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NPN Power Bipolar Junction Transistors (BJT) 402

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ZTX618STOA by Diodes Incorporated

ZTX618STOA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STOB by Diodes Incorporated

ZTX618STOB

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1.5 W

NO

WIRE

SINGLE

SILICON

140 MHz

.255 V

ZTX618STZ by Diodes Incorporated

ZTX618STZ

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3.5 A;

3.5 A

30 pF

20 V

SINGLE

40

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

1.5 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

140 MHz

.255 V

STD878T4 by STMicroelectronics

STD878T4

STMicroelectronics

STD878T4 by STMicroelectronics is a NPN Power BJT with 30V VCEO, 5A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150 °C, it offers a min hFE of 70 and matte tin finish.

COLLECTOR

5 A

30 V

SINGLE

70

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

2STL2580 by STMicroelectronics

2STL2580

STMicroelectronics

2STL2580 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 1A. It has a min. DC current gain of 60, suitable for switching applications with a max. power dissipation of 1.5W in cylindrical package style for through-hole mounting at up to 150 °C operating temperature.

1 A

400 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STFN42 by STMicroelectronics

STFN42

STMicroelectronics

STFN42 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 1A IC, and 1.4W power dissipation. It's used for switching applications in a small outline package with matte tin terminals, operating up to 150 °C.

COLLECTOR

1 A

400 V

SINGLE

5

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.4 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

STX0560 by STMicroelectronics

STX0560

STMicroelectronics

STX0560 by STMicroelectronics is a NPN BJT transistor with 600V VCE, 1A IC, and 1.5W power dissipation. Ideal for switching applications due to its single configuration in a cylindrical package with matte tin finish.

1 A

600 V

SINGLE

70

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

TRD136DT4 by STMicroelectronics

TRD136DT4

STMicroelectronics

STMicroelectronics TRD136DT4 is a NPN BJT transistor with 400V VCE, 3A IC, and 20W power dissipation. Ideal for switching applications due to its built-in diode and hFE of 10. Its small outline package makes it suitable for surface mount designs in various electronic systems.

3 A

400 V

SINGLE WITH BUILT-IN DIODE

10

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

20 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

TRD236DT4 by STMicroelectronics

TRD236DT4

STMicroelectronics

STMicroelectronics TRD236DT4 is a NPN BJT transistor with 400V VCEO and 4A IC. It has a max power dissipation of 35W, hFE of 8, and operates up to 150 °C. Ideal for switching applications in surface mount designs due to its small outline package and built-in diode configuration.

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

35 W

Other Transistors

YES

GULL WING

SINGLE

SWITCHING

SILICON

NJVNJD35N04G by Onsemi

NJVNJD35N04G

Onsemi

NJVNJD35N04G by Onsemi is a NPN Darlington BJT with 45W power dissipation, 4A collector current, and 300 min hFE. Ideal for automotive applications due to AEC-Q101 standard compliance and high transition frequency of 90MHz.

4 A

DARLINGTON

300

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

45 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

90 MHz

NSV40301MZ4T1G by Onsemi

NSV40301MZ4T1G

Onsemi

NSV40301MZ4T1G by Onsemi is a NPN Power BJT with 40V VCE, 3A IC, and small outline package. Ideal for power management applications requiring high collector current and voltage capabilities.

3 A

40 V

e3

1

SMALL OUTLINE

260

NPN

MATTE TIN

30

SBCP68T1G by Onsemi

SBCP68T1G

Onsemi

SBCP68T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.5V, hFE of 60, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and small outline package style. Operating temperature range from -65 to 150°C makes it suitable for various environments.

COLLECTOR

1 A

20 V

SINGLE

60

TO-261

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

60 MHz

.5 V

NJVMJB41CT4G by Onsemi

NJVMJB41CT4G

Onsemi

NJVMJB41CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high operating temperature range of -65°C to 150°C. Package style is small outline with gull wing terminals for surface mount assembly.

COLLECTOR

6 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

65 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

3 MHz

2STL2580-AP by STMicroelectronics

2STL2580-AP

STMicroelectronics

2STL2580-AP by STMicroelectronics is a NPN BJT with 1A IC, 60 hFE, and 1.5W Pd. Ideal for power applications, it operates up to 150 °C making it suitable for various electronic designs requiring high current amplification in a single configuration.

