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2N686A

Texas Instruments

2N686A by Texas Instruments

2N686A by Texas Instruments is a Silicon Controlled Rectifier with max DC Gate Trigger Current of 40mA, Non Repetitive Peak On-state Current of 250A, and Max On-state Current of 18A. It operates b/w -60°C to 125°C and is ideal for applications requiring high current switching capabilities.

Median Price

$26.000

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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TEDSS.com

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Bristol Electronics

USA . 6 parts In-Stock

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Digiode

USA . 4,491 parts In-Stock

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Vyrian

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M&R Communications

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DigiKey Marketplace

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Dan-Mar Components

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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MISTER SPROCKETS

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Parana Technologies

USA . 666 parts In-Stock

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$2.852

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$3.342

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DigiPath Technology Company

USA . 1,241 parts In-Stock

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$3.141

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$2.890

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ChromeModa Solutions

Germany . 1,439 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 513 parts In-Stock

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Microchip USA

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One Stop Electronics

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Corphita

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Northwest PG Solutions

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Native Components

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Component Stockers USA

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Overview

Looking for a reliable Silicon Controlled Rectifier (SCR) that delivers top-notch performance? Look no further than the 2N686A by Texas Instruments. With a maximum DC Gate Trigger Current of 40 mA and a Non Repetitive Peak On-state Current of 250 A, this SCR is sure to meet all your needs. Whether you're in the industrial, automotive, or consumer electronics industry, the 2N686A offers exceptional quality and reliability. Experience the value and benefits of Texas Instruments' superior manufacturing with the 2N686A. Upgrade your projects today!

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 40 mA

The low gate trigger current allows for precise control and efficient triggering of the SCR, making it a reliable choice for your application.

Non Repetitive Peak On-state Current: 250 A

With a high non-repetitive peak on-state current rating, this SCR can handle sudden surges in current without any issues, ensuring stable operation in demanding conditions.

Maximum On-state Current: 18 A

The high on-state current rating enables this SCR to effectively handle high current loads, making it suitable for a wide range of applications.

Maximum Leakage Current: 1 mA

The low leakage current helps in minimizing power losses and improving overall efficiency of the system where this SCR is used.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this SCR can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Minimum Operating Temperature: -60 °C

The wide operating temperature range allows this SCR to function in extreme cold conditions, making it a versatile choice for various applications.

Maximum DC Gate Trigger Voltage: 3 V

The low gate trigger voltage required for activation enhances the efficiency and precision of the control system using this SCR.

Repetitive Peak Off-state Voltage: 250 V

The high repetitive peak off-state voltage rating ensures that this SCR can handle voltage fluctuations effectively, making it suitable for applications where voltage spikes are common.

Minimum Critical Rate of Rise of Off-state Voltage: 200 V/us

The high critical rate of rise of off-state voltage makes this SCR suitable for fast-switching applications where rapid voltage changes occur frequently.

Maximum Holding Current: 50 mA

The high holding current capability ensures that the SCR remains in the on-state even after the gate trigger signal is removed, providing stability in the system operation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N686A attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

200 V/us

Maximum DC Gate Trigger Current:

40 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

250 A

Maximum On-state Current:

18 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

250 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N686A Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-921-3291, 5961009213291

NIIN

009213291

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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