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TM124BBK32-80

Texas Instruments

TM124BBK32-80 by Texas Instruments

TM124BBK32-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in asynchronous mode with a max access time of 80 ns. Ideal for applications requiring fast page access and common I/O type in microelectronic assemblies.

Median Price

$31.376

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 63 parts In-Stock

1+ parts

-

100+ parts

$27.890

1k+ parts

$24.960

10k+ parts

$23.490

63

-

$27.890

$24.960

$23.490

DigiKey

USA . 63 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

63

-

-

-

-

Verical

USA . 63 parts In-Stock

1+ parts

-

100+ parts

$34.862

1k+ parts

$31.200

10k+ parts

$29.363

63

-

$34.862

$31.200

$29.363

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,020 parts In-Stock

1+ parts

$29.440

100+ parts

-

1k+ parts

-

10k+ parts

-

4,020

$29.440

-

-

-

Vyrian

USA . 4,534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,534

-

-

-

-

DigiKey Marketplace

USA . 63 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

63

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 905 parts In-Stock

1+ parts

$3.137

100+ parts

$291.341

1k+ parts

$2.824

10k+ parts

-

905

$3.137

$291.341

$2.824

-

DigiPath Technology Company

USA . 1,683 parts In-Stock

1+ parts

$3.454

100+ parts

$3.178

1k+ parts

-

10k+ parts

-

1,683

$3.454

$3.178

-

-

ChromeModa Solutions

Germany . 3,551 parts In-Stock

1+ parts

$3.525

100+ parts

$2.890

1k+ parts

-

10k+ parts

-

3,551

$3.525

$2.890

-

-

IDEA Electronic Components Group

UK . 1,092 parts In-Stock

1+ parts

$3.525

100+ parts

-

1k+ parts

$3.172

10k+ parts

-

1,092

$3.525

-

$3.172

-

Corphita

USA . 2,002 parts In-Stock

1+ parts

$27.891

100+ parts

-

1k+ parts

-

10k+ parts

-

2,002

$27.891

-

-

-

Microchip USA

USA . 2,943 parts In-Stock

1+ parts

$68.400

100+ parts

$67.210

1k+ parts

$66.620

10k+ parts

$66.020

2,943

$68.400

$67.210

$66.620

$66.020

QUARKTWIN TECHNOLOGY LTD

USA . 2,961 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,961

-

-

-

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Overview

Experience lightning-fast data processing with the TM124BBK32-80 by Texas Instruments, a top-of-the-line DRAM module designed for unparalleled performance. Manufactured by industry leader Texas Instruments, this rectangular microelectronic assembly boasts a 1MX32 organization and 3-STATE output characteristics to handle even the most demanding applications with ease. With a nominal supply voltage of 5V and maximum access time of just 80 ns, this FAST PAGE DRAM MODULE ensures seamless operation and superior reliability. Elevate your projects to new heights with the TM124BBK32-80 and unlock a world of possibilities.

Feature Benefit Bullets

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and installation in various electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing and data transfer, allowing for efficient use in different applications.

Input/Output Type: COMMON

Common input/output type simplifies interfacing with other components and systems.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures reliable performance and compatibility with standard power sources.

Power Supplies (V): 5

Consistent power supply at 5V supports optimal functioning of the DRAM module.

No. of Terminals: 72

High number of terminals enable secure connections and efficient data transfer within the module.

Package Style (Meter): MICROELECTRONIC ASSEMBLY

Microelectronic assembly package style offers compact size, making it suitable for space-constrained applications.

Maximum Operating Temperature: 70 °C

High maximum operating temperature of 70°C ensures reliability and stability even in demanding environments.

Organization: 1MX32

1MX32 organization provides a large memory capacity for storing data efficiently.

Output Characteristics: 3-STATE

3-STATE output allows for high speed and efficient data transmission within the DRAM module.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature of 0°C ensures reliable performance even in cold conditions.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces potential points of failure in the connection.

Maximum Seated Height: 25.527 mm

Low maximum seated height enables compact system design and efficient use of space.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage of 4.5V supports energy efficiency and optimal power consumption.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures compatibility with standard operating conditions in commercial applications.

Access Mode: FAST PAGE

Fast page access mode allows for quick retrieval and processing of data, enhancing overall performance.

Technology: CMOS

CMOS technology offers low power consumption, high speed operation, and reliability in data storage and retrieval.

Terminal Form: NO LEAD

No-lead terminal form reduces the risk of solder joint failures and improves overall durability.

Maximum Supply Current: 640 mA

A maximum supply current of 640mA supports stable and efficient operation of the DRAM module.

No. of Words: 1048576 words

Large number of words enables extensive data storage capacity for diverse applications.

Memory Width: 32

Memory width of 32 bits allows for simultaneous processing of data, enhancing overall performance.

Terminal Pitch: 1.27 mm

Terminal pitch of 1.27mm ensures secure connections and efficient data transfer within the module.

No. of Words Code: 1M

1M words code indicates a high memory capacity, suitable for demanding data storage requirements.

Maximum Supply Voltage (Vsup): 5.5 V

Maximum supply voltage of 5.5V supports stable and reliable performance within the specified voltage range.

Memory Density: 33554432 bit

High memory density of 33554432 bits provides ample storage space for a wide range of data-intensive applications.

Memory IC Type: FAST PAGE DRAM MODULE

Fast page DRAM module offers quick access to data and efficient processing capabilities for enhanced system performance.

Maximum Standby Current: 0.008 Amp

Low maximum standby current of 0.008 Amp supports energy efficiency and reduces power consumption during idle periods.

Refresh Cycles: 1024

1024 refresh cycles ensure data integrity and reliability over extended periods of use.

Maximum Access Time: 80 ns

Fast maximum access time of 80ns enables quick data retrieval and processing for seamless performance.

Technical Specifications

DRAM TM124BBK32-80 attributes and parameters. Explore more DRAM devices from Texas Instruments

Specs

Access Mode:

FAST PAGE

Maximum Access Time:

80 ns

Additional Features:

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Input/Output Type:

COMMON

JESD-30 Code:

R-XSMA-N72

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

32

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

72

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX32

Output Characteristics:

3-STATE

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SSIM72

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Power Supplies (V):

5

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

25.527 mm

Self Refresh:

NO

Maximum Standby Current:

.008 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

640 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

SINGLE

Trade Compliance

TM124BBK32-80 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.02

SB

8542.32.00.15

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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