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TI145A0

Texas Instruments

TI145A0 by Texas Instruments

TI145A0 by Texas Instruments is a single SCR with max. DC gate trigger current of 25mA, non-repetitive peak on-state current of 30A, and max. leakage current of 0.25mA. It is used in applications requiring a round package shape, such as power control circuits for industrial equipment or electronic motor drives.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,373 parts In-Stock

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7,373

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Digiode

USA . 4,999 parts In-Stock

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4,999

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Electronic Expediters

USA . 80 parts In-Stock

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80

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Distributors (Availability)

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Parana Technologies

USA . 1,201 parts In-Stock

1+ parts

$3.064

100+ parts

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$3.580

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1,201

$3.064

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$3.580

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DigiPath Technology Company

USA . 538 parts In-Stock

1+ parts

$3.374

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538

$3.374

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ChromeModa Solutions

Germany . 3,986 parts In-Stock

1+ parts

$3.443

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$2.823

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3,986

$3.443

$2.823

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IDEA Electronic Components Group

UK . 2,271 parts In-Stock

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$3.443

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$3.099

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2,271

$3.443

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$3.099

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AZTECH Wire

Italy . 203 parts In-Stock

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$15.788

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203

$15.788

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One Stop Electronics

USA . 1,319 parts In-Stock

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$23.100

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$23.100

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Corphita

USA . 3,054 parts In-Stock

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3,054

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Overview

Unleash the power of Texas Instruments with the TI145A0 Silicon Controlled Rectifier (SCR). Designed with precision engineering and top-quality materials, this SCR offers unmatched reliability and performance. Whether you're in the industrial, consumer electronics, or automotive industry, the TI145A0 is your go-to solution for efficient power control. Trust in Texas Instruments to deliver cutting-edge technology that exceeds expectations. Experience the value and benefits of the TI145A0 today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides strong mechanical protection and high thermal conductivity, ensuring reliable performance in harsh environments.

Maximum DC Gate Trigger Current: 25 mA

Low gate trigger current allows for precise control of the SCR and efficient operation.

Configuration: SINGLE

Single configuration simplifies the design and integration of the SCR into the circuit.

Non Repetitive Peak On-state Current: 30 A

High peak on-state current capability allows the SCR to handle high power loads without failure.

Package Shape: ROUND

Round package shape facilitates easy installation and mounting in various applications.

Terminal Form: WIRE

Wire terminals provide secure connections and ease of soldering for quick assembly.

Maximum On-state Current: 1.6 A

The maximum on-state current rating ensures reliable and stable operation under normal operating conditions.

Maximum Leakage Current: 0.25 mA

Low leakage current minimizes power loss and improves energy efficiency.

Repetitive Peak Reverse Voltage: 50 V

High repetitive peak reverse voltage rating offers protection against voltage spikes and reverse polarity.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for compact and space-saving designs in electronic devices.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures the SCR can withstand elevated temperatures without performance degradation.

Trigger Device Type: SCR

SCR (Silicon Controlled Rectifier) is a reliable and robust device suitable for various switching applications.

Minimum Operating Temperature: -60 °C

Low minimum operating temperature allows the SCR to function in cold environments without issues.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and connection in circuit layouts.

Maximum RMS On-state Current: 1.6 A

High maximum RMS on-state current rating ensures stability and efficiency under continuous load conditions.

Maximum DC Gate Trigger Voltage: 3.5 V

Low gate trigger voltage allows for faster turn-on and precise control of the SCR.

Case Connection: ANODE

Anode case connection simplifies the circuit design and improves safety in high voltage applications.

Repetitive Peak Off-state Voltage: 50 V

High repetitive peak off-state voltage rating provides robust protection against voltage transients and overloads.

Maximum Holding Current: 25 mA

High holding current ensures the SCR remains in the on-state even after the gate signal is removed, enhancing reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TI145A0 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Case Connection:

Configuration:

Maximum DC Gate Trigger Current:

25 mA

Maximum DC Gate Trigger Voltage:

3.5 V

Maximum Holding Current:

25 mA

JEDEC-95 Code:

TO-5

JESD-30 Code:

O-MBCY-W3

Maximum Leakage Current:

.25 mA

Non Repetitive Peak On-state Current:

30 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-60 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.6 A

Repetitive Peak Off-state Voltage:

50 V

Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TI145A0 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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