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TNETV2665FIBZWT4

Texas Instruments

TNETV2665FIBZWT4 by Texas Instruments

TNETV2665FIBZWT4 by Texas Instruments is a DSP with 32-bit external data bus, 30 MHz clock frequency, and 1.2 V nominal voltage. Ideal for applications requiring low power mode, it features a grid array package style and operates b/w 0-90°C temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,432 parts In-Stock

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5,432

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Digiode

USA . 4,338 parts In-Stock

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4,338

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 373 parts In-Stock

1+ parts

$12.419

100+ parts

-

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373

$12.419

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One Stop Electronics

USA . 591 parts In-Stock

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$16.000

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591

$16.000

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Advanced Electronics

New Zealand . 67 parts In-Stock

1+ parts

$35.573

100+ parts

$32.371

1k+ parts

$29.170

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67

$35.573

$32.371

$29.170

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Corohmni

South Africa . 2,361 parts In-Stock

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$60.942

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2,361

$60.942

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Parana Technologies

USA . 2,312 parts In-Stock

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$63.613

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2,312

$63.613

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ChromeModa Solutions

Germany . 4,815 parts In-Stock

1+ parts

$71.475

100+ parts

$58.610

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4,815

$71.475

$58.610

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IDEA Electronic Components Group

UK . 564 parts In-Stock

1+ parts

$71.475

100+ parts

$67.901

1k+ parts

$64.328

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564

$71.475

$67.901

$64.328

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Corphita

USA . 3,013 parts In-Stock

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3,013

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DigiPath Technology Company

USA . 1,190 parts In-Stock

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$64.442

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1,190

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$64.442

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Overview

Experience unparalleled performance and efficiency with the TNETV2665FIBZWT4 by Texas Instruments, a leading manufacturer in the industry of Digital Signal Processors. This cutting-edge technology opens up a world of possibilities in various applications, from telecommunications to industrial automation. With its advanced features and reliable design, this DSP offers unmatched value and benefits to customers seeking high-quality solutions for their projects. Trust Texas Instruments to deliver excellence with the TNETV2665FIBZWT4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the DSP, making it suitable for various applications and environments.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost during manufacturing.

Maximum Supply Voltage: 1.26 V

The high maximum supply voltage allows for flexibility in power requirements and supports various system configurations.

External Data Bus Width: 32

With a wide data bus width, the DSP can efficiently process a large amount of data at high speeds, enhancing overall performance.

Maximum Clock Frequency: 30 MHz

The high clock frequency enables fast processing and real-time operation, making the DSP suitable for demanding applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with different voltage levels, making the DSP energy-efficient and versatile.

Technical Specifications

Digital Signal Processors (DSPs) TNETV2665FIBZWT4 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

13

Barrel Shifter:

NO

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B361

JESD-609 Code:

e1

Length:

16 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

361

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Trade Compliance

TNETV2665FIBZWT4 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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