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2N6400

Onsemi

2N6400 by Onsemi

2N6400 by Onsemi is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 30mA, Non Repetitive Peak On-state Current of 160A, and Max RMS On-state Current of 16A. It is used in applications requiring high current switching such as power supplies and motor control due to its SCR configuration.

Median Price

$0.436

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 204 parts In-Stock

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-

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$0.436

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$0.362

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$0.323

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$0.436

$0.362

$0.323

Distributors (In-Stock)

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Digiode

USA . 234 parts In-Stock

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$0.339

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TEDSS.com

USA . 2,852 parts In-Stock

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$0.500

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$0.350

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DF Sales Co.

USA . 430 parts In-Stock

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$1.000

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DF Sales Co.

USA . 430 parts In-Stock

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Bristol Electronics

USA . 100 parts In-Stock

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$2.400

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$1.488

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$1.488

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American Microsemiconductor Inc.

USA . 18 parts In-Stock

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$5.330

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Vyrian

USA . 7,826 parts In-Stock

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Tech-Mark Corp

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R&J Components

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Mil-Aero Solutions, Inc.

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Electronics Depot

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

USA . 100 parts In-Stock

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Electronic Expediters

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Sogenti Electronics

Canada . 42 parts In-Stock

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Elcom Components

USA . 30 parts In-Stock

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North Shore Components

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A2Z Electronics, Inc.

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Fibra_Brandt Electronic GMBH

Germany . 20 parts In-Stock

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Sinequanon

UK . 8 parts In-Stock

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Huijzer Components

Netherlands . 2 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Speed Components Ltd

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Distributors (Availability)

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Native Components

USA . 507 parts In-Stock

1+ parts

$0.166

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$0.159

507

$0.166

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$0.159

Northwest PG Solutions

USA . 55 parts In-Stock

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$0.183

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$0.161

55

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$0.161

Ampacity Inc.

Singapore . 204 parts In-Stock

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$0.303

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Corphita

USA . 380 parts In-Stock

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$0.321

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Corohmni

South Africa . 147 parts In-Stock

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$0.357

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Component Stockers USA

USA . 286 parts In-Stock

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$0.360

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$0.340

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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A-Z Elektronik GmbH

Germany . 7,316 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

Mexico . 2,010 parts In-Stock

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Glotronic Ltd.

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TANS Electronics

Latvia . 1,622 parts In-Stock

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Assy Fe

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Kulean Microsystems

USA . 496 parts In-Stock

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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RTC Component Inc.

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Overview

Experience the superior quality and reliability of the 2N6400 by Onsemi, a leading manufacturer in the industry. As a Silicon Controlled Rectifier (SCR), this product offers unmatched performance and efficiency for various applications. From industrial equipment to consumer electronics, the 2N6400 delivers exceptional value with its high on-state current, low leakage current, and precise triggering capabilities. Trust Onsemi for top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the SCR, ensuring reliable performance in various conditions.

Maximum DC Gate Trigger Current: 30 mA

With a high gate trigger current of 30 mA, this SCR can be easily controlled and triggered, making it suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the design and integration process, making this SCR easy to use in different circuit setups.

Non Repetitive Peak On-state Current: 160 A

The high non-repetitive peak on-state current of 160 A allows this SCR to handle high current loads effectively, making it suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact and space-saving design, allowing for easy installation in various electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers easy and secure mounting on PCBs, ensuring reliable connections for the SCR.

Maximum On-state Current: 5 A

With a maximum on-state current of 5 A, this SCR can handle moderate current loads efficiently, making it suitable for a wide range of applications.

Maximum Leakage Current: 2 mA

The low maximum leakage current of 2 mA ensures minimal power loss and efficient operation of the SCR, making it a reliable choice for energy-efficient applications.

Repetitive Peak Reverse Voltage: 50 V

The repetitive peak reverse voltage of 50 V provides protection against reverse voltage spikes, ensuring the longevity and reliability of the SCR in various circuit conditions.

No. of Terminals: 3

The 3 terminals provide easy connectivity and configuration options, allowing for versatile use of this SCR in different circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure and stable mounting options, ensuring reliable performance of the SCR in various applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this SCR can withstand elevated temperatures, making it suitable for industrial and high-temperature environments.

Trigger Device Type: SCR

As an SCR (Silicon Controlled Rectifier), this device provides precise and controlled switching capabilities, making it suitable for applications requiring accurate power control.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures reliable performance even in cold environments, making this SCR suitable for a wide range of temperature conditions.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides corrosion resistance and secure connections, ensuring long-lasting and reliable operation of the SCR.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and offers easy interfacing with other components, making this SCR user-friendly and efficient to use.

Maximum RMS On-state Current: 16 A

With a maximum RMS on-state current of 16 A, this SCR can handle moderate to high current loads continuously, making it suitable for long-duration applications.

Maximum DC Gate Trigger Voltage: 2.5 V

The low maximum DC gate trigger voltage of 2.5 V ensures efficient and reliable triggering of the SCR, making it suitable for low-power control applications.

Case Connection: ANODE

The anode case connection simplifies the circuitry and offers easy connectivity options, making this SCR suitable for various circuit designs and configurations.

Repetitive Peak Off-state Voltage: 50 V

The repetitive peak off-state voltage of 50 V provides protection against voltage surges and spikes, ensuring the longevity and reliability of the SCR in different operating conditions.

Maximum Holding Current: 60 mA

The high maximum holding current of 60 mA ensures stable and secure operation of the SCR in on-state condition, making it suitable for prolonged usage in various applications.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this SCR can withstand high-temperature soldering processes, ensuring reliable and secure connections during installation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N6400 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

2.5 V

Maximum Holding Current:

60 mA

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

2 mA

Non Repetitive Peak On-state Current:

160 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum RMS On-state Current:

16 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N6400 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-087-1596, 5961010871596, 5961-99-735-8939, 5961997358939

NIIN

010871596, 997358939

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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