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2N685

Texas Instruments

2N685 by Texas Instruments

2N685 by Texas Instruments is a Silicon Controlled Rectifier with 30mA DC Gate Trigger Current, 150A Non Repetitive Peak On-state Current, and 25A Max On-state Current. It operates b/w -60°C to 125°C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring high current switching capabilities in various electronic circuits.

Median Price

$7.700

Lifecycle Status

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30

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1k+

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Newark

USA . 51 parts In-Stock

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Digiode

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TEDSS.com

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American Microsemiconductor Inc.

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ECAB

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Resion

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Holdelec - ElecDif-Pro

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Donberg Electronics Ltd

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Lakeview Electronics

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Sunrise Surplus Inc.

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Native Components

USA . 1,755 parts In-Stock

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IDEA Electronic Components Group

UK . 927 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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Advanced Electronics

New Zealand . 151 parts In-Stock

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ChromeModa Solutions

Germany . 1,149 parts In-Stock

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DigiPath Technology Company

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Continental Prestige Electronics

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Corphita

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Parana Technologies

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Northwest PG Solutions

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RTC Component Inc.

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Overview

Unlock the power of reliable performance with the Texas Instruments 2N685 Silicon Controlled Rectifier (SCR). Manufactured by a trusted industry leader, this SCR offers exceptional quality and durability for a wide range of applications. With a maximum DC gate trigger current of 30mA and non-repetitive peak on-state current of 150A, the 2N685 delivers unparalleled efficiency and precision. Whether you're in need of a dependable solution for industrial machinery or consumer electronics, this SCR provides unmatched value, benefits, and advantages to meet your needs. Trust in Texas Instruments for superior performance every time.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

The low gate trigger current ensures efficient and reliable switching of the SCR.

Non Repetitive Peak On-state Current: 150 A

Capable of handling high peak currents, making it suitable for demanding applications.

Maximum On-state Current: 25 A

Can handle moderate continuous currents, suitable for various load requirements.

Maximum Leakage Current: 6 mA

Low leakage current helps in reducing power losses and improving overall efficiency.

Maximum Operating Temperature: 125 °C

Can operate at high temperatures without compromising performance or reliability.

Trigger Device Type: SCR

Using a Silicon Controlled Rectifier as the trigger device provides precise control over switching.

Minimum Operating Temperature: -60 °C

Capable of operating in extremely low temperatures, suitable for diverse environmental conditions.

Maximum DC Gate Trigger Voltage: 3 V

Low gate trigger voltage ensures efficient triggering while minimizing power consumption.

Repetitive Peak Off-state Voltage: 200 V

Sufficient voltage handling capabilities for many common applications.

Minimum Critical Rate of Rise of Off-state Voltage: 30 V/us

Can withstand fast voltage rise rates, ensuring reliable operation in dynamic systems.

Maximum Holding Current: 50 mA

Capable of maintaining conduction without requiring excessive gate drive current, enhancing efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N685 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

6 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N685 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-787-2902, 5961007872902, 5961-00-824-2522, 5961008242522, 5961-01-293-6489, 5961012936489, 5961-99-118-3884, 5961991183884

NIIN

007872902, 008242522, 012936489, 991183884

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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