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2N6405

Onsemi

2N6405 by Onsemi

2N6405 by Onsemi is a SCR with 30mA DC Gate Trigger Current, 160A Non Repetitive Peak On-state Current, and 800V Repetitive Peak Reverse Voltage. It is used in applications requiring high current switching such as power supplies and motor control due to its single configuration and through-hole terminal form.

Median Price

$5.445

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 15 parts In-Stock

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$1.540

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$1.150

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$1.000

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$1.540

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American Microsemiconductor Inc.

USA . 4,534 parts In-Stock

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$9.350

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Vyrian

USA . 2,421 parts In-Stock

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Digiode

USA . 1,931 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 345 parts In-Stock

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ComSIT Distribution GmbH

Germany . 225 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 152 parts In-Stock

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M&R Communications

USA . 30 parts In-Stock

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Manotoh

Italy . 14 parts In-Stock

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Resion

USA . 7 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Component Stockers USA

USA . 4,538 parts In-Stock

1+ parts

$1.140

100+ parts

$1.080

1k+ parts

$1.050

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4,538

$1.140

$1.080

$1.050

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$101.866

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$92.698

1k+ parts

$83.530

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3,000

$101.866

$92.698

$83.530

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,902 parts In-Stock

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SupplyDigital Components

Austria . 4,050 parts In-Stock

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Problanco Electronics

Mexico . 3,356 parts In-Stock

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Northwest PG Solutions

USA . 2,036 parts In-Stock

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$4.416

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2,036

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TANS Electronics

Latvia . 1,914 parts In-Stock

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Corphita

USA . 1,573 parts In-Stock

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Kulean Microsystems

USA . 844 parts In-Stock

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Native Components

USA . 407 parts In-Stock

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$4.371

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Corohmni

South Africa . 295 parts In-Stock

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UHIMA Technologies

Türkiye . 72 parts In-Stock

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Assy Fe

Spain . 4 parts In-Stock

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Perfect Parts

USA . 2 parts In-Stock

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Overview

Unlock the power of the Onsemi 2N6405 Silicon Controlled Rectifier (SCR) for your next project. With a reputation for high-quality manufacturing, Onsemi delivers reliable components that meet and exceed industry standards. The 2N6405 is ideal for a wide range of applications, offering customers exceptional value and benefits. Whether you're looking to control power in industrial machinery or regulate voltage in consumer electronics, this SCR provides the performance and reliability you need. Choose the Onsemi 2N6405 for superior quality and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the SCR, making it durable and long-lasting.

Maximum DC Gate Trigger Current: 30 mA

The low gate trigger current allows for efficient and precise control of the SCR.

Configuration: SINGLE

The single configuration simplifies the setup and installation of the SCR.

Non Repetitive Peak On-state Current: 160 A

The high peak current capability ensures the SCR can handle heavy loads without overheating.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into electronic systems.

Terminal Form: THROUGH-HOLE

The through-hole terminals make it easy to solder and connect the SCR to a circuit board.

Maximum On-state Current: 5 A

The high on-state current rating enables the SCR to handle a wide range of applications.

Maximum Leakage Current: 2 mA

The low leakage current ensures minimal power loss and efficient operation of the SCR.

Repetitive Peak Reverse Voltage: 800 V

The high reverse voltage rating provides protection against voltage spikes and surges.

No. of Terminals: 3

The three terminals allow for easy connection and integration of the SCR into a circuit.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting of the SCR in a system.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures the SCR can operate reliably in various environments.

Trigger Device Type: SCR

Being an SCR, the device is known for its reliability and efficiency in controlling power flow.

Minimum Operating Temperature: -40 °C

The low operating temperature ensures the SCR can operate in sub-zero conditions.

Terminal Finish: TIN LEAD

The tin lead finish provides good conductivity and solderability for the SCR terminals.

Terminal Position: SINGLE

The single terminal position simplifies the wiring and installation of the SCR.

Maximum RMS On-state Current: 16 A

The high RMS current rating ensures the SCR can handle continuous current flow without overheating.

Maximum DC Gate Trigger Voltage: 2.5 V

The low gate trigger voltage ensures the SCR can be easily activated with minimal input voltage.

Case Connection: ANODE

The anode connection provides a secure and reliable connection for the SCR in a circuit.

Repetitive Peak Off-state Voltage: 800 V

The high off-state voltage rating ensures the SCR can withstand high voltage levels when turned off.

Maximum Holding Current: 60 mA

The high holding current ensures the SCR remains in the on-state even in the presence of small current fluctuations.

Peak Reflow Temperature °C: 235

The high peak reflow temperature allows for the SCR to withstand the soldering process during assembly.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6405 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

160 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6405 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-097-4353, 5961010974353

NIIN

010974353

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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