Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BUK7510-55AL,127
NXP Semiconductors
NXP Semiconductors' BUK7510-55AL,127 is an N-channel Power FET with 122A max drain current and 300W power dissipation. Ideal for applications requiring high-power switching in enhancement mode operation up to 175°C, featuring metal-oxide semiconductor technology and single configuration.
SINGLE
122 A
METAL-OXIDE SEMICONDUCTOR
e3
1
ENHANCEMENT MODE
175 Cel
N-CHANNEL
300 W
FET General Purpose Power
NO
Tin (Sn)
STH300NH02L-6
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 6; Maximum Drain-Source On Resistance: .0012 ohm;
1600 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
24 V
180 A
.0012 ohm
R-PSSO-G6
6
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
720 A
FET General Purpose Powers
YES
GULL WING
SWITCHING
SILICON
STP210N75F6
STP210N75F6 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.0037 ohm On Resistance, and 480A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
75 V
120 A
.0037 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
480 A
MATTE TIN
THROUGH-HOLE
STH210N75F6-2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
.0028 ohm
R-PSSO-G2
2
STI300N4F6
STI300N4F6 by STMicroelectronics is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A Drain Current, and 0.002 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 175°C max temperature. Package: PLASTIC/EPOXY RECTANGULAR IN-LINE with 3 terminals.
40 V
160 A
.002 ohm
TO-262AA
R-PSIP-T3
IN-LINE
640 A
STW56NM60N
STW56NM60N by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A Drain Current, 0.06 ohm On Resistance, and 180A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W at 150 °C.
600 V
45 A
.06 ohm
TO-247
150 Cel
STI260N6F6
STI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 120A ID, and 0.003 ohm RDS(on). Ideal for SWITCHING applications due to its 480A IDM and 300W Pd. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C and Matte Tin finish.
60 V
.003 ohm
Matte Tin (Sn)
STH240N75F3-2
STH240N75F3-2 by STMicroelectronics is a N-CHANNEL FET with 75V DS Breakdown Voltage, 180A ID, and 3Ω RDS(on). Ideal for SWITCHING applications due to its 720A IDM and 300W Pd. The transistor operates in ENHANCEMENT MODE with a max temp of 175 °C.
600 mJ
3 ohm
STH260N6F6-6
STH260N6F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
STH400N4F6-2
STH400N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring robust performance.
STH400N4F6-6
STH400N4F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. This single configuration transistor is surface mountable, utilizing metal-oxide semiconductor technology.
STI360N4F6
STI360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
STP360N4F6
STP360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates at up to 175°C temperature, featuring metal-oxide semiconductor technology.
STH270N4F3-2
STH270N4F3-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID, 300W power dissipation, and operates up to 175°C. Ideal for high-power applications requiring efficient switching capabilities in surface-mount configurations.
STH360N4F6-2
STH360N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates at up to 175 °C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.
STI400N4F6
STI400N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C.
STP400N4F6
STMicroelectronics' STP400N4F6 is a N-CHANNEL FET with 120A max drain current and 300W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C, utilizing metal-oxide semiconductor technology for efficient performance.
IPB050N06NGATMA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Case Connection: DRAIN;
AVALANCHE RATED
810 mJ
100 A
.0047 ohm
TO-263AB
400 A
Not Qualified
STH320N4F6-2
STH320N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 200A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
200 A
IPB80N08S2L07ATMA1
IPB80N08S2L07ATMA1 by Infineon is a N-CHANNEL FET with 75V DS Breakdown Voltage, 320A IDM, and 0.009 ohm RDS(on). It's used in power applications due to its 300W Pdiss, -55 to 175°C operating temp range, and AEC-Q101 standard compliance.
80 A
.009 ohm
590 pF
-55 Cel
260
320 A
AEC-Q101
TIN
IPP80N08S2L07AKSA1
IPP80N08S2L07AKSA1 by Infineon Technologies is a N-CHANNEL Power FET with 75V DS Breakdown Voltage, 320A IDM, and 0.0071 ohm RDS(on). It is commonly used in automotive applications due to its AEC-Q101 reference standard.
