Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STT13005D-K
STMicroelectronics
STT13005D-K by STMicroelectronics is a NPN BJT with 400V VCE, 2A IC, and 45W Ptot. Ideal for switching applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
2 A
400 V
SINGLE WITH BUILT-IN DIODE
8
TO-126
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NPN
45 W
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
NJVMJD112G
Onsemi
NJVMJD112G by Onsemi is a NPN Darlington BJT with 2A IC, 20W Pd, and hFE of 1000. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Its small outline package makes it suitable for surface mount designs in harsh environments.
DARLINGTON
1000
R-PSSO-G2
2
SMALL OUTLINE
260
20 W
AEC-Q101
YES
Matte Tin (Sn) - annealed
GULL WING
30
25 MHz
SGS112
STMicroelectronics' SGS112 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 2.5V and can handle up to 50W power dissipation. With a min hFE of 500, it operates at temperatures up to 150 °C, making it suitable for various electronic devices.
ISOLATED
100 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
500
e0
50 W
Not Qualified
TIN LEAD
2.5 V
BULT118
STMicroelectronics BULT118 is a NPN Power BJT with 400V VCE, 2A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 45W at 150 °C ambient temp. Package: PLASTIC/EPOXY RECTANGULAR with THROUGH-HOLE terminals in FLANGE MOUNT style.
40 W
4900 ns
1.5 V
BULD118D-1
BULD118D-1 by STMicroelectronics is a NPN Power BJT with 400V VCE, 2A IC, and 20W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150 °C. Package: PLASTIC/EPOXY, RECTANGULAR shape with TIN finish in an IN-LINE style.
HIGH RELIABILITY
TO-251AA
R-PSIP-T3
IN-LINE
TIN
STX112-AP
STX112-AP by STMicroelectronics is a high-performance NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management.
BUILT IN BIAS RESISTANCE RATIO IS 0.0067
TO-92
O-PBCY-W3
ROUND
CYLINDRICAL
1.2 W
WIRE
BOTTOM
STX112
STX112 by STMicroelectronics is a powerful NPN Darlington BJT designed for switching applications. It features a max power dissipation of 1.2W, a collector current of 2A, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in various electronic devices.
O-PBCY-T3
MJD117RLG
MJD117RLG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 2A. It is designed for switching applications and has a min DC current gain of 200 (hFE).
COLLECTOR
200
PNP
STT13005
STT13005 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.
700 V
NOT SPECIFIED
BULT106D
BULT106D by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 230 V, a power dissipation of 32 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
230 V
4
32 W
STT13005D
STT13005D from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 45W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.
BD238S
Fairchild Semiconductor
Fairchild Semiconductor's BD238S is a PNP BJT transistor with 80V VCE, 2A IC, and 25W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. The through-hole package with matte tin finish makes it suitable for various electronic designs.
80 V
25
25 W
3 MHz
KSD401FYTU
KSD401FYTU by Fairchild Semiconductor is a NPN BJT transistor with 150V VCEO, 2A IC, and 25W Ptot. It is commonly used in amplifier applications due to its hFE of 120 and fT of 5MHz. The package style is flange mount with a rectangular shape and through-hole terminals.
150 V
120
AMPLIFIER
5 MHz
MJD112RL
MJD112RL by Onsemi is a NPN BJT with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 20W, hFE of 200, and operates up to 150 °C. Ideal for switching applications due to its high collector current of 2A and max voltage of 100V.
235
TIP111G
TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
TO-220AB
STX117-AP
STX117-AP by STMicroelectronics is a PNP Darlington BJT designed for efficient switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.
TIP112-BP
Micro Commercial Components
TIP112-BP by Micro Commercial Components is a NPN BJT with hFE of 1000, IC of 2A, and VCE of 100V. Ideal for power applications in temperatures up to 150°C, featuring a single terminal configuration in a rectangular package.
10
BUX85G
BUX85G by Onsemi is a NPN power BJT with max. collector-emitter voltage of 450V, max. collector current of 2A, and max. power dissipation of 40W. Ideal for switching applications due to its single configuration and high transition frequency of 4MHz in a rectangular package style suitable for flange mounting.
LEADFORM OPTIONS ARE AVAILABLE
450 V
4 MHz
BD238G
BD238G by Onsemi is a PNP BJT transistor with 80V VCEO, 2A IC, and 25W Ptot. Ideal for amplifier applications, it has hFE of 25, operates b/w -55 to 150 °C, and features a flange mount package style.
