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XAM3358ZCE27

Texas Instruments

XAM3358ZCE27 by Texas Instruments

MICROPROCESSOR, RISC; Temperature Grade: OTHER; Terminal Form: BALL; No. of Terminals: 298; Package Code: LFBGA; Package Shape: SQUARE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,140 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,140

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Digiode

USA . 3,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,145

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 870 parts In-Stock

1+ parts

$12.804

100+ parts

-

1k+ parts

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10k+ parts

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870

$12.804

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Parana Technologies

USA . 1,794 parts In-Stock

1+ parts

$18.639

100+ parts

-

1k+ parts

$18.734

10k+ parts

-

1,794

$18.639

-

$18.734

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DigiPath Technology Company

USA . 2,197 parts In-Stock

1+ parts

$20.524

100+ parts

$18.882

1k+ parts

-

10k+ parts

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2,197

$20.524

$18.882

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ChromeModa Solutions

Germany . 1,449 parts In-Stock

1+ parts

$20.943

100+ parts

$17.173

1k+ parts

-

10k+ parts

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1,449

$20.943

$17.173

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IDEA Electronic Components Group

UK . 864 parts In-Stock

1+ parts

$20.943

100+ parts

$19.896

1k+ parts

$18.849

10k+ parts

-

864

$20.943

$19.896

$18.849

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One Stop Electronics

USA . 927 parts In-Stock

1+ parts

$22.000

100+ parts

-

1k+ parts

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10k+ parts

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927

$22.000

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Corphita

USA . 4,159 parts In-Stock

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4,159

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Technical Specifications

Microprocessors XAM3358ZCE27 attributes and parameters. Explore more Microprocessors devices from Texas Instruments

Specs

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

26 MHz

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B298

JESD-609 Code:

e1

Length:

13 mm

Low Power Mode:

YES

No. of Terminals:

298

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.3 mm

Speed:

275 rpm

Maximum Supply Voltage:

1.15 V

Minimum Supply Voltage:

1.06 V

Nominal Supply Voltage:

1.1 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Width:

13 mm

Peripheral IC Type:

Trade Compliance

XAM3358ZCE27 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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