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2N3561

Texas Instruments

2N3561 by Texas Instruments

2N3561 by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 18A, and Max On-state Current of 1.6A. It operates b/w -60 to 155°C and has a Repetitive Peak Off-state Voltage of 100V. Ideal for applications requiring precise current control like power supplies and motor controls.

Median Price

$15.810

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 85 parts In-Stock

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$15.810

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Vyrian

USA . 8,887 parts In-Stock

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Digiode

USA . 2,849 parts In-Stock

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2,849

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Electronic Expediters

USA . 18 parts In-Stock

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One Stop Electronics

USA . 192 parts In-Stock

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$1.100

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$1.100

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Native Components

USA . 701 parts In-Stock

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$1.714

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$1.714

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Northwest PG Solutions

USA . 1,678 parts In-Stock

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$1.886

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$1.886

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Parana Technologies

USA . 266 parts In-Stock

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$2.739

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$3.222

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266

$2.739

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$3.222

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DigiPath Technology Company

USA . 1,537 parts In-Stock

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$3.016

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$3.016

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ChromeModa Solutions

Germany . 5,400 parts In-Stock

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$3.078

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$2.524

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$3.078

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IDEA Electronic Components Group

UK . 1,062 parts In-Stock

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$3.078

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$2.770

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AZTECH Wire

Italy . 232 parts In-Stock

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$16.851

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Corphita

USA . 4,260 parts In-Stock

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RTC Component Inc.

USA . 2 parts In-Stock

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Overview

Upgrade your electronics with the high-quality 2N3561 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and reliability. The 2N3561 is a Silicon Controlled Rectifier (SCR) ideal for a wide range of applications. With its low leakage current and high on-state current capabilities, this product offers exceptional value and benefits to customers looking for superior quality components. Trust Texas Instruments to deliver innovative solutions for your electronic needs.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient and precise control of the SCR, making it suitable for various applications.

Non Repetitive Peak On-state Current: 18 A

High peak on-state current rating enables the SCR to handle heavy loads and sudden surges.

Maximum On-state Current: 1.6 A

With a high on-state current rating, this SCR can reliably handle continuous current flow in circuits.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss and improved efficiency of the SCR.

Maximum Operating Temperature: 155 °C

Wide operating temperature range allows for the SCR to be used in diverse environmental conditions.

Trigger Device Type: SCR

The use of Silicon Controlled Rectifiers as trigger devices provides fast switching capabilities and high reliability.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures efficient and fast triggering of the SCR, enhancing overall performance.

Repetitive Peak Off-state Voltage: 100 V

High off-state voltage rating makes the SCR suitable for applications requiring isolation and voltage protection.

Maximum Holding Current: 5 mA

A high holding current rating ensures that the SCR remains in the on-state even after the gate trigger signal is removed, enhancing stability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3561 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

18 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3561 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

2940-98-850-7511, 2940988507511, 5961-00-450-5103, 5961004505103, 5961-00-938-7625, 5961009387625

NIIN

988507511, 004505103, 009387625

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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