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2N6407TG

Onsemi

2N6407TG by Onsemi

2N6407TG by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 75mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 16A. It operates b/w -40 to 125 °C and has a Repetitive Peak Off-state Voltage of 400V. Ideal for power control applications requiring high current handling capabilities.

Median Price

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Lifecycle Status

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Digiode

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Native Components

USA . 401 parts In-Stock

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Northwest PG Solutions

USA . 2,372 parts In-Stock

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Kulean Microsystems

USA . 5,903 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 1,228 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 628 parts In-Stock

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Corohmni

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Overview

Unlock the power of your electronics with the Onsemi 2N6407TG Silicon Controlled Rectifier (SCR). Manufactured by Onsemi, a trusted name in semiconductor technology, this SCR offers high performance and reliability for a wide range of applications. From motor control to lighting systems, the 2N6407TG provides efficient and precise current control, ensuring optimal functionality and longevity for your devices. Trust Onsemi's expertise and experience to deliver quality products that meet your needs. Choose the 2N6407TG for superior performance and peace of mind.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 75 mA

Lower gate trigger current requirement allows for easier control and operation of the SCR.

Non Repetitive Peak On-state Current: 250 A

High peak on-state current capability makes the SCR suitable for handling high power applications.

Maximum On-state Current: 16 A

The SCR can handle a continuous on-state current of up to 16 A, making it suitable for various medium power applications.

Maximum Leakage Current: 2 mA

Low leakage current ensures efficiency and reliability in the operation of the SCR.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the SCR can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in both high and low temperature environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and corrosion resistance.

Maximum DC Gate Trigger Voltage: 1.5 V

Low gate trigger voltage ensures efficient control and triggering of the SCR.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage capability makes the SCR suitable for a wide range of applications.

Maximum Holding Current: 80 mA

High holding current ensures stable operation and prevents unintentional turn-off of the SCR.

Nominal Circuit Commutated Turn-off Time: 35 us

Fast turn-off time enhances the efficiency and performance of the SCR in switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6407TG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

35 us

Maximum DC Gate Trigger Current:

75 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

80 mA

JESD-609 Code:

e3

Maximum Leakage Current:

2 mA

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Trigger Device Type:

SCR

Trade Compliance

2N6407TG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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