TO-225AA
-55 Cel
MJD18002D2T4G
MJD18002D2T4G by Onsemi is a NPN BJT transistor with 450V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. With an hFE of 6 and fT of 13MHz, this transistor operates b/w -65 °C to +150°C.
FREE WHEELING DIODE
6
-65 Cel
Tin (Sn)
40
13 MHz
MJE18002G
MJE18002G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 450V, max. collector current of 2A, and min. DC current gain of 6. It is used for switching applications due to its high power dissipation of 50W and operating temperature up to 150 °C in a flange mount package style.
MJE271G
MJE271G by Onsemi is a PNP power BJT with 100V VCEO, 2A IC, and 15W Ptot. Ideal for high-power applications due to its Darlington configuration and 6MHz fT. Package style is flange mount with through-hole terminals.
1500
TO-225
15 W
6 MHz
TIP112G
TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.
TIP115G
TIP115G by Onsemi is a PNP power BJT with 50W max power dissipation, hFE of 500, and 60V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
60 V
BD234G
BD234G by Onsemi is a PNP BJT transistor with 45V VCEO, 2A IC, and 25W power dissipation. Ideal for amplifier applications, it has a hFE of 25 and operates up to 150°C. The package style is flange mount with a rectangular shape and matte tin finish in a through-hole terminal form.
45 V
NJD2873RL
NJD2873RL by Onsemi is a NPN BJT transistor with 50V VCEO, 2A IC, and 15W Ptot. Ideal for amplifier applications, it has hFE of 40, fT of 65MHz, and operates up to 175 °C. This Gull Wing package with tin lead finish is surface mountable and features a small outline design.
50 V
175 Cel
65 MHz
FZT692BQTA
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;
12 pF
150
R-PDSO-G4
3 W
AEC-Q101; IATF 16949
DUAL
150 MHz
.5 V
ZXTP19100CZQTA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 142 MHz; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSSO-F3;
20
R-PSSO-F3
FLAT
142 MHz
FZT600BQTA
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;
15 pF
140 V
5000
250 MHz
1.2 V
2SC5171,Q(J
Toshiba
2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.
180 V
50
200 MHz
PHPT61002NYCLHX
Nexperia
PHPT61002NYCLHX by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 20, and IC of 2A. With a max operating temperature of 175°C, it is ideal for high-power dissipation in small outline packages.
11 pF
MO-235
R-PSSO-G4
IEC-60134
140 MHz
.3 V
TIP112PBFREE
Central Semiconductor
TIP112PBFREE by Central Semiconductor is a NPN Darlington BJT with 2.5V VCEsat, 50W power dissipation, and 100V VCEO. Ideal for amplifier applications, it has a hFE of 500 and operates b/w -65 to 150 °C. Package style is flange mount with matte tin over nickel finish in a rectangular shape with through-hole terminals.
100 pF
MATTE TIN OVER NICKEL
TIP112TIN/LEAD
TIP112TIN/LEAD by Central Semiconductor is a NPN Darlington BJT with max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a max power dissipation of 50W in a plastic package style.
NSV60200DMTWTBG
NSV60200DMTWTBG by Onsemi is a PNP BJT transistor with VCEsat of 0.45V, hFE of 40, and IC of 2A. Ideal for switching applications, it has a max operating temp of 150 °C and collector-emitter voltage of 60V. Suitable for surface mount with small outline package style.
18 pF
SEPARATE, 2 ELEMENTS
S-PDSO-N6
SQUARE
1.8 W
2.27 W
NO LEAD
155 MHz
.45 V
FZT705QTA
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;
120 V
2000
AEC-Q101; IATF 16949; MIL-STD-202
160 MHz
MJE270TG
MJE270TG by Onsemi is a NPN Darlington BJT with max VCEsat of 3V, hFE of 1500, and IC of 2A. Ideal for power applications, it has a max power dissipation of 15W and operates b/w -65 to 150 °C. Suitable for use in various electronic circuits requiring high current amplification.
1.5 W
3 V
DXTN22040DFG-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 198 MHz; Maximum Power Dissipation (Abs): 2.3 W; Maximum Collector Current (IC): 2 A;
40 V
140
S-PDSO-F8
2.3 W
MIL-STD-202
198 MHz
.6 V
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