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BTW69600

STMicroelectronics

BTW69600 by STMicroelectronics

BTW69600 by STMicroelectronics is a single silicon controlled rectifier (SCR) with a max on-state current of 25A and a repetitive peak reverse voltage of 600V. It is commonly used in applications requiring high power switching, such as motor control and lighting systems.

Median Price

$30.040

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 28 parts In-Stock

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$30.040

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28

$30.040

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Digiode

USA . 3,969 parts In-Stock

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3,969

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Anansix

USA . 1,557 parts In-Stock

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1,557

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Nova Conductors

Japan . 900 parts In-Stock

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900

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VNN

France . 672 parts In-Stock

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672

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Vyrian

USA . 378 parts In-Stock

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378

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ECAB

Sweden . 48 parts In-Stock

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48

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Distributors (Availability)

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Ampacity Inc.

Singapore . 315 parts In-Stock

1+ parts

$0.100

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-

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315

$0.100

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IDEA Electronic Components Group

UK . 1,830 parts In-Stock

1+ parts

$3.316

100+ parts

-

1k+ parts

$2.984

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1,830

$3.316

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$2.984

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MKK Technologies

India . 788 parts In-Stock

1+ parts

$6.235

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788

$6.235

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DigiPath Technology Company

USA . 788 parts In-Stock

1+ parts

$6.235

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788

$6.235

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AZTECH Wire

Italy . 520 parts In-Stock

1+ parts

$16.769

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520

$16.769

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Kepictronics

USA . 8,800 parts In-Stock

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8,800

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A-Z Elektronik GmbH

Germany . 6,869 parts In-Stock

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6,869

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Continental Prestige Electronics

USA . 6,199 parts In-Stock

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6,199

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Alle Elektronik GmbH

Germany . 4,579 parts In-Stock

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4,579

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Corphita

USA . 4,028 parts In-Stock

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4,028

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Parana Technologies

USA . 2,233 parts In-Stock

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$3.964

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2,233

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$3.964

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Argo Parts USA

USA . 1,757 parts In-Stock

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1,757

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Perfect Parts

USA . 101 parts In-Stock

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101

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Assy Fe

Spain . 60 parts In-Stock

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60

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Overview

Discover the BTW69600 by STMicroelectronics, a high-quality Silicon Controlled Rectifier (SCR) that offers exceptional value and performance. Manufactured by the renowned STMicroelectronics, this product is designed to deliver reliable and efficient power control solutions for a wide range of applications. With its impressive features and advantages, such as a maximum on-state current of 25A, low leakage current, and a repetitive peak reverse voltage of 600V, the BTW69600 is perfect for various industrial and consumer electronic devices. Say goodbye to power fluctuations and hello to seamless control with the BTW69600 SCR from STMicroelectronics.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the product, making it suitable for various applications.

Maximum DC Gate Trigger Current

80 mA - With a high trigger current, this product can reliably respond to control signals, ensuring efficient operation.

Configuration

SINGLE - The single configuration simplifies the wiring and installation process, making it convenient for both professionals and DIY enthusiasts.

Non Repetitive Peak On-state Current

525 A - This high current capability allows the product to handle heavy loads, making it suitable for demanding applications.

Package Shape

RECTANGULAR - The rectangular shape allows for easy integration and mounting, enhancing the product's versatility in different setups.

Terminal Form

THROUGH-HOLE - The through-hole terminals provide secure connections, minimizing the risk of accidental disconnections and ensuring stable performance.

No. of Elements

1 - The single element design simplifies the circuit design and reduces complexity, making it suitable for straightforward applications.

Maximum On-state Current

25 A - With a high maximum current capacity, this product can handle significant power requirements, ensuring reliable performance.

Maximum Leakage Current

6 mA - The low leakage current reduces power wastage and improves energy efficiency, making it an economical choice.

Repetitive Peak Reverse Voltage

600 V - This high reverse voltage rating ensures reliable operation and protection against voltage surges, enhancing the product's durability.

Maximum Repetitive Peak Off-state Leakage Current

20 uA - The low off-state leakage current helps conserve energy and prevents unnecessary power dissipation.

No. of Terminals

3 - The three-terminal design enables easy connectivity and compatibility with various systems, offering flexibility in installation.

Package Style (Meter)

FLANGE MOUNT - The flange mount package style allows for secure mounting, ensuring stability in harsh environments or vibration-prone applications.

Maximum Operating Temperature

125 °C - The high operating temperature rating enables this product to withstand elevated temperatures, expanding its range of applications.

Trigger Device Type

SCR - Being a Silicon Controlled Rectifier, this product offers precise control over the current flow, making it suitable for voltage regulation and power control applications.

Minimum Operating Temperature

40 °C - With a low minimum operating temperature, this product can function reliably in colder environments, increasing its versatility.

Terminal Finish

MATTE TIN - The matte tin terminal finish provides a protective coating and prevents corrosion, enhancing the product's longevity.

Terminal Position

SINGLE - The single terminal position simplifies the wiring process, promoting ease of installation and reducing potential errors.

Maximum RMS On-state Current

50 A - With a high RMS current rating, this product can handle significant current loads with efficiency and reliability.

Maximum DC Gate Trigger Voltage

1.5 V - The low gate trigger voltage requirement allows for easy control and integration with various control systems, making it user-friendly.

Case Connection

ISOLATED - The isolated case connection ensures electrical safety and eliminates the risk of unwanted interference, making it suitable for sensitive applications.

Repetitive Peak Off-state Voltage

600 V - This high off-state voltage rating provides robust protection against voltage spikes and transients, enhancing equipment safety and reliability.

Minimum Critical Rate of Rise of Off-state Voltage

500 V/us - The high critical rate of rise enables precise control over voltage regulation and offers protection against rapid voltage changes.

Maximum Holding Current

150 mA - With a high holding current capacity, this product can maintain a steady state of conduction, ensuring stable operation in various load conditions.

Nominal Circuit Commutated Turn-off Time

100 us - The fast turn-off time allows for quick switching and reduces power dissipation, making it suitable for high-frequency applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW69600 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

80 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

150 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

525 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

50 A

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW69600 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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