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TIC106N

Texas Instruments

TIC106N by Texas Instruments

TIC106N by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 3.2A, trigger voltage of 1.2V, and off-state voltage of 800V. It is used in power control applications due to its high non-repetitive peak current capability and wide operating temperature range from -40°C to 125°C.

Median Price

$3.425

Lifecycle Status

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10

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Distrelec

Netherlands . 381 parts In-Stock

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Digiode

USA . 4,597 parts In-Stock

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Vyrian

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ECAB

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LittleDiode

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Pegasus Components GmbH

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ICP Electronique

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Parana Technologies

USA . 1,877 parts In-Stock

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Corphita

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ChromeModa Solutions

Germany . 4,461 parts In-Stock

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IDEA Electronic Components Group

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DigiPath Technology Company

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A-Z Elektronik GmbH

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Overview

Discover the power of the TIC106N by Texas Instruments, a top-quality Silicon Controlled Rectifier that offers superior performance and reliability. Manufactured by industry-leader Texas Instruments, this SCR is perfect for a wide range of applications. From motor control to lighting systems, the TIC106N provides exceptional value with its efficient design and high durability. Trust in Texas Instruments for your semiconductor needs and experience the benefits of cutting-edge technology in every component.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient and reliable switching of the SCR.

Non Repetitive Peak On-state Current: 30 A

Ability to handle high peak currents makes it suitable for applications requiring high power handling capabilities.

Maximum On-state Current: 3.2 A

Ideal for medium power applications where a moderate current carrying capacity is required.

Maximum Leakage Current: 0.4 mA

Low leakage current ensures minimal power loss when the SCR is in the off state.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for use in a variety of environmental conditions.

Trigger Device Type: SCR

SCRs are known for their high reliability and ruggedness, making them a popular choice for industrial applications.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage rating enables the SCR to withstand high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

Fast rate of rise of off-state voltage ensures quick turn-off of the SCR, reducing switching losses.

Maximum Holding Current: 8 mA

Ability to maintain holding current ensures stable operation of the SCR in off state.

Nominal Circuit Commutated Turn-off Time: 7.7 us

Fast turn-off time allows for efficient and precise control of the SCR in switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC106N attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

7.7 us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

8 mA

Maximum Leakage Current:

.4 mA

Non Repetitive Peak On-state Current:

30 A

Maximum On-state Current:

3.2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TIC106N Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-355-5615, 5961013555615

NIIN

013555615

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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