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TNETV2665FIDZWT6

Texas Instruments

TNETV2665FIDZWT6 by Texas Instruments

TNETV2665FIDZWT6 by Texas Instruments is a 32-bit DSP with 13-bit address bus width, operating at max 30 MHz clock frequency. Ideal for digital signal processing applications due to its low power mode, CMOS technology, and fixed-point format.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,740 parts In-Stock

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4,740

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Digiode

USA . 874 parts In-Stock

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874

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Distributors (Availability)

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One Stop Electronics

USA . 341 parts In-Stock

1+ parts

$1.000

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341

$1.000

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AZTECH Wire

Italy . 387 parts In-Stock

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$15.517

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387

$15.517

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Parana Technologies

USA . 46 parts In-Stock

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$23.213

100+ parts

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$23.847

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46

$23.213

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$23.847

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ChromeModa Solutions

Germany . 4,444 parts In-Stock

1+ parts

$26.082

100+ parts

$21.387

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4,444

$26.082

$21.387

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IDEA Electronic Components Group

UK . 1,009 parts In-Stock

1+ parts

$26.082

100+ parts

$24.778

1k+ parts

$23.474

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1,009

$26.082

$24.778

$23.474

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Corohmni

South Africa . 212 parts In-Stock

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$60.666

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212

$60.666

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Corphita

USA . 3,830 parts In-Stock

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3,830

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DigiPath Technology Company

USA . 1,923 parts In-Stock

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$23.516

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1,923

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$23.516

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Overview

Experience unparalleled performance and reliability with the TNETV2665FIDZWT6 by Texas Instruments, a leading manufacturer in the industry. This Digital Signal Processor (DSP) offers cutting-edge technology for a wide range of applications, ensuring seamless operation and superior functionality. With a package style that is both low profile and fine pitch, this product provides exceptional value to customers looking for high-quality solutions. Trust Texas Instruments to deliver innovation and excellence in every product, setting new standards for performance and efficiency. Elevate your projects with the TNETV2665FIDZWT6 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and resistant to damage.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into various electronic systems.

Maximum Supply Voltage: 1.26 V

Operates efficiently within a low maximum supply voltage, potentially saving power and reducing heat generation.

Address Bus Width: 13

With a wide address bus width, the processor can access a large memory address space for efficient data processing.

Package Shape: SQUARE

The square package shape offers optimal space utilization and simplifies the layout during PCB design.

No. of Terminals: 361

Having a high number of terminals allows for a greater connectivity options and functionality in the system.

Maximum Operating Temperature: 90 °C

With a high maximum operating temperature, the processor can withstand and perform reliably in harsh environmental conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures the processor can operate effectively in a wide range of temperature environments.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high noise immunity, making it an energy-efficient choice.

Low Power Mode: YES

The availability of low power mode helps optimize energy efficiency and prolong battery life in portable devices.

Technical Specifications

Digital Signal Processors (DSPs) TNETV2665FIDZWT6 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

13

Barrel Shifter:

NO

Boundary Scan:

YES

Maximum Clock Frequency:

30 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B361

JESD-609 Code:

e1

Length:

16 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

361

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Trade Compliance

TNETV2665FIDZWT6 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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