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TNETV2665ZWT4

Texas Instruments

TNETV2665ZWT4 by Texas Instruments

TNETV2665ZWT4 by Texas Instruments is a 32-bit DSP with 13-bit address bus width, operating at max 30 MHz clock frequency. Ideal for digital signal processing applications, it features low power mode, CMOS technology, and a package style of grid array with 361 terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,562 parts In-Stock

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8,562

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Digiode

USA . 1,785 parts In-Stock

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1,785

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Distributors (Availability)

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AZTECH Wire

Italy . 216 parts In-Stock

1+ parts

$18.741

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216

$18.741

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One Stop Electronics

USA . 1,347 parts In-Stock

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$27.000

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$27.000

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Parana Technologies

USA . 961 parts In-Stock

1+ parts

$63.332

100+ parts

$5,881.374

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$56.999

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961

$63.332

$5,881.374

$56.999

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DigiPath Technology Company

USA . 1,645 parts In-Stock

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$69.737

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1,645

$69.737

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Corohmni

South Africa . 125 parts In-Stock

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$70.625

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125

$70.625

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ChromeModa Solutions

Germany . 6,972 parts In-Stock

1+ parts

$71.160

100+ parts

$58.351

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6,972

$71.160

$58.351

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IDEA Electronic Components Group

UK . 2,207 parts In-Stock

1+ parts

$71.160

100+ parts

$67.602

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$64.044

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2,207

$71.160

$67.602

$64.044

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QUARKTWIN TECHNOLOGY LTD

USA . 6,090 parts In-Stock

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6,090

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Corphita

USA . 4,454 parts In-Stock

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Overview

Experience unparalleled efficiency and performance with the TNETV2665ZWT4 by Texas Instruments, a leading manufacturer in digital signal processors. This cutting-edge product is designed to optimize various applications in industries such as telecommunications, automotive, and consumer electronics. With a focus on quality and innovation, Texas Instruments delivers a product that not only meets but exceeds customer expectations. Elevate your projects with the TNETV2665ZWT4 and unlock a world of possibilities with its advanced features and superior reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Surface mount technology allows for efficient and compact PCB design.

Maximum Supply Voltage: 1.26 V

Operates within a safe voltage range ensuring stability and reliability.

Address Bus Width: 13

The wide address bus width allows for complex memory addressing capabilities.

Package Shape: SQUARE

Square package shape facilitates easy PCB layout and space optimization.

No. of Terminals: 361

High number of terminals enable connectivity to various external components and peripherals.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Grid array package style with low profile and fine pitch enhances electrical performance and thermal characteristics.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage ensures efficient power consumption and extends battery life.

Maximum Operating Temperature: 90 °C

High maximum operating temperature allows for reliable performance in challenging environments.

Minimum Operating Temperature: 0 °C

Wide operating temperature range ensures the product can function in diverse temperature conditions.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and assembly process.

Maximum Seated Height: 1.4 mm

Low maximum seated height allows for compact and slim device designs.

Width: 16 mm

Compact width dimension enables the product to fit into space-constrained applications.

Boundary Scan: YES

Boundary scan feature facilitates debugging, testing, and programming of the device.

External Data Bus Width: 32

Wide external data bus width enables high-speed data transfer and processing.

Maximum Clock Frequency: 30 MHz

High maximum clock frequency allows for rapid data processing and real-time operation.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures component reliability during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature withstands the thermal stress of soldering without damage.

Internal Bus Architecture: MULTIPLE

Multiple internal bus architecture enhances data flow and processing efficiency.

Length: 16 mm

Compact length dimension complements the slim design of the product.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

Diverse peripheral IC type expands connectivity and functionality options for the product.

Technology: CMOS

CMOS technology ensures low power consumption and high integration capabilities.

Terminal Form: BALL

Ball terminal form simplifies the mounting process and enhances electrical connections.

Nominal Supply Voltage: 1.2 V

Stable nominal supply voltage ensures consistent performance and power efficiency.

Terminal Pitch: 0.8 mm

Narrow terminal pitch allows for high-density mounting and interconnection.

Format: FIXED POINT

Fixed-point format simplifies arithmetic operations and enhances processing speed.

Moisture Sensitivity Level (MSL): 3

Moisture sensitivity level 3 indicates the device is robust against moisture exposure during handling and storage.

Low Power Mode: YES

Inclusion of low power mode enhances energy efficiency and extends battery life.

Technical Specifications

Digital Signal Processors (DSPs) TNETV2665ZWT4 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

13

Barrel Shifter:

NO

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B361

JESD-609 Code:

e1

Length:

16 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

361

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Trade Compliance

TNETV2665ZWT4 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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