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BTW68-1000

STMicroelectronics

BTW68-1000 by STMicroelectronics

BTW68-1000 by STMicroelectronics is a robust SCR designed for high-performance applications. It features a max repetitive peak reverse voltage of 1000 V, non-repetitive peak on-state current of 420 A, and operates efficiently b/w -40 °C to 125°C. Ideal for power control in industrial systems, it ensures reliable switching and thermal management.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,518 parts In-Stock

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2,518

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Digiode

USA . 932 parts In-Stock

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932

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Anansix

USA . 807 parts In-Stock

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807

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Tech-Mark Corp

USA . 80 parts In-Stock

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80

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ECAB

Sweden . 76 parts In-Stock

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76

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LittleDiode

UK . 10 parts In-Stock

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10

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LWI Electronics Inc

India . 8 parts In-Stock

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8

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Distributors (Availability)

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Native Components

USA . 496 parts In-Stock

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$1.408

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496

$1.408

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Northwest PG Solutions

USA . 32 parts In-Stock

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$1.549

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32

$1.549

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IDEA Electronic Components Group

UK . 175 parts In-Stock

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$2.794

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$2.515

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175

$2.794

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$2.515

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MKK Technologies

India . 1,155 parts In-Stock

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$5.254

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1,155

$5.254

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DigiPath Technology Company

USA . 1,155 parts In-Stock

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$5.254

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$5.254

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Kepictronics

USA . 6,800 parts In-Stock

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Corphita

USA . 1,580 parts In-Stock

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Parana Technologies

USA . 1,570 parts In-Stock

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$3.341

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1,570

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$3.341

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Overview

Elevate your projects with the BTW68-1000 from STMicroelectronics, a trusted leader in semiconductor technology. This high-performance SCR brings unparalleled reliability and efficiency to your applications, whether in industrial control, power management, or lighting systems. Designed for durability and precision, it handles extreme conditions with ease, ensuring seamless operations. Experience superior quality and innovation that drives your success forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides excellent insulation and protection against environmental factors, ensuring reliability in various operating conditions.

Maximum DC Gate Trigger Current: 50 mA

A relatively high gate trigger current allows for effective control and switching, making the SCR suitable for a variety of applications.

Configuration: SINGLE

Single configuration simplifies design and integration, making it easier for engineers to implement in their circuits.

Non Repetitive Peak On-state Current: 420 A

This high peak current rating indicates strong performance in handling surges, making the SCR ideal for high-load applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, facilitating efficient layout and design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and are user-friendly for prototyping and assembly.

Maximum On-state Current: 16 A

A maximum on-state current rating of 16 A ensures reliable performance in power applications without overheating.

Maximum Leakage Current: 3 mA

Low leakage current minimizes power loss and enhances energy efficiency in circuits where this SCR is implemented.

Repetitive Peak Reverse Voltage: 1000 V

A high reverse voltage rating enables this SCR to function securely in high-voltage applications, contributing to overall system reliability.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

Very low off-state leakage current increases energy efficiency and reduces the risk of unwanted triggering in the circuit.

No. of Terminals: 3

The simplified three-terminal design allows for easier circuit integration and potential cost savings in manufacturing.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances mechanical stability and enables easy heatsinking, improving thermal management.

Maximum Operating Temperature: 125 °C

A high operating temperature rating permits use in challenging environments without compromising performance.

Trigger Device Type: SCR

As a silicon-controlled rectifier, this product is designed for efficient switching, making it ideal for high-power applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures reliable operation in extreme conditions, making it versatile for various applications.

Terminal Finish: TIN LEAD

Tin lead finish enhances solderability, ensuring reliable connections and ease of assembly.

Terminal Position: SINGLE

Single terminal position simplifies PCB design and enhances ease of installation.

Maximum RMS On-state Current: 30 A

High RMS current capability signifies the SCR's strength in managing continuous load currents effectively.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage requirement leads to reduced power consumption in control circuits.

Case Connection: ISOLATED

Isolated case connections prevent unwanted electrical interference, ensuring safer operation.

Repetitive Peak Off-state Voltage: 1000 V

Allows the device to withstand high voltages without failure, enhancing durability and reliability in demanding applications.

Minimum Critical Rate of Rise of Off-state Voltage: 250 V/us

High critical rate of voltage rise facilitates quick turn-off, minimizing power loss during switching operations.

Maximum Holding Current: 75 mA

This high holding current capacity ensures stable operation after triggering, reducing the risk of false turn-off.

Nominal Circuit Commutated Turn-off Time: 100 µs

Fast turn-off time allows efficient control for applications requiring quick response and reliability.

Reference Standard: UL RECOGNIZED

UL recognition indicates compliance with stringent safety standards, ensuring trust and reliability for end users.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW68-1000 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

250 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Maximum Holding Current:

75 mA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

420 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

16 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

30 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

1000 V

Repetitive Peak Reverse Voltage:

1000 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW68-1000 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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