1 A

SINGLE

60

1

150 Cel

NPN

1.5 W

Other Transistors

NO

BD135TG by Onsemi

BD135TG

Onsemi

The Onsemi BD135TG is a NPN BJT with max power dissipation of 1.25W, hFE of 40, and IC of 1.5A. Ideal for power applications where a single configuration is needed, operating up to 150 °C.

1.5 A

SINGLE

40

e3

1

150 Cel

NPN

1.25 W

Other Transistors

NO

MATTE TIN

STT13005D-K by STMicroelectronics

STT13005D-K

STMicroelectronics

STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

2 A

400 V

SINGLE WITH BUILT-IN DIODE

8

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

45 W

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3STF1640 by STMicroelectronics

3STF1640

STMicroelectronics

3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

40 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

TTC3710B by Toshiba

TTC3710B

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 12 A;

ISOLATED

12 A

80 V

SINGLE

40

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

80 MHz

BCP5416QTA by Diodes Incorporated

BCP5416QTA

Diodes Incorporated

Diodes Inc. BCP5416QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 and IATF 16949 standards.

COLLECTOR

1 A

25 pF

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

IGB01N120H2ATMA1 by Infineon Technologies

IGB01N120H2ATMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3.2 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 1200 V;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IGD01N120H2BUMA1 by Infineon Technologies

IGD01N120H2BUMA1

Infineon Technologies

Infineon's IGD01N120H2BUMA1 is a NPN BJT transistor with 1200V VCE, 3.2A IC, and 150°C max operating temp. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

3.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

e3

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IGP01N120H2XKSA1 by Infineon Technologies

IGP01N120H2XKSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.2 A; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Terminal Position: SINGLE;

COLLECTOR

3.2 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BD651-S by Bourns

BD651-S

Bourns

The Bourns BD651-S is a NPN Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.

COLLECTOR

8 A

120 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

APT13005SI-G1 by Diodes Incorporated

APT13005SI-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

3.2 A

450 V

SINGLE

11

TO-251

R-PSIP-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005STF-G1 by Diodes Incorporated

APT13005STF-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 3.2 A; Minimum Operating Temperature: -65 Cel;

ISOLATED

3.2 A

450 V

SINGLE

11

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005SU-G1 by Diodes Incorporated

APT13005SU-G1

Diodes Incorporated

Diodes Inc.'s APT13005SU-G1 is a NPN BJT transistor with max. collector-emitter voltage of 450V, ideal for switching applications. With a max. collector current of 3.2A and transition frequency of 4MHz, it operates b/w -65 to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

3.2 A

450 V

SINGLE

11

TO-126

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

2SB1203S-H by Onsemi

2SB1203S-H

Onsemi

The Onsemi 2SB1203S-H is a NPN BJT transistor with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. With a power dissipation of 20W, it's suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203S-TL-H by Onsemi

2SB1203S-TL-H

Onsemi

The Onsemi 2SB1203S-TL-H is a NPN Power BJT for switching applications. Features include VCEsat of 0.4V, IC of 5A, and hFE of 35. With a max operating temperature of 150°C, it's ideal for high-power switching circuits in various electronic devices.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

2SB1203T-TL-H by Onsemi

2SB1203T-TL-H

Onsemi

Onsemi's 2SB1203T-TL-H is a NPN BJT transistor with VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max operating temp of 150 °C and fT of 180MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers high power dissipation at 20W.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSSO-G2

e6

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1 W

20 W

YES

TIN BISMUTH

GULL WING

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

BCP5610E6327HTSA1 by Infineon Technologies

BCP5610E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5616E6327HTSA1 by Infineon Technologies

BCP5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP947E6327HTSA1 by Infineon Technologies

BDP947E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

45 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP949E6327HTSA1 by Infineon Technologies

BDP949E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

60 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP953E6327HTSA1 by Infineon Technologies

BDP953E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

100 V

SINGLE

15

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

NJVMJD112G by Onsemi

NJVMJD112G

Onsemi

NJVMJD112G by Onsemi is a NPN Darlington BJT with 2A IC, 20W Pd, and hFE of 1000. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Its small outline package makes it suitable for surface mount designs in harsh environments.

2 A

DARLINGTON

1000

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SILICON

25 MHz

BD243CS by Motorola

BD243CS

Motorola

BD243CS by Motorola is a NPN BJT transistor with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications due to its single configuration and through-hole terminals. With a min hFE of 15 and fT of 3MHz, it offers reliable performance in various electronic circuits.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

BDX53CS by Motorola

BDX53CS

Motorola

BDX53CS by Motorola is a NPN Darlington transistor with a min DC current gain of 750 and max collector-emitter voltage of 100V. Ideal for switching applications, it has a max collector current of 8A. This through-hole transistor in plastic/epoxy package is suitable for flange mount installations.

