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2N6401

Onsemi

2N6401 by Onsemi

2N6401 by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 30mA, Non Repetitive Peak On-state Current of 160A, and Max RMS On-state Current of 16A. It is used in applications requiring SCR devices for power control circuits at temperatures ranging from -40 to 125 °C.

Median Price

$0.436

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Rochester

USA . 5,233 parts In-Stock

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$0.436

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Farnell

UK . 5,233 parts In-Stock

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Verical

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Vyrian

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Digiode

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TEDSS.com

USA . 350 parts In-Stock

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R&J Components

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Pegasus Components GmbH

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MRC Electronics

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Legend Electronics Inc.

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Tech-Mark Corp

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PAR Electronics

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LittleDiode

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ICP Electronique

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MISTER SPROCKETS

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Ampacity Inc.

Singapore . 5,202 parts In-Stock

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Corohmni

South Africa . 79 parts In-Stock

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Corphita

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Component Stockers USA

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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Continental Prestige Electronics

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Problanco Electronics

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TANS Electronics

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Northwest PG Solutions

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Kulean Microsystems

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Glotronic Ltd.

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UHIMA Technologies

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Overview

Discover the high-quality 2N6401 SCR by Onsemi, a leading manufacturer in the industry. Ideal for various applications, this product offers unmatched reliability and performance. With a maximum on-state current of 5A and a non-repetitive peak on-state current of 160A, the 2N6401 provides efficient power control in a compact package. Trust Onsemi's expertise and elevate your projects with the value and benefits of the 2N6401 SCR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the SCR, making it durable and reliable.

Maximum DC Gate Trigger Current: 30 mA

Allows for precise control and triggering of the SCR, ensuring safe and efficient operation.

Configuration: SINGLE

Simplified design and installation process, suitable for applications requiring a single SCR.

Non Repetitive Peak On-state Current: 160 A

Capable of handling high current loads for short durations, suitable for heavy-duty industrial applications.

Maximum On-state Current: 5 A

Suitable for medium to high power applications, providing efficient conduction of current.

Repetitive Peak Reverse Voltage: 100 V

Provides reverse voltage protection for the SCR, ensuring reliable operation under varying load conditions.

Maximum RMS On-state Current: 16 A

Sustainable current-carrying capacity for continuous operation, suitable for long-duration applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6401 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

160 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

100 V

Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

2N6401 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-211-9233, 5961012119233, 5961-15-062-8398, 5961150628398

NIIN

012119233, 150628398

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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