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TIC106F

Texas Instruments

TIC106F by Texas Instruments

TIC106F by Texas Instruments is a Single SCR with max. DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 30A, and Max. On-state Current of 5A. It is used in applications requiring high current switching capabilities such as motor control systems and power supplies due to its robust design and temperature range from -45°C to 155°C.

Median Price

$3.850

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 10 parts In-Stock

1+ parts

$3.850

100+ parts

$2.880

1k+ parts

$2.500

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10

$3.850

$2.880

$2.500

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Vyrian

USA . 5,469 parts In-Stock

1+ parts

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5,469

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Digiode

USA . 2,808 parts In-Stock

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2,808

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Corel Iberica Componentes, S.L.

Spain . 51 parts In-Stock

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51

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R&J Components

USA . 27 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,197 parts In-Stock

1+ parts

$4.076

100+ parts

-

1k+ parts

$4.538

10k+ parts

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1,197

$4.076

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$4.538

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DigiPath Technology Company

USA . 1,873 parts In-Stock

1+ parts

$4.488

100+ parts

$4.129

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1,873

$4.488

$4.129

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ChromeModa Solutions

Germany . 4,240 parts In-Stock

1+ parts

$4.580

100+ parts

$3.756

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4,240

$4.580

$3.756

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IDEA Electronic Components Group

UK . 1,730 parts In-Stock

1+ parts

$4.580

100+ parts

-

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$4.122

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1,730

$4.580

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$4.122

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AZTECH Wire

Italy . 758 parts In-Stock

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$19.382

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One Stop Electronics

USA . 630 parts In-Stock

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$27.100

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630

$27.100

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Corphita

USA . 3,789 parts In-Stock

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3,789

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Assy Fe

Spain . 51 parts In-Stock

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Overview

Unleash the power of the TIC106F by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier that guarantees quality and reliability. Manufactured by industry leader Texas Instruments, this SCR boasts a range of applications from industrial to consumer electronics. Offering a maximum on-state current of 5A and a non-repetitive peak on-state current of 30A, this product provides exceptional value and performance. Whether you're looking for efficiency or durability, the TIC106F has you covered. Upgrade your electronics with this versatile and high-quality component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and resistance to environmental factors, making the product suitable for a variety of applications.

Maximum DC Gate Trigger Current: 0.2 mA

The low DC gate trigger current requirement ensures efficient and effective triggering, contributing to the overall performance and reliability of the SCR.

Configuration: SINGLE

The single configuration simplifies the installation and operation of the SCR, making it easier for users to integrate into their systems.

Repetitive Peak On-state Current: 30 A

The high repetitive peak on-state current capability makes the SCR suitable for handling high current loads, making it a versatile component for power control applications.

Maximum On-state Current: 5 A

With a maximum on-state current of 5 A, this SCR can effectively control moderate current levels, providing flexibility in various circuit designs.

Maximum Leakage Current: 1 mA

The low maximum leakage current ensures minimal power loss when the SCR is in the off-state, contributing to energy-efficient operation.

Repetitive Peak Reverse Voltage: 50 V

The repetitive peak reverse voltage rating of 50 V allows the SCR to safely handle reverse voltage conditions, enhancing its reliability and longevity.

Maximum Operating Temperature: 155 °C

The high maximum operating temperature of 155°C ensures the SCR can withstand elevated temperatures, making it suitable for demanding industrial environments.

Minimum Operating Temperature: -45 °C

The low minimum operating temperature of -45°C enables the SCR to operate effectively in cold conditions, expanding its range of potential applications.

Maximum RMS On-state Current: 5 A

The maximum RMS on-state current rating of 5 A ensures reliable performance under AC load conditions, making the SCR suitable for a wide range of power control applications.

Maximum DC Gate Trigger Voltage: 1 V

The low DC gate trigger voltage requirement of 1 V enables efficient and accurate triggering of the SCR, contributing to precise control in electronic circuits.

Repetitive Peak Off-state Voltage: 50 V

The repetitive peak off-state voltage rating of 50 V allows the SCR to safely block off-state voltages, ensuring reliable operation in various circuit configurations.

Maximum Holding Current: 5 mA

The maximum holding current of 5 mA ensures the SCR remains in the on-state even in the presence of low current levels, enhancing system stability and performance.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC106F attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

5 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC106F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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