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BTW66-800

STMicroelectronics

BTW66-800 by STMicroelectronics

BTW66-800 by STMicroelectronics is a robust SCR with a max repetitive peak reverse voltage of 800 V and non-repetitive peak on-state current of 200 A. It operates efficiently in harsh environments, with a temp range of -40 °C to 125°C. Ideal for power control applications, it features a metal package and solder lug terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,565 parts In-Stock

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Digiode

USA . 3,166 parts In-Stock

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Anansix

USA . 1,613 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 179 parts In-Stock

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$0.109

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$0.105

179

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Northwest PG Solutions

USA . 1,707 parts In-Stock

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$0.120

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$0.106

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IDEA Electronic Components Group

UK . 1,780 parts In-Stock

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$3.739

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$3.365

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$3.739

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MKK Technologies

India . 2,184 parts In-Stock

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$7.031

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DigiPath Technology Company

USA . 2,184 parts In-Stock

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$7.031

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Corphita

USA . 3,728 parts In-Stock

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Parana Technologies

USA . 2,173 parts In-Stock

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$4.470

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$4.470

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Overview

Unlock unparalleled performance with the BTW66-800 from STMicroelectronics, a powerhouse in Silicon Controlled Rectifiers. Crafted with precision and built to last, this SCR excels in high-voltage applications, ensuring reliability and efficiency for your projects. With STMicroelectronics' renowned quality backing it, enjoy the peace of mind that comes with industry-leading support and innovation. Transform your designs today and experience unmatched value and durability!

Feature Benefit Bullets

Package Body Material: METAL

The metal body provides excellent thermal conductivity, ensuring efficient heat dissipation and enhancing the overall performance of the SCR.

Maximum DC Gate Trigger Current: 50 mA

A relatively low gate trigger current makes this SCR compatible with various control circuits, reducing power consumption.

Configuration: SINGLE

The single configuration allows for simple integration into circuit designs, making it versatile for multiple applications.

Non Repetitive Peak On-state Current: 200 A

This high peak current capacity enables the SCR to handle significant temporary overloads, suitable for demanding applications.

Package Shape: ROUND

The round package shape allows for efficient space utilization on circuit boards, making it suitable for compact designs.

Terminal Form: SOLDER LUG

Solder lug terminals ensure a secure and robust connection, enhancing the reliability of the device in various applications.

Maximum On-state Current: 20 A

With a maximum on-state current of 20 A, this SCR can manage substantial loads, ideal for industrial applications.

Quick Connects Description: A-G-K

This specification allows for quick and efficient connections, streamlining installation processes and reducing assembly time.

Maximum Leakage Current: 3 mA

A low leakage current improves energy efficiency and performance stability, essential for modern power electronics.

Repetitive Peak Reverse Voltage: 800 V

This high reverse voltage capability ensures the SCR can operate safely in high-voltage environments, enhancing system reliability.

Maximum Repetitive Peak Off-state Leakage Current: 20 uA

Minimal off-state leakage current supports energy efficiency and reduces heat generation during idle states.

No. of Terminals: 3

Three terminals provide the functionality needed for standard SCR applications, making it easy to integrate into existing designs.

Package Style (Meter): FLANGE MOUNT

The flange-mount style guarantees secure installation and maintains effective thermal management in various setups.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR is suitable for high-temperature applications, expanding its usability range.

Trigger Device Type: SCR

As a Silicon Controlled Rectifier, it offers superior control over power management in circuits, making it ideal for switching applications.

Minimum Operating Temperature: -40 °C

A wide temperature range ensures the SCR can perform reliably in extreme environmental conditions, increasing its versatility.

Terminal Position: UPPER

Upper terminal positioning facilitates easier access for wiring, improving installation efficiency in embedded systems.

Maximum RMS On-state Current: 30 A

This high RMS on-state current rating means the SCR can handle substantial continuous loads, vital for industrial applications.

Maximum DC Gate Trigger Voltage: 1.5 V

A low gate trigger voltage minimizes the power required to operate the SCR, making it energy-efficient in circuit designs.

Case Connection: ISOLATED

Isolated case connections enhance safety and prevent short circuits, improving reliability in sensitive applications.

Repetitive Peak Off-state Voltage: 800 V

An impressive off-state voltage capability allows the SCR to withstand demanding electrical environments, ensuring durability.

Minimum Critical Rate of Rise of Off-state Voltage: 500 V/us

A high rate of voltage rise enhances the SCR's response time, making it suitable for fast-switching applications.

Maximum Holding Current: 75 mA

This feature ensures that the SCR will not unintentionally turn off in minor fluctuations, maintaining stable operation.

Nominal Circuit Commutated Turn-off Time: 100 us

A fast turn-off time enables quick recovery and is ideal for applications involving rapid switching cycles.

Reference Standard: UL RECOGNIZED

Being UL recognized assures users of the product's safety and compliance with industry standards, promoting trust and reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BTW66-800 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

500 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

1.5 V

Quick Connects Description:

A-G-K

Screw Terminals Description:

0

Maximum Holding Current:

75 mA

JESD-30 Code:

O-MUFM-D3

Maximum Leakage Current:

3 mA

Non Repetitive Peak On-state Current:

200 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

20 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

30 A

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Off-state Leakage Current:

20 uA

Repetitive Peak Off-state Voltage:

800 V

Repetitive Peak Reverse Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

BTW66-800 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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