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TIC106Y

Texas Instruments

TIC106Y by Texas Instruments

TIC106Y by Texas Instruments is a single SCR with max. on-state current of 5A, trigger voltage of 1V, and max. DC gate trigger current of 0.2mA. It is used in applications requiring reliable switching at temperatures ranging from -45 to 155°C.

Median Price

$2.744

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ace Electronics

USA . 59 parts In-Stock

1+ parts

$5.000

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59

$5.000

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Vyrian

USA . 4,630 parts In-Stock

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4,630

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Digiode

USA . 2,204 parts In-Stock

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2,204

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Bristol Electronics

USA . 1,280 parts In-Stock

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-

100+ parts

$0.487

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$0.210

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1,280

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$0.487

$0.210

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Microfarads

USA . 1,235 parts In-Stock

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1,235

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R&J Components

USA . 21 parts In-Stock

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Parana Technologies

USA . 74 parts In-Stock

1+ parts

$2.739

100+ parts

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$3.221

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74

$2.739

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$3.221

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DigiPath Technology Company

USA . 1,829 parts In-Stock

1+ parts

$3.015

100+ parts

$2.774

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1,829

$3.015

$2.774

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ChromeModa Solutions

Germany . 3,689 parts In-Stock

1+ parts

$3.077

100+ parts

$2.523

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3,689

$3.077

$2.523

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IDEA Electronic Components Group

UK . 1,219 parts In-Stock

1+ parts

$3.077

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$2.769

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1,219

$3.077

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$2.769

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AZTECH Wire

Italy . 502 parts In-Stock

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$12.856

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502

$12.856

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One Stop Electronics

USA . 327 parts In-Stock

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$20.100

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327

$20.100

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Corphita

USA . 1,743 parts In-Stock

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Overview

Unleash the power of the TIC106Y by Texas Instruments and experience reliable performance like never before. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Silicon Controlled Rectifiers (SCR) that are perfect for a wide range of applications. With a maximum DC Gate Trigger Current of 0.2 mA and a Non Repetitive Peak On-state Current of 30 A, this SCR offers superior efficiency and durability. Whether you're looking to enhance your electronic projects or improve industrial equipment, the TIC106Y provides unmatched value, benefits, and advantages that will exceed your expectations. Upgrade to the TIC106Y today and elevate your technology game to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliable performance and longevity.

Maximum DC Gate Trigger Current: 0.2 mA

Allows for precise control of when the SCR turns on, leading to efficient and accurate operation.

Configuration: SINGLE

Simplified design with only one SCR in the package for easier integration and troubleshooting.

Non Repetitive Peak On-state Current: 30 A

Capable of handling high current loads for demanding applications.

Maximum On-state Current: 5 A

Suitable for a wide range of electronic devices and equipment that require moderate power handling capabilities.

Maximum Leakage Current: 1 mA

Ensures minimal power loss in standby mode, leading to energy efficiency.

Repetitive Peak Reverse Voltage: 30 V

Provides robust protection against reverse polarity voltages, increasing the reliability of the SCR.

Maximum Operating Temperature: 155 °C

Can operate in high-temperature environments without degradation in performance.

Minimum Operating Temperature: -45 °C

Wide operating temperature range allows for use in both extreme cold and hot conditions.

Maximum RMS On-state Current: 5 A

Supports continuous current flow without overheating, ideal for long-duration applications.

Maximum DC Gate Trigger Voltage: 1 V

Low gate trigger voltage enables efficient control and activation of the SCR with minimal power consumption.

Repetitive Peak Off-state Voltage: 30 V

Ensures reliable performance and protection against voltage surges and spikes in off-state conditions.

Maximum Holding Current: 5 mA

Maintains SCR conduction even after gate trigger current is removed, ensuring stable operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC106Y attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-45 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

5 A

Repetitive Peak Off-state Voltage:

30 V

Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC106Y Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-450-1001, 5961014501001

NIIN

014501001

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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