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TIC116A

Texas Instruments

TIC116A by Texas Instruments

TIC116A by Texas Instruments is a single SCR with max. on-state current of 8A and trigger voltage of 1.5V. It has a max. DC gate trigger current of 20mA, ideal for applications requiring high power control in industrial settings at temperatures ranging from -40 to 110°C.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

USA . 7,949 parts In-Stock

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Digiode

USA . 1,938 parts In-Stock

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ECAB

Sweden . 206 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 70 parts In-Stock

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Holdelec - ElecDif-Pro

France . 70 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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Parana Technologies

USA . 850 parts In-Stock

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$4.736

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DigiPath Technology Company

USA . 1,373 parts In-Stock

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$4.368

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ChromeModa Solutions

Germany . 183 parts In-Stock

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IDEA Electronic Components Group

UK . 3 parts In-Stock

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$4.360

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AZTECH Wire

Italy . 436 parts In-Stock

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One Stop Electronics

USA . 830 parts In-Stock

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Corphita

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Assy Fe

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Overview

Enhance your electronic projects with the TIC116A by Texas Instruments, a top-of-the-line Silicon Controlled Rectifier that guarantees quality and reliability. Designed to meet the high standards of its manufacturer, this SCR offers seamless integration in various applications. Its single configuration, maximum on-state current of 8A, and low leakage current of 2mA ensure optimal performance. Perfect for demanding environments, the TIC116A operates efficiently at temperatures ranging from -40°C to 110°C. Invest in this versatile component today and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the component, ensuring durability and reliability.

Maximum DC Gate Trigger Current: 20 mA

Allows for precise control and triggering of the SCR, enhancing its functionality.

Configuration: SINGLE

Simplified design and operation with a single SCR configuration.

Non Repetitive Peak On-state Current: 80 A

Capable of handling high peak currents, suitable for various applications.

Package Shape: RECTANGULAR

Space-efficient design that fits well in circuits.

Terminal Form: THROUGH-HOLE

Easy to mount and solder onto circuit boards.

Maximum On-state Current: 8 A

Can handle moderate continuous current, suitable for many power applications.

Maximum Leakage Current: 2 mA

Low leakage current enhances efficiency and reliability of the SCR.

Repetitive Peak Reverse Voltage: 100 V

Suitable for low to medium voltage applications.

No. of Terminals: 3

Simple connection with three terminals.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and installation in equipment.

Maximum Operating Temperature: 110 °C

Wide operating temperature range for versatility in different environments.

Trigger Device Type: SCR

Specifically designed as a Silicon Controlled Rectifier for reliable performance.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature conditions without issues.

Terminal Position: SINGLE

Simplified wiring and connectivity with a single terminal position.

Maximum RMS On-state Current: 8 A

Suitable for applications requiring low to moderate current handling.

Maximum DC Gate Trigger Voltage: 1.5 V

Low trigger voltage for efficient and precise triggering of the SCR.

Case Connection: ANODE

Easy identification and connection of the SCR's case connection.

Repetitive Peak Off-state Voltage: 100 V

Capable of withstanding off-state voltages up to 100 V.

Minimum Critical Rate of Rise of Off-state Voltage: 100 V/us

Can handle rapid changes in off-state voltage without issues.

Maximum Holding Current: 40 mA

Good holding current for stable operation of the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TIC116A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

100 V/us

Maximum DC Gate Trigger Current:

20 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

40 mA

JESD-30 Code:

R-PSFM-T3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

80 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

8 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TIC116A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-169-6518, 5961011696518

NIIN

011696518

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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