COLLECTOR

8 A

100 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

TIP41CN by Motorola

TIP41CN

Motorola

TIP41CN by Motorola is a NPN power BJT with 100V VCE, 6A IC, and 65W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

COLLECTOR

6 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

SGS112 by STMicroelectronics

SGS112

STMicroelectronics

STMicroelectronics' SGS112 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2.5V and can handle up to 50W power dissipation. With a min hFE of 500, it operates at temperatures up to 150 °C, making it suitable for various electronic devices.

ISOLATED

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2.5 V

NTE2325 by Nte Electronics

NTE2325

Nte Electronics

NTE2325 by Nte Electronics is a NPN BJT transistor with 800V max collector-emitter voltage, 3A max collector current, and 50W max power dissipation. Ideal for switching applications due to its single configuration and high transition frequency of 15MHz. Package style is flange mount with through-hole terminals.

COLLECTOR

3 A

800 V

SINGLE

8

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

50 W

50 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

15 MHz

BUF460AV by STMicroelectronics

BUF460AV

STMicroelectronics

BUF460AV by STMicroelectronics is a NPN BJT transistor with max VCEsat of 2V, IC of 90A, and Pmax of 270W. Ideal for switching applications due to its fast tf of 200ns and high VCEO of 450V. Package style is flange mount with isolated case connection.

ISOLATED

90 A

450 V

SINGLE

200 ns

R-XUFM-X3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

270 W

270 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2 V

BDX53BFP by STMicroelectronics

BDX53BFP

STMicroelectronics

BDX53BFP by STMicroelectronics is a power bipolar junction transistor (BJT) with NPN polarity. It has a max VCEsat of 2V and can handle a max collector current (IC) of 8A. This transistor is commonly used for switching applications.

ISOLATED

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

29 W

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 V

BUL213 by STMicroelectronics

BUL213

STMicroelectronics

BUL213 by STMicroelectronics is a NPN Power BJT with 600V VCE, 3A IC, and 0.9V VCEsat. Ideal for switching applications, it has a max power dissipation of 60W and operates up to 150 °C. The transistor's hFE is 16, making it suitable for various industrial uses.

HIGH RELIABILITY

3 A

600 V

SINGLE

16

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

60 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

6420 ns

.9 V

BUL138 by STMicroelectronics

BUL138

STMicroelectronics

BUL138 by STMicroelectronics is a NPN Power BJT transistor with 400V VCE, 5A IC, and 1V VCEsat. Ideal for switching applications, it has a max power dissipation of 80W and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

HIGH RELIABILITY

5 A

400 V

SINGLE

8

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1500 ns

1 V

BUL416 by STMicroelectronics

BUL416

STMicroelectronics

BUL416 by STMicroelectronics is a NPN power BJT transistor with max VCEsat of 3V, IC of 6A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 85W and operates at up to 150 °C. The package style is flange mount with matte tin terminal finish.

6 A

800 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

110 W

85 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 V

BUL58D by STMicroelectronics

BUL58D

STMicroelectronics

BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.

HIGH RELIABILITY

8 A

450 V

SINGLE WITH BUILT-IN DIODE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

85 W

75 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1980 ns

2 V

BULK128D-B by STMicroelectronics

BULK128D-B

STMicroelectronics

STMicroelectronics BULK128D-B is a NPN Power BJT with VCEsat of 1.5V, IC of 4A, and hFE of 8. Ideal for switching applications, it has a max VCE of 400V and Ptot of 55W in a plastic/epoxy package with matte tin finish.

4 A

400 V

SINGLE WITH BUILT-IN DIODE

8

R-PSIP-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

55 W

55 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

1.5 V

ESM3030DV by STMicroelectronics

ESM3030DV

STMicroelectronics

ESM3030DV by STMicroelectronics is a NPN power bipolar junction transistor (BJT) with a max VCEsat of 2.2V and max collector current (IC) of 100A. It is commonly used for switching applications due to its built-in diode and fast fall time of 600ns.

ISOLATED

100 A

300 V

DARLINGTON WITH BUILT-IN DIODE

600 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

225 W

225 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2.2 V