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2N6404G

Onsemi

2N6404G by Onsemi

2N6404G by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 30mA, Non Repetitive Peak On-state Current of 250A, and Max RMS On-state Current of 16A. It is used in applications requiring high current switching such as power control circuits.

Median Price

$1.398

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 218 parts In-Stock

1+ parts

$0.610

100+ parts

$0.600

1k+ parts

$0.590

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-

218

$0.610

$0.600

$0.590

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Farnell

UK . 559 parts In-Stock

1+ parts

$0.615

100+ parts

$0.466

1k+ parts

$0.421

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-

559

$0.615

$0.466

$0.421

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Arrow

USA . 3 parts In-Stock

1+ parts

$1.326

100+ parts

$0.896

1k+ parts

$0.770

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3

$1.326

$0.896

$0.770

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Chip1Stop

Japan . 653 parts In-Stock

1+ parts

$1.470

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653

$1.470

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DigiKey

USA . 1,730 parts In-Stock

1+ parts

$2.350

100+ parts

$1.040

1k+ parts

$0.771

10k+ parts

$0.759

1,730

$2.350

$1.040

$0.771

$0.759

Mouser Electronics

USA . 1,029 parts In-Stock

1+ parts

$2.350

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$1.050

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$0.868

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1,029

$2.350

$1.050

$0.868

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Verical

USA . 53 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 702 parts In-Stock

1+ parts

$0.732

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-

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702

$0.732

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Vyrian

USA . 1,176 parts In-Stock

1+ parts

$0.770

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1,176

$0.770

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VNN

France . 1,749 parts In-Stock

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1,749

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Nova Conductors

Japan . 500 parts In-Stock

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500

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ComSIT Distribution GmbH

Germany . 155 parts In-Stock

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155

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ComSIT USA

USA . 155 parts In-Stock

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155

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Prism Electronics

USA . 113 parts In-Stock

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113

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NAC Semi

USA . 100 parts In-Stock

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$1.360

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100

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$1.360

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PUI

USA . 80 parts In-Stock

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80

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,094 parts In-Stock

1+ parts

$0.650

100+ parts

-

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1,094

$0.650

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Corphita

USA . 2,011 parts In-Stock

1+ parts

$0.693

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2,011

$0.693

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Corohmni

South Africa . 456 parts In-Stock

1+ parts

$0.770

100+ parts

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456

$0.770

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 14,436 parts In-Stock

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14,436

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Kulean Microsystems

USA . 5,038 parts In-Stock

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5,038

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Kepictronics

USA . 4,497 parts In-Stock

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4,497

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Problanco Electronics

Mexico . 4,090 parts In-Stock

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TANS Electronics

Latvia . 3,502 parts In-Stock

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Argo Parts USA

USA . 3,274 parts In-Stock

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Continental Prestige Electronics

USA . 2,672 parts In-Stock

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2,672

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RC Electronics

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.920

1k+ parts

$0.870

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$0.850

2,000

-

$0.920

$0.870

$0.850

Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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SupplyDigital Components

Austria . 1,593 parts In-Stock

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1,593

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Perfect Parts

USA . 1,308 parts In-Stock

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1,308

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UHIMA Technologies

Türkiye . 934 parts In-Stock

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934

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S.R.D Solutions

India . 500 parts In-Stock

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500

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GreenTree Electronics

Israel . 110 parts In-Stock

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110

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Aranea Global

USA . 100 parts In-Stock

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100

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Assy Fe

Spain . 30 parts In-Stock

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30

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Overview

Unleash the power of the 2N6404G Silicon Controlled Rectifier by Onsemi, a reliable and high-quality component that guarantees top-notch performance. Manufactured by Onsemi, a trusted name in the industry, this SCR offers unmatched advantages for a wide range of applications. With a maximum DC Gate Trigger Current of 30 mA and a Non Repetitive Peak On-state Current of 250 A, this product ensures seamless operation and efficiency. Experience the value and benefits of this SCR, from its easy installation with a through-hole terminal form to its superior performance under varying temperatures. Trust the 2N6404G to deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides good insulation and protection for the components inside, ensuring durability and reliability.

Maximum DC Gate Trigger Current: 30 mA

The low gate trigger current requirement allows for efficient and precise control over the SCR, making it suitable for a variety of applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and installation process, making it easier to use in different electrical systems.

Repetitive Peak On-state Current: 250 A

With a high repetitive peak on-state current, this SCR can handle heavy loads and high power applications effectively.

Maximum On-state Current: 16 A

The maximum on-state current rating of 16 A allows for reliable and continuous operation under normal operating conditions.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating of 600 V ensures safe and stable operation in circuits with varying voltage requirements.

Maximum Operating Temperature: 125 °C

The SCR can operate at high temperatures up to 125°C, making it suitable for demanding industrial and automotive applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6404G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

35 us

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

80 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

250 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6404G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-631-9008, 5961016319008

NIIN

016319008

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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