain Current (ID): 100 A;
.0084 ohm
SPP100N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 40 V; JESD-30 Code: R-PSFM-T3;
.0036 ohm
SPP100N04S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Package Shape: RECTANGULAR;
SPP100N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 3; Transistor Element Material: SILICON;
SPP100N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0059 ohm
SPP100N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;
.0071 ohm
SPP100N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain-Source On Resistance: .0087 ohm;
.0087 ohm
STB85NF55T4
STB85NF55T4 from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
STP85NF55
STP85NF55 by STMicroelectronics is a N-CHANNEL FET with 55V DS Breakdown Voltage, 320A IDM, and 0.008 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-power requirements.
SPB80N06S2-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; Maximum Drain-Source On Resistance: .0055 ohm;
700 mJ
.0055 ohm
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