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2N3559

Texas Instruments

2N3559 by Texas Instruments

2N3559 by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 1.6A, non-repetitive peak on-state current of 18A, and max DC gate trigger voltage of 0.8V. It is used in applications requiring SCR technology such as power control circuits due to its high reliability and low leakage current.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 5,617 parts In-Stock

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Digiode

USA . 1,359 parts In-Stock

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Electronic Expediters

USA . 343 parts In-Stock

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ECAB

Sweden . 7 parts In-Stock

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One Stop Electronics

USA . 1,535 parts In-Stock

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$0.100

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Native Components

USA . 564 parts In-Stock

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$1.920

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Northwest PG Solutions

USA . 1,882 parts In-Stock

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Parana Technologies

USA . 1,692 parts In-Stock

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$4.155

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DigiPath Technology Company

USA . 1,100 parts In-Stock

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$4.015

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ChromeModa Solutions

Germany . 6,096 parts In-Stock

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$4.097

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$3.360

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IDEA Electronic Components Group

UK . 407 parts In-Stock

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AZTECH Wire

Italy . 649 parts In-Stock

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Corphita

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Overview

Unleash the power of the 2N3559 by Texas Instruments, a top-tier Silicon Controlled Rectifier that sets the standard for quality and reliability in the industry. With a reputation for excellence, Texas Instruments delivers cutting-edge technology that ensures superior performance and durability. From industrial automation to power control applications, this SCR stands out as a versatile and efficient solution that promises unmatched value and benefits for customers. Upgrade your system with the 2N3559 and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient and precise control of the SCR, making it reliable and responsive.

Non Repetitive Peak On-state Current: 18 A

High peak on-state current capability ensures that the SCR can handle sudden surges in current without malfunctioning, making it suitable for high-power applications.

Maximum On-state Current: 1.6 A

With a maximum on-state current of 1.6 A, this SCR is ideal for medium power applications where controlled current flow is required.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes power loss and ensures that the SCR remains efficient during standby or off-state operation.

Maximum Operating Temperature: 155 °C

High operating temperature tolerance allows the SCR to operate reliably in a wide range of environments, making it versatile and durable.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device provides precise control over current flow in high-power circuits, making it suitable for a variety of applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage requirement ensures that the SCR can be easily controlled with minimal power input, enhancing its efficiency.

Repetitive Peak Off-state Voltage: 30 V

With a high repetitive peak off-state voltage, this SCR is capable of handling voltage spikes and transients without breakdown, ensuring reliable long-term operation.

Maximum Holding Current: 5 mA

Able to maintain a steady holding current of up to 5 mA, this SCR can remain in the on-state without needing continuous input, making it energy-efficient.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3559 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

18 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3559 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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