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TNETV2665FIDZWT7

Texas Instruments

TNETV2665FIDZWT7 by Texas Instruments

TNETV2665FIDZWT7 by Texas Instruments is a 32-bit DSP with 13-bit address bus, operating at max 30 MHz. Ideal for digital signal processing applications, it features low power mode, CMOS technology, and a compact grid array package with 361 terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,616 parts In-Stock

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Digiode

USA . 1,511 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 501 parts In-Stock

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$13.894

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$23.871

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$23.632

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$22.677

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One Stop Electronics

USA . 945 parts In-Stock

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$26.000

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Corohmni

South Africa . 5,232 parts In-Stock

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Parana Technologies

USA . 1,715 parts In-Stock

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$56.320

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DigiPath Technology Company

USA . 318 parts In-Stock

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$62.015

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ChromeModa Solutions

Germany . 6,226 parts In-Stock

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$63.281

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$51.890

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IDEA Electronic Components Group

UK . 670 parts In-Stock

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$63.281

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$60.117

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$56.953

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QUARKTWIN TECHNOLOGY LTD

USA . 13,352 parts In-Stock

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Corphita

USA . 4,362 parts In-Stock

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Overview

Elevate your digital signal processing capabilities with the TNETV2665FIDZWT7 by Texas Instruments. Manufactured by a trusted industry leader, this DSP offers unparalleled quality and reliability. Ideal for a wide range of applications, this product delivers exceptional performance and efficiency. With its advanced features and cutting-edge technology, customers can expect superior value and benefits. Experience the advantage of seamless integration and high-speed processing with the TNETV2665FIDZWT7. Unlock new possibilities and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for portable applications.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly of the product onto circuit boards.

Maximum Supply Voltage: 1.26 V

A high maximum supply voltage ensures compatibility with various power sources without risking damage.

Address Bus Width: 13

A wide address bus allows for accessing a larger memory space, enhancing the product's capability for complex signal processing tasks.

Package Shape: SQUARE

The square shape of the package provides efficient use of space on the circuit board.

No. of Terminals: 361

Having a high number of terminals enables connectivity with a wide range of external components for versatile applications.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides good conductivity and corrosion resistance for reliable performance.

Maximum Operating Temperature: 90 °C

The high maximum operating temperature ensures the product can function reliably even in demanding environmental conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature allows the product to function in a wide range of temperature environments.

Width: 16 mm

The compact width of the product is suitable for space-constrained applications.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

The specific peripheral IC type indicates that the product is designed for efficient digital signal processing tasks.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making the product energy efficient.

Format: FIXED POINT

Fixed point format allows for fast and efficient computations, making the product suitable for real-time signal processing applications.

Technical Specifications

Digital Signal Processors (DSPs) TNETV2665FIDZWT7 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

13

Barrel Shifter:

NO

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B361

JESD-609 Code:

e1

Length:

16 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

361

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Trade Compliance

TNETV2665FIDZWT7 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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