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XAM3358ZCEA72

Texas Instruments

XAM3358ZCEA72 by Texas Instruments

XAM3358ZCEA72 by Texas Instruments is a 32-bit microprocessor with integrated cache and low power mode. It operates at a max clock frequency of 26 MHz, suitable for industrial applications requiring high-speed processing in a compact package style. With boundary scan support and CMOS technology, it offers efficient performance at temperatures ranging from -40 to 105 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,685 parts In-Stock

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4,685

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Vyrian

USA . 4,491 parts In-Stock

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4,491

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Distributors (Availability)

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One Stop Electronics

USA . 1,536 parts In-Stock

1+ parts

$7.000

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1,536

$7.000

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AZTECH Wire

Italy . 528 parts In-Stock

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$9.247

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528

$9.247

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Parana Technologies

USA . 936 parts In-Stock

1+ parts

$26.979

100+ parts

$2,505.452

1k+ parts

$24.282

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936

$26.979

$2,505.452

$24.282

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DigiPath Technology Company

USA . 1,694 parts In-Stock

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$29.708

100+ parts

$27.331

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1,694

$29.708

$27.331

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ChromeModa Solutions

Germany . 3,891 parts In-Stock

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$30.314

100+ parts

$24.857

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3,891

$30.314

$24.857

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IDEA Electronic Components Group

UK . 1,014 parts In-Stock

1+ parts

$30.314

100+ parts

$28.798

1k+ parts

$27.283

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1,014

$30.314

$28.798

$27.283

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Corphita

USA . 1,417 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the XAM3358ZCEA72 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch microprocessors like the XAM3358ZCEA72 that are perfect for a wide range of applications. From industrial automation to consumer electronics, this product offers exceptional value with its integrated cache, low power mode, and high clock frequency. Trust Texas Instruments to provide you with cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, suitable for a wide range of applications.

Integrated Cache: YES

Enhances the performance and speed of the microprocessor by storing frequently used data closer to the processor.

Surface Mount: YES

Allows for easy installation on printed circuit boards, saving space and improving overall system efficiency.

Maximum Supply Voltage: 1.15 V

Optimal voltage supply for efficient and reliable operation of the microprocessor.

Package Shape: SQUARE

Compact and uniform shape that facilitates easy handling and installation.

Bit Size: 32

Offers a good balance between processing power and energy efficiency for various tasks and applications.

No. of Terminals: 298

Sufficient number of terminals for connectivity and integration with other components in a system.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Enables a high level of integration, compact design, and efficient signal routing in a small form factor package.

Minimum Supply Voltage: 1.06 V

Allows for reduced power consumption and increased energy efficiency during operation.

Maximum Operating Temperature: 105 °C

Ensures reliable performance in harsh environmental conditions and high temperature applications.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold environments without compromising performance.

Terminal Finish: TIN SILVER COPPER

Provides a reliable and durable finish for the terminals, ensuring long-term connectivity.

Terminal Position: BOTTOM

Facilitates easy and secure connection to the circuit board or socket for efficient signal transfer.

Maximum Seated Height: 1.3 mm

Low profile design for space-saving and compact system integration.

Width: 13 mm

Standard width size for compatibility with various mounting options and configurations.

Boundary Scan: YES

Enables efficient testing and debugging of the microprocessor for improved reliability and performance.

Maximum Clock Frequency: 26 MHz

Offers a good balance between processing speed and power efficiency for a wide range of applications.

Length: 13 mm

Compact and uniform length for easy integration and space-saving in system design.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications that require reliable operation in extreme temperature conditions.

Peripheral IC Type: MICROPROCESSOR, RISC

Designed for efficient and optimized processing of instructions in a Reduced Instruction Set Computing architecture.

Technology: CMOS

Utilizes Complementary Metal-Oxide-Semiconductor technology for low power consumption and high-speed processing.

Terminal Form: BALL

Secure and reliable terminal form for stable connection and signal transmission in the system.

Nominal Supply Voltage: 1.1 V

Optimal voltage supply for efficient performance and energy-saving capabilities.

Terminal Pitch: 0.65 mm

Fine pitch design for compact layout and efficient signal routing in the system layout.

Format: FIXED POINT

Suitable for applications that require precise calculations and fixed-point arithmetic operations.

Speed: 720 rpm

Capable of operating at high speeds for quick data processing and efficient task execution.

Low Power Mode: YES

Offers energy-saving features and low power consumption options for improved efficiency and longer battery life in portable devices.

Technical Specifications

Microprocessors XAM3358ZCEA72 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

26 MHz

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B298

JESD-609 Code:

e1

Length:

13 mm

Low Power Mode:

YES

No. of Terminals:

298

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.3 mm

Speed:

720 rpm

Maximum Supply Voltage:

1.15 V

Minimum Supply Voltage:

1.06 V

Nominal Supply Voltage:

1.1 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Width:

13 mm

Peripheral IC Type:

Trade Compliance

XAM3358ZCEA72 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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