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TIC106S

Texas Instruments

TIC106S by Texas Instruments

TIC106S by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 3.2A, trigger voltage of 1.2V, and off-state voltage of 700V. Ideal for applications requiring precise gate triggering in circuits with currents up to 30A and voltages up to 700V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,136 parts In-Stock

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Digiode

USA . 3,681 parts In-Stock

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Parana Technologies

USA . 1,254 parts In-Stock

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$3.143

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$3.663

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$3.143

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$3.663

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DigiPath Technology Company

USA . 643 parts In-Stock

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$3.461

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$3.184

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643

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IDEA Electronic Components Group

UK . 1,553 parts In-Stock

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$3.532

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$3.179

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ChromeModa Solutions

Germany . 401 parts In-Stock

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$3.532

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$2.896

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401

$3.532

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AZTECH Wire

Italy . 294 parts In-Stock

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$5.028

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Semicontronic

India . 1,127 parts In-Stock

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$19.100

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$18.622

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$18.527

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One Stop Electronics

USA . 1,537 parts In-Stock

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$30.100

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

USA . 485 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Overview

Enhance your electronic projects with the TIC106S by Texas Instruments, a high-quality Silicon Controlled Rectifier offering unmatched performance and reliability. Manufactured by the industry leader in semiconductor technology, this SCR is ideal for a wide range of applications where precise power control is essential. From motor speed control to lighting systems, the TIC106S provides exceptional value, delivering efficient power management and ensuring optimal performance. Upgrade your projects today with the superior quality and advanced features of the TIC106S.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

This low trigger current requirement makes the product suitable for applications where power consumption needs to be minimized.

Non Repetitive Peak On-state Current: 30 A

The high peak on-state current capability allows the product to handle surges and high current loads effectively.

Maximum On-state Current: 3.2 A

The high on-state current rating makes the product suitable for medium to high power applications.

Maximum Leakage Current: 0.4 mA

The low leakage current ensures minimal power loss when the device is in the off state.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes the product suitable for use in harsh environments where temperature fluctuation is common.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this product offers reliable switching performance with high current handling capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the product to be used in extreme cold conditions without any performance issues.

Maximum DC Gate Trigger Voltage: 1.2 V

The low gate trigger voltage ensures efficient triggering of the device with minimal control voltage input.

Repetitive Peak Off-state Voltage: 700 V

The high off-state voltage rating makes the product suitable for high voltage applications where reliable switching is crucial.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/us

The fast rate of rise of off-state voltage allows the product to respond quickly to changes in the input signal, providing efficient switching performance.

Maximum Holding Current: 8 mA

The high holding current ensures that the device remains in the on-state even in the presence of external disturbances, enhancing overall system reliability.

Nominal Circuit Commutated Turn-off Time: 7.7 us

The fast turn-off time ensures quick response of the device to trigger signals, making it suitable for high-speed switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC106S attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Nominal Circuit Commutated Turn-off Time:

7.7 us

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

8 mA

Maximum Leakage Current:

.4 mA

Non Repetitive Peak On-state Current:

30 A

Maximum On-state Current:

3.2 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

TIC106S Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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