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2N688

Texas Instruments

2N688 by Texas Instruments

2N688 by Texas Instruments is a Silicon Controlled Rectifier with 30mA DC Gate Trigger Current, 150A Non Repetitive Peak On-state Current, and 25A Max On-state Current. It operates b/w -60°C to 125°C and has a max DC Gate Trigger Voltage of 3V. Ideal for applications requiring high current handling capabilities like power control systems.

Median Price

$16.880

Lifecycle Status

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24

In-Stock Inventory

1k+

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Bristol Electronics

USA . 3 parts In-Stock

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$8.250

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American Microsemiconductor Inc.

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$16.880

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Forefront Electronics and Design

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Vyrian

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Digiode

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Elite Semiconductor

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Anansix

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Resion

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PUI

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DigiKey Marketplace

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Area51 Electronics

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Manoshevitz Elec. Sales

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Halfin

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ECAB

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Elcom Components

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Electronic Expediters

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Electronics Depot

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Mil-Aero Solutions, Inc.

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Prism Electronics

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MISTER SPROCKETS

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Distributors (Availability)

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Native Components

USA . 937 parts In-Stock

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$0.556

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IDEA Electronic Components Group

UK . 3,183 parts In-Stock

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$2.041

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$1.837

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ChromeModa Solutions

Germany . 6,527 parts In-Stock

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$2.378

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$1.950

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DigiPath Technology Company

USA . 3,232 parts In-Stock

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MKK Technologies

India . 1,184 parts In-Stock

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Andel Nordic

Denmark . 1,362 parts In-Stock

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$10.391

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$9.975

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AZTECH Wire

Italy . 794 parts In-Stock

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One Stop Electronics

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Northwest PG Solutions

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Corphita

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Glotronic Ltd.

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Parana Technologies

USA . 2,348 parts In-Stock

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$2.441

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Assy Fe

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Component Stockers USA

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RTC Component Inc.

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Perfect Parts

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Overview

Unlock the power of the 2N688 by Texas Instruments, a high-quality Silicon Controlled Rectifier that offers reliability and performance. Manufactured by Texas Instruments, a trusted name in the industry, this SCR is ideal for a wide range of applications. From industrial equipment to consumer electronics, the 2N688 provides exceptional value with its impressive features and benefits. Trust Texas Instruments to deliver top-notch products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 30 mA

Having a high gate trigger current allows for precise control over the SCR, making it reliable and responsive in various applications.

Non Repetitive Peak On-state Current: 150 A

The high on-state current capability ensures that the SCR can handle sudden surges in current without malfunctioning, making it suitable for high-power applications.

Maximum On-state Current: 25 A

With a high on-state current rating, this SCR can handle a significant amount of continuous current flow without overheating or failing, making it dependable for long-term usage.

Maximum Leakage Current: 4 mA

Low leakage current means that the SCR can effectively control the flow of current when in the off-state, leading to improved energy efficiency and reduced power wastage.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures the SCR can perform reliably in a variety of environmental conditions, making it versatile and suitable for different applications.

Trigger Device Type: SCR

Being an SCR (Silicon Controlled Rectifier), this device offers precise control over current flow and voltage regulation, making it a preferred choice for many electronic applications.

Repetitive Peak Off-state Voltage: 400 V

The high off-state voltage rating allows the SCR to block the passage of current effectively when off, ensuring safety and preventing electrical shorts in the system.

Maximum Holding Current: 50 mA

The high holding current ensures that the SCR remains in the on-state even after the gate signal is removed, providing stability and preventing unintended switching off in critical applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N688 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Texas Instruments

Specs

Minimum Critical Rate of Rise of Off-state Voltage:

30 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

3 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

4 mA

Non Repetitive Peak On-state Current:

150 A

Maximum On-state Current:

25 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-60 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

2N688 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-126-7479, 5961001267479, 5961-14-232-8652, 5961142328652, 5961-15-071-4278, 5961150714278

NIIN

001267479, 142328652, 150714278

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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