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2N6401G

Onsemi

2N6401G by Onsemi

2N6401G by Onsemi is a single SCR with max DC gate trigger current of 30mA, non-repetitive peak on-state current of 160A, and max on-state current of 10A. It is used in applications requiring high power control such as industrial motor drives and power supplies.

Median Price

$0.970

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 972 parts In-Stock

1+ parts

$2.400

100+ parts

$1.070

1k+ parts

$0.788

10k+ parts

$0.780

972

$2.400

$1.070

$0.788

$0.780

Rochester

USA . 712 parts In-Stock

1+ parts

-

100+ parts

$0.779

1k+ parts

$0.647

10k+ parts

$0.577

712

-

$0.779

$0.647

$0.577

DigiKey

USA . 712 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.970

10k+ parts

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712

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$0.970

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Distributors (In-Stock)

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Vyrian

USA . 1,039 parts In-Stock

1+ parts

$0.523

100+ parts

-

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1,039

$0.523

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Digiode

USA . 1,068 parts In-Stock

1+ parts

$0.607

100+ parts

-

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1,068

$0.607

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DigiKey Marketplace

USA . 710 parts In-Stock

1+ parts

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710

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Prism Electronics

USA . 12 parts In-Stock

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12

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Distributors (Availability)

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Native Components

USA . 187 parts In-Stock

1+ parts

$0.400

100+ parts

-

1k+ parts

-

10k+ parts

$0.384

187

$0.400

-

-

$0.384

Corohmni

South Africa . 406 parts In-Stock

1+ parts

$0.523

100+ parts

-

1k+ parts

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406

$0.523

-

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Corphita

USA . 83 parts In-Stock

1+ parts

$0.575

100+ parts

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83

$0.575

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TANS Electronics

Latvia . 6,576 parts In-Stock

1+ parts

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6,576

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A-Z Elektronik GmbH

Germany . 5,765 parts In-Stock

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5,765

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SupplyDigital Components

Austria . 5,693 parts In-Stock

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5,693

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kulean Microsystems

USA . 4,833 parts In-Stock

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4,833

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Problanco Electronics

Mexico . 3,556 parts In-Stock

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3,556

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Perfect Parts

USA . 1,798 parts In-Stock

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1,798

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Continental Prestige Electronics

USA . 710 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.545

10k+ parts

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710

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-

$0.545

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Northwest PG Solutions

USA . 667 parts In-Stock

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667

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Metaverse IC Inc.

Canada . 480 parts In-Stock

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480

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Kepictronics

USA . 295 parts In-Stock

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295

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UHIMA Technologies

Türkiye . 147 parts In-Stock

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147

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Overview

Elevate your electronics with the 2N6401G by Onsemi, a high-quality Silicon Controlled Rectifier that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this SCR is perfect for a wide range of applications. From power supplies to motor control, the 2N6401G provides exceptional value with its efficient design and impressive capabilities. Trust Onsemi to deliver top-notch products that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SCR, ensuring a longer lifespan and better performance.

Maximum DC Gate Trigger Current: 30 mA

Allows for precise control over the switching process, making the SCR suitable for a variety of applications.

Configuration: SINGLE

Simplifies the setup and installation process, making it easier to integrate the SCR into existing systems.

Non Repetitive Peak On-state Current: 160 A

The high current rating allows for handling of heavy loads, making this SCR a reliable choice for high-power applications.

Maximum On-state Current: 10 A

Suitable for medium to high-power applications where stable current flow is required.

Repetitive Peak Reverse Voltage: 100 V

Provides protection against reverse voltage spikes, ensuring reliable performance in various circuit configurations.

Maximum Operating Temperature: 125 °C

Can operate efficiently in a wide range of temperature environments, making it versatile for different applications.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, this device offers precise control and reliable switching capability, suitable for various power control applications.

Terminal Finish: TIN

The TIN finish enhances conductivity and corrosion resistance, ensuring reliable connections for the SCR.

Maximum RMS On-state Current: 16 A

Able to handle moderate to high current levels continuously, making it suitable for steady-state operations.

Maximum DC Gate Trigger Voltage: 2.5 V

Low gate trigger voltage allows for efficient control and triggering of the SCR, enhancing performance in diverse applications.

Repetitive Peak Off-state Voltage: 100 V

Offers robust off-state voltage handling capacity, ensuring reliable performance in various circuit configurations.

Maximum Holding Current: 60 mA

Ensures stable operation and control over extended periods, making the SCR an excellent choice for continuous power applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6401G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

160 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

10 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6401G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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