.0071 ohm
STB80NF03L-04T4
STB80NF03L-04T4 by STMicroelectronics is a N-channel FET with 30V DS breakdown voltage, 80A max drain current, and 0.0055 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with 320A pulsed drain current. Package style is small outline with gull wing terminals.
2300 mJ
30 V
.0055 ohm
245
Matte Tin (Sn) - annealed
30
SPB80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.0031 ohm
e0
220
TIN LEAD
SPB80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.0035 ohm
SPB80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 80 A;
.0034 ohm
SPB80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Additional Features: AVALANCHE RATED; Operating Mode: ENHANCEMENT MODE;
55 V
.0048 ohm
SPB80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (Abs) (ID): 80 A;
800 mJ
.0057 ohm
SPB80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
SPB80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-263AB; Minimum DS Breakdown Voltage: 75 V;
.0087 ohm
SPP80N03S2-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
SPP80N03S2L-03
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
.0038 ohm
SPP80N04S2-04
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 80 A; Transistor Element Material: SILICON;
SPP80N06S2-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB;
.0051 ohm
SPP80N06S2L-05
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
.006 ohm
SPP80N08S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 80 A;
.0074 ohm
NOT APPLICABLE
SPP80N08S2L-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Transistor Element Material: SILICON;
STB80NF03L-04-1
STB80NF03L-04-1 by STMicroelectronics is a N-channel Power FET with 30V DS breakdown voltage, 320A IDM, and 0.0055 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode. Operating in enhancement mode, it has a max power dissipation of 300W and can handle up to 80A drain current.
STP260N6F6
STP260N6F6 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A Drain Current, 0.003 ohm On Resistance, and 300W Power Dissipation in a RECTANGULAR package. Operating in ENHANCEMENT MODE, it has a max temperature of 175 °C and is suitable for high-power electronic systems.
FDB86363_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDB86363_F085 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. It has 110A Drain Current, 0.0024 ohm On Resistance, and 300W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it comes in a PLASTIC/EPOXY package with GULL WING terminals.
512 mJ
80 V
110 A
.0024 ohm
STB80NF55-08T4
STB80NF55-08T4 by STMicroelectronics is a N-channel FET with 55V DS breakdown voltage, 80A max drain current, and 0.008 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. Suitable for surface mount assembly, it has a max power dissipation of 300W and can withstand temperatures up to 175 °C.
1000 mJ
.008 ohm
STB80PF55T4
STB80PF55T4 by STMicroelectronics is a P-CHANNEL FET with 55V DS Breakdown Voltage, 80A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications due to its 320A Pulsed Drain Current and 1.4mJ Avalanche Energy Rating in a small outline package.
1.4 mJ
.018 ohm
P-CHANNEL
Other Transistors
IPB80N06S2L-H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel;
LOGIC LEVEL COMPATIBLE
700 mJ
.0062 ohm
IPB120N04S3-02
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; No. of Terminals: 2; Transistor Element Material: SILICON;
ULTRA LOW RESISTANCE
1880 mJ
.0023 ohm
PHB160NQ08T,118
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 75 A;
560 mJ
75 A
.0056 ohm
240 A
STB300NH02L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (ID): 120 A; Maximum Pulsed Drain Current (IDM): 480 A;
.0018 ohm
STP300NH02L
STP300NH02L by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 24 V, and power dissipation up to 300 W. Ideal for high-efficiency power management in various electronic devices.
.0022 ohm
STV300NH02L
STV300NH02L by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 280 A, a breakdown voltage of 24 V, and operates at temperatures from -55 °C to 175°C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
2296 mJ
280 A
.001 ohm
R-XDSO-G10
10
UNSPECIFIED
250
1120 A
DUAL
STB200N4F3
STB200N4F3 from STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 120 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
862 mJ
.004 ohm
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