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2N3557

Texas Instruments

2N3557 by Texas Instruments

2N3557 by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 1.6A, non-repetitive peak on-state current of 18A, and max DC gate trigger voltage of 0.7V. It operates b/w -60 to 155°C and is ideal for applications requiring precise gate triggering in electrical circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,763 parts In-Stock

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Digiode

USA . 1,238 parts In-Stock

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PUI

USA . 63 parts In-Stock

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Parana Technologies

USA . 1,097 parts In-Stock

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$2.222

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$2.727

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DigiPath Technology Company

USA . 2,341 parts In-Stock

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$2.447

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ChromeModa Solutions

Germany . 6,019 parts In-Stock

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$2.497

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$2.048

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IDEA Electronic Components Group

UK . 1,943 parts In-Stock

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$2.247

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Semicontronic

India . 1,521 parts In-Stock

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$6.100

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$5.948

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$5.917

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AZTECH Wire

Italy . 696 parts In-Stock

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$17.648

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Ampacity Inc.

Singapore . 899 parts In-Stock

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One Stop Electronics

USA . 278 parts In-Stock

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$29.100

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Northwest PG Solutions

USA . 2,020 parts In-Stock

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Corphita

USA . 1,815 parts In-Stock

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Native Components

USA . 450 parts In-Stock

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Corohmni

South Africa . 253 parts In-Stock

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Overview

Unleash the power of the 2N3557 by Texas Instruments, a top-tier silicon controlled rectifier that embodies innovation and quality. As a leading manufacturer in the industry, Texas Instruments guarantees unmatched reliability and performance. The 2N3557 is perfect for a wide range of applications in industries such as telecommunications, automotive, and industrial controls. With its cutting-edge technology and durable design, this SCR delivers exceptional value, efficiency, and versatility to customers looking for superior electronic components. Elevate your projects with the 2N3557 and experience the difference today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for precise control and efficient operation of the SCR.

Non Repetitive Peak On-state Current: 18 A

High peak on-state current capability ensures the SCR can handle large transient loads without issue.

Maximum On-state Current: 1.6 A

Good on-state current rating suitable for a variety of applications requiring moderate current handling.

Maximum Leakage Current: 0.02 mA

Low leakage current ensures minimal power loss and improved efficiency in standby mode.

Maximum Operating Temperature: 155 °C

High operating temperature range makes the SCR suitable for use in environments with elevated temperatures.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers reliable and robust switching capabilities for various circuits.

Minimum Operating Temperature: -60 °C

Wide temperature range allows for operation in cold environments without compromising performance.

Maximum DC Gate Trigger Voltage: 0.7 V

Low gate trigger voltage requirement ensures compatibility with a wide range of control circuits.

Repetitive Peak Off-state Voltage: 100 V

Off-state voltage rating suitable for medium power applications requiring voltage blocking capability.

Maximum Holding Current: 3 mA

High holding current ensures stable operation and prevents false triggering of the SCR.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3557 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.7 V

Maximum Holding Current:

3 mA

Maximum Leakage Current:

.02 mA

Non Repetitive Peak On-state Current:

18 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

100 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3557 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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