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2N3555

Texas Instruments

2N3555 by Texas Instruments

2N3555 by Texas Instruments is a Silicon Controlled Rectifier with max on-state current of 1.6A, non-repetitive peak on-state current of 18A, and max DC gate trigger voltage of 0.7V. It is used in applications requiring precise control over electrical currents and voltages at temperatures ranging from -60 to 155°C.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 8,165 parts In-Stock

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Digiode

USA . 2,945 parts In-Stock

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ECAB

Sweden . 5 parts In-Stock

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Tech-Mark Corp

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Native Components

USA . 302 parts In-Stock

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$1.451

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Northwest PG Solutions

USA . 1,352 parts In-Stock

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$1.596

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Parana Technologies

USA . 1,274 parts In-Stock

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$3.444

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$3.970

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DigiPath Technology Company

USA . 2,153 parts In-Stock

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$3.793

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$3.489

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IDEA Electronic Components Group

UK . 933 parts In-Stock

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$3.870

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ChromeModa Solutions

Germany . 885 parts In-Stock

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$3.870

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AZTECH Wire

Italy . 294 parts In-Stock

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One Stop Electronics

USA . 327 parts In-Stock

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Corphita

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Overview

Unlock the power of innovation with the Texas Instruments 2N3555 Silicon Controlled Rectifier. Known for their superior quality and reliability, Texas Instruments offers a trusted solution for your electronic needs. Whether you are looking to control power in industrial applications or regulate voltage in consumer electronics, the 2N3555 delivers unmatched performance. With its low leakage current and high on-state current capabilities, this SCR provides exceptional value and efficiency. Trust Texas Instruments to provide the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 0.02 mA

Low gate trigger current ensures efficient control and operation of the SCR, leading to increased reliability and longevity.

Non Repetitive Peak On-state Current: 18 A

High peak on-state current capacity allows the SCR to handle heavy loads and sudden surges, making it suitable for demanding applications.

Maximum On-state Current: 1.6 A

With a maximum on-state current of 1.6 A, this SCR is capable of handling moderate to high power loads efficiently, making it versatile for various applications.

Maximum Leakage Current: 0.02 mA

Low leakage current ensures minimal power loss and improved energy efficiency during operation.

Maximum Operating Temperature: 155 °C

High operating temperature range of up to 155°C ensures reliable performance even in extreme environmental conditions.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device offers precise control over switching and conduction, making it a preferred choice for power electronics applications.

Minimum Operating Temperature: -60 °C

Wide range of operating temperature from -60°C to 155°C allows the SCR to function effectively in both low and high-temperature environments.

Maximum DC Gate Trigger Voltage: 0.7 V

Low gate trigger voltage of 0.7 V ensures efficient triggering and control of the SCR, enhancing its overall performance.

Repetitive Peak Off-state Voltage: 30 V

With a peak off-state voltage of 30 V, this SCR can withstand voltage fluctuations and transients, ensuring stable operation in varying electrical conditions.

Maximum Holding Current: 3 mA

Holding current of 3 mA ensures the SCR remains in the on-state even after the gate signal is removed, contributing to stable and continuous conduction.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N3555 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Maximum DC Gate Trigger Current:

.02 mA

Maximum DC Gate Trigger Voltage:

.7 V

Maximum Holding Current:

3 mA

Maximum Leakage Current:

.02 mA

Non Repetitive Peak On-state Current:

18 A

Maximum On-state Current:

1.6 A

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

30 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N3555 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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