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XAM3358ZCEA60

Texas Instruments

XAM3358ZCEA60 by Texas Instruments

XAM3358ZCEA60 by Texas Instruments is a 32-bit microprocessor with integrated cache, operating at speeds up to 26 MHz. It features low power mode and boundary scan capabilities, making it ideal for industrial applications requiring high performance in a compact package. With a wide temperature range of -40 to 105 °C, this CMOS technology processor is suitable for various embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,705 parts In-Stock

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4,705

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Digiode

USA . 1,025 parts In-Stock

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1,025

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 259 parts In-Stock

1+ parts

$11.258

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259

$11.258

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One Stop Electronics

USA . 1,248 parts In-Stock

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$12.000

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$12.000

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Parana Technologies

USA . 633 parts In-Stock

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$13.919

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$14.402

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633

$13.919

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$14.402

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DigiPath Technology Company

USA . 1,964 parts In-Stock

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$15.326

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1,964

$15.326

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ChromeModa Solutions

Germany . 2,847 parts In-Stock

1+ parts

$15.639

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$12.824

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2,847

$15.639

$12.824

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IDEA Electronic Components Group

UK . 2,198 parts In-Stock

1+ parts

$15.639

100+ parts

$14.857

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$14.075

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2,198

$15.639

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$14.075

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Corphita

USA . 2,672 parts In-Stock

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2,672

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Overview

Experience unparalleled performance and reliability with the XAM3358ZCEA60 by Texas Instruments, a cutting-edge microprocessor that exceeds industry standards. Manufactured by the renowned Texas Instruments, this device offers integrated cache and low power mode, making it ideal for a wide range of applications. Whether you're in need of high-speed processing or efficient power consumption, this microprocessor delivers exceptional value and benefits, ensuring your projects run smoothly and efficiently. Upgrade to the XAM3358ZCEA60 today and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the product lightweight and durable, ideal for portable devices.

Integrated Cache: YES

Having integrated cache helps improve the overall performance and speed of the microprocessor.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving space and reducing manufacturing costs.

Maximum Supply Voltage: 1.15 V

The maximum supply voltage of 1.15 V is within safe operating limits, ensuring reliable performance.

Package Shape: SQUARE

The square package shape allows for efficient use of space on a circuit board.

Bit Size: 32

A 32-bit architecture offers faster data processing and handling capabilities.

No. of Terminals: 298

With a high number of terminals, the microprocessor can support a wide range of connections and functionalities.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure mounting onto circuit boards.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures that the microprocessor can withstand harsh environmental conditions and operate reliably in industrial settings.

Peripheral IC Type: MICROPROCESSOR, RISC

Being a RISC microprocessor, it offers high performance and efficiency for computing tasks.

Technical Specifications

Microprocessors XAM3358ZCEA60 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

26 MHz

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B298

JESD-609 Code:

e1

Length:

13 mm

Low Power Mode:

YES

No. of Terminals:

298

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.3 mm

Speed:

600 rpm

Maximum Supply Voltage:

1.15 V

Minimum Supply Voltage:

1.06 V

Nominal Supply Voltage:

1.1 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Width:

13 mm

Peripheral IC Type:

Trade Compliance

XAM3358ZCEA